為了提升積體電路的效能，進年來基本元件一直朝著微縮的方向前進，但是進步到幾十奈米的線寬的同時，許多製程技術也漸漸浮現問題。在這無法再繼續縮小的情況下，尋找新的材料以解決目前的困境就成了另一個解決方法，而近年來很熱門的單層石墨（graphene）就是其中最具潛力的材料。單層石墨是厚度只有一個原子層的二維系統，也是目前已知材料中唯一以二維方式穩定存在的材料，其特殊的能帶也讓科學界掀一起股研究單層石墨的熱潮。

最早的單層石墨製備方式為機械剝離法 (mechanical exfoliation)，雖然此法製備出來的石墨表面很少有雜質，十分利於後續的製程步驟，但是這種方法耗時且人力須求較高，因此利用化學氣相沈積法 (Chemical vapor deposition, CVD)來製備大面積單層石墨的方法也逐漸興起，在論文中我們利用鎳薄膜 (Ni thin film)及鎳錠（Ni pillar）做為催化劑來成長單層石墨，接續著之前成長的經驗，我們已經可以成長大量高品質的單層與雙層石墨。

為了更加了解以鎳為催化劑成長的石墨特性，我們利用拉曼光譜分析來了解鎳對石墨可能造成的影響，不僅如此，為了確定石墨與基板間交互作用的情況，我們也在轉移基板後對同一點的石墨進行拉曼光譜的檢測，同時我們也利用電子背向繞射系統來分析鎳的晶向，讓我們能更深入的探討石墨的成長機製與成長時的情況。

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