本論文主要採化學沉澱法製備摻鋁氧化鋅(Aluminum-doped zinc oxide (AZO))粉體。探討不同製程條件對於AZO特性的影響。首先將硝酸鋅和硝酸鋁配成溶液後與沉澱劑尿素或者氨水進行反應，摻雜不同的鋁鋅比例 (1%-11%)，改變反應溫度、鋅鋁溶液的反應順序。前驅物經高溫爐燒結400℃-800℃，獲得AZO粉體。所得AZO分別以熱重分析儀、感應耦合電漿原子發射光譜分析儀、X光繞射儀、掃描式電子顯微鏡、傅立葉轉換紅外光譜儀、光致螢光光譜儀作材料性質的測量。由熱重分析結果表明前驅物的燒結溫度應高於500℃；以ICP-AES確定AZO樣品鋁鋅比例與理論鋁鋅比例無太大差異。由X光繞射結果得知鋁有摻雜進入氧化鋅中，若燒結溫度高於600℃，樣品會產生雜質鋁酸鋅。掃瞄式電子顯微鏡顯示其形貌會因為摻雜鋁元素、沉澱反應溫度不同和沉澱劑不同，而產生不同形貌。從紅外光譜偵測到400-600cm-1之間有Zn-O的振動吸收，若樣品存在雜質鋁酸鋅，則在677 cm-1附近有一寬吸收峰。AZO的發光特性與ZnO相似， PL光譜於380 nm附近出現氧化鋅的本質發光，而570 nm與660 nm出現氧化鋅的深層缺陷發光。

Aluminum-doped zinc oxide (AZO) powders were synthesized using a chemical precipitation method. We use both reactants of zinc nitrate and aluminum nitrate as well as urea or ammonia as the precipitant to get precursor. Then the precursor with a doping rate varying from 1 to 11 mol.% of Al were calcined at 400℃-800℃ for three hours. The effects of the various synthesizing parameters, including reaction temperature, the doping amount of aluminum, and the pH value during chemical precipitation reaction, and the calcination temperature of the precursor were investigated in details. The results of inductively coupled plasma atomic emission spectrometer (ICP-AES) measurement ensured the stoichiometric ratio of Al/Zn in our AZO powders. By the thermogravimetric analysis (TGA), AZO powders stability generated when temperature higher than 500℃. The X-ray diffraction patterns showed that AZO powders exhibit Wurtzite ZnO structure. Thus we can determine that Al3+ is indeed doped into the zinc oxide. The powders calcined higher than 600℃ appeared the ZnAl2O4 phase. The images of scanning electron microscopy (SEM) showed different morphology depend on chemical reaction temperature or the pH value during chemical reaction or precipitant. In the Fourier-Transform Infrared Spectrum (FTIR), we observed vibration absorptions of Zn-O at 400-600 cm-1. A absorption peak was observed at 677 cm-1 if samples contain ZnAl2O. The luminescence properties of AZO and ZnO are similar. Observed intrinsic emission of ZnO at 380 nm and deep level emission of ZnO at 570 nm and 660 nm.

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