OLED顯示器已成為顯示器技術中無可否認的最佳選擇，其技術在可製造性、性能、色彩質量和良率方面均不斷取得進步，強調此技術在遙遠未來的可靠性。此外，OLED的多面向發展，如透明和柔性產品，為顯示技術的發展樹立了標竿。
在過去的二十年裡，調整 OLED 元件結構的能力促進了元件的性能和特性。此外，使用高性能的第 2 代（磷光）和第 3 代（熱激化延遲螢光-TADF）發光體提高了性能，但由於難以收集傳統主體（單極和雙極主體）所產生的所有單重態和三重態激子，其性能受到限制。近年來，與傳統的主體不同，複合激子(Exciplex)主體由於可充分利用單重態和三重態激子而受到關注。複合激子是由物理混合施體以及受體分子製造而成，這讓調整以下參數提供了可行性，例如:1.調整單重態-三重態能量差(EST),2.電荷平衡3. 發射峰位置進而可以有效地提升主體之單重態和三重態激子的產生，並且可以有效地利用。
在第一部分中，具有所需特徵的最佳複合激子之組合必須通過一系列文獻調查和實驗分析確定。高效能之複合激子材料是由咔唑基施體材料 (BCC-36)以及三嗪基受體材料 (PO-T2T) 組合製作。此複合激子OLED(BCC-36:PO-T2T)是使用溶液處理為製程製造，其主體作為發光體。在沒有使用外部發光體下測量元件結果達到了90%的光致發光量子產率(PLQY)最高外部量子效益(EQE)為20%以及電流效率41cd/A
在第二部分中，研究了本系統作為常規 Gen-1 螢光 (C545T)、Gen-2 磷光 (Ir(ppy)2(acac)) 和 Gen-3 TADF (4CzIPN) 發光體的主體，其濃度將單獨優化以實現最大性能。在最佳溶液處理之條件下，相應的摻雜元件系統表現出最高的外部量子效益，分別為 12.5%（螢光）、30.6%（磷光）和 26.5%（TADF）。元件優異的性能歸功於擁有較高的光致發光量子產率(PLQY)， 出色的受激複合產率和降低的非輻射衰減因子(knrT)。由於複合激子主體和發光體之間擁有足夠的能量差，其電荷傳輸也會較佳。本元件之結構也較簡單，可以減少厚度以及避免光子阱。

OLED displays have emerged as an undeniably superior choice in display technology. OLED technology continuously demonstrates advancements in manufacturability, performance, color quality, and yield, emphasizing its reliability for the distant future. Furthermore, the versatile development of OLED, such as transparent and flexible products, established a benchmark in display evolution.
Over the last two decades, the ability to tune the OLED device structure has accelerated performance and characteristics. Further, using high-performing Gen-2 (Phosphorescent) and Gen-3 (Thermally Activated Delayed Fluorescent-TADF) emitters has improved performance, but the device's performance are restricted due to challenges in harvesting all the singlet and triplet excitons generated by the traditional host (unipolar and bipolar host). In recent year, exciplex host system is gaining attention owing of utilizing both singlet and triplet excitons unlike conventional host systems. Exciplex are formed by physically blending the donor and acceptor molecules, which provides the feasibility in tailoring the parameters such as (i) tuning the singlet-triplet energy difference (EST), (ii) charge balance, (iii) emission peak position, by which exciton generation can be effectively improved and both singlet and triplet generated excitons of the host can be utilized efficiently.
In the first section, the optimal exciplex combination with the required features is identified through a series of literature survey and experimental analyses. A highly efficient exciplex is formed by combination of carbazole based donor material (BCC-36) with triazine based acceptor material (PO-T2T). Pure exciplex (BCC-36:PO-T2T) OLEDs were fabricated using a solution-processed approach in which the exciplex host serves as an emitter. As a result, a photoluminescence quantum yield (PLQY) of 90% with pure exciplex emission was achieved, as well as high device performance with a maximum EQE of 20% and a current efficacy of 41 cd A-1 is solely achieved without using any external emitter.
In the second section, the exciplex system was studied as a host for conventional Gen-1 fluorescent (C545T), Gen-2 phosphorescent (Ir(ppy)2(acac)), and Gen-3 TADF (4CzIPN) emitters. Emitter concentration were individually optomised to achieve the maximum performance. Under optimum solution-processed device conditions, the corresponding doped device system demonstrated a highest EQE of 12.5% (fluorescent), 30.6% (phosphorescent), and 26.5% (TADF). Excellent device performance attribute to the high exciplex host PLQY, outstanding exciplex yield with decreased non-radiative decay (knrT) factor, an adequate energy difference between exciplex host and emitter, superior charge transportability, and simple device structure with reduced thickness for avoiding photon trap.

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