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研究生： 林呈泓
Lin, Cheng-Hung
論文名稱： 以原子層化學氣相沉積製備二氧化鉿與鑲嵌鈦金屬夾層於電阻轉換特性之研究
Study on the resistive switching characteristics of atomic layer deposition HfO2 film with Ti interlayers
指導教授： 吳泰伯
Wu, Tai-Bor
口試委員:
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年： 2010
畢業學年度： 98
語文別： 英文
論文頁數： 107
中文關鍵詞： 電阻轉換 、原子層化學氣相沉積 、二氧化鉿 、鈦金屬夾層
外文關鍵詞： resistive switching, atomic layer deposition, HfO2, Ti interlayers
相關次數： 點閱：2  下載：0 
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    • In this thesis, we have investigated the resistive switching characteristics of HfO2 thin film in Pt/Ti/HfO2/TiN capacitor structure. The 10-nm-thick HfO2 films are deposited on TiN/Ti/SiO2/Si substrate by atomic layer deposition (ALD), which can well control the film thickness precisely with high uniformity. The Pt top electrode and Ti inter layer are prepared by DC sputtering. The Pt/Ti/HfO2/TiN capacitors show distinct bipolar resistive switching characteristics, which the bipolar polarity would reverse during operation, with the change of Ti thickness. According to post-metal annealing effect at different temperatures, dependence of cell area on resistance state, material analysis, and electrical characteristics, it is tried to build up a model to elucidate the phenomenon of polarity reverse. In an addition, an improvement of resistive switching stability of HfO2-based memory can be achieved by using the Ti reactive interlayer, including good switching endurance and high temperature retention.

    Chapter 1. Introduction 11 1.1 Introduction 11 1.2 Research Motivation 13 Chapter 2. Literature Review 16 2.1 Semiconductor Memory 16 2.2 Emerging Non-volatile Memory 19 2.2.1 FeRAM (Ferroelectric RAM) 19 2.2.2 MRAM (Magnetoresistive RRAM) 20 2.2.3 PCRAM (Phase Chang RAM) 22 2.2.4 RRAM (Resistance RAM) 23 2.2.4.1 Perovskite oxide 26 2.2.4.2 Transition metal oxide 29 2.3 Effect of anodic interface on resistive switching 34 2.4 Mechanism of resistive switching 45 2.4.1 Conducting filament model 45 2.4.2 Interface-type conducting path 46 Chapter 3. Experimental Procedures 50 3.1 Motivation of experiment 50 3.2 Substrate and bottom electrode (TiN) fabrication 51 3.3 Fabrication of HfO2 thin film 51 3.4 Fabrication of Ti interlayer and Pt capping layer 51 3.5 Post-metal annealing process (PMA) 52 3.6 Physical analysis and electrical measurement 52 3.6.1 Transmission electron microscope (TEM) 52 3.6.2 Thin film composition analysis 52 3.6.3 Electrical analysis 53 Chapter 4. Results and Discussion 56 4.1 Structural and chemical analysis 56 4.1.1 Transmission electron microscope (TEM) 56 4.1.2 Thin film composition Analysis 56 4.1.2.1 X-ray photoelectron spectroscopy (XPS) analysis 56 4.1.2.2 Nano-auger electron spectroscopy (nano-AES) analysis 58 4.2 Electrical characteristics 63 4.2.1 As-deposition 63 4.2.1.1 Typical IV relation 63 4.2.1.2 Endurance and retention test 72 4.2.1.3 Resistance dependence on cell area 74 4.2.1.4 Polarity reverse model for as-deposition 80 4.2.2 Post-metal annealing 83 4.2.2.1 Typical IV Relation 84 4.2.2.2 High temperature retention test 97 4.2.2.3 Polarity reverse model after PMA 99 Chapter 5. Conclusion 101 Reference 102

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