本實驗利用濕式化學合成的方式，將醋酸鋅、醋酸鎂及醋酸鋰溶於正丙醇中，並加入單乙醇胺作為穩定劑，於70oC、300rpm下成功製備出透明澄清之穩定LiMgZnO溶膠，再利用旋轉塗佈的方式將LiMgZnO漿料均勻鍍於玻璃基板之上。將試片置於管爐中以500oC退火兩小時，得到純相的wurtzite，於可見光範圍其穿透率均大於80%具有良好穿透率，實驗結果中當Mg=10mol%，具有最高之載子遷移率為120 cm2/Vs，再藉由添加Li，當Li=0.4mol%取代Zn可產生較高之載子濃度高達2.6*1012 cm-3，載子遷移率為130 cm2/Vs，其原因為Li取代Zn會因為缺陷化學而產生大量電洞，因此得到一低電阻率、高載子濃度且穩定之p型LiMgZnO半導體。

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