利用直接沉積高介電閘極氧化物於鍺半導體製作高效能金氧半元件

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研究生：	朱龍琨
論文名稱：	利用直接沉積高介電閘極氧化物於鍺半導體製作高效能金氧半元件 High Performance Germanium MOS Devices with Directly Deposited High-k Gate Dielectrics
指導教授：	洪銘輝黃倉秀
口試委員:	洪銘輝黃倉秀郭瑞年劉致為郭治群皮敦文
學位類別：	博士 Doctor
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2012
畢業學年度：	101
語文別：	英文
論文頁數：	226
中文關鍵詞：	鍺、金氧半元件、高介電氧化物
相關次數：	點閱：2 下載：0
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為了因應16奈米互補式金氧半技術的需要，在既有的矽半導體外，鍺半導體因為具有較高的載子遷移率而成為很有潛力的材料。高性能鍺金氧半元件必須同時達到極佳的高介電氧化物與鍺間的界面以及很低的等效氧化物厚度，然而因鍺本身有著不好的原生氧化物，使得要達成極佳的高介電氧化物與鍺間的界面變得十分困難。此研究利用在超高真空下直接沉積高介電氧化物於鍺上來製作金氧半元件，在沒有顯著的鍺擴散與界面層形成的情況下，達到氧化物的高介電常數與絕佳的氧化物與鍺間的界面。
在此論文中，分子束磊晶成長的氧化釔與氧化鎵(氧化钆)應用在鍺金氧半元件的製作。各樣的分析，包括化學、結構與電性都進行以了解此閘極層與界面。經由適當的退火與氟處理後，此鍺金氧半元件展現極高的特性，像是絕佳的電容-電壓特徵、低界面缺陷密度(1011 cm-2eV-1)、低漏電(小10-8 A/cm2)與高氧化鎵(氧化钆)界電常數(14到16)，這些都說明了此氧化物與界面的高品質與高熱穩定性。
進一步地，在金氧半場效電晶體中(線寬約1μm，等效氧化物厚度3.8 nm)，飽和電流密度、最高電導值與電洞遷移率分別高達496 μA/μm、178 μS/μm、389 cm2/V-s。當再降低氧化物厚度後，等效氧化物厚度則更小至約1.38 nm，伴隨著有系統的電晶體性能增益，使得飽和電流密度與最高電導值分別更達到約800 μA/μm與423 μS/μm，而電洞遷移率仍維持約300 cm2/V-s。氧化鎵(氧化钆)極佳的可微縮性以及其對於鍺表面鈍化的能力，使其具有相當的潛力在下世代鍺通道金氧半元件上被應用。

When channel materials other than Si are urgently demanded to enhance the performance of complementary metal-oxide-semiconductor (CMOS) beyond 16 nm technology node, Ge has always been considered as one viable contender because of its mobility advantages compared to Si. A high-quality interface between high- dielectrics and Ge as well as a small equivalent oxide thickness (EOT) are necessarily required for future high-performance Ge MOS device. However, it is challenging to achieve a good oxide/Ge interface mainly due to the unfavorable surface properties and native oxides of Ge. This work approaches Ge MOS devices with direct deposition of high-κ dielectrics on Ge under ultra-high-vacuum (UHV), while a high κ value of the gate oxides and a decent oxide/Ge interface quality are maintained without significant Ge inter-diffusion and formation of interfacial layers (ILs).
In this dissertation, molecular beam deposited (MBD) high- Y2O¬3 and Ga2O3(Gd2O3) [GGO] have been utilized as the gate dielectrics for Ge MOS devices without using ILs. Comprehensive investigations have been carried out chemically, structurally, and electronically, to study the gate stacks, especially the oxide/Ge interfaces. With appropriate post oxide deposition treatment for the gate stacks with GGO, such as annealing and fluorine incorporation, the Ge MOS devices, i.e., MOS capacitors (MOSCAPs) and MOS field-effect-transistors (MOSFETs), have exhibited very high performance. Excellent capacitance-voltage (C-V) characteristics, a low interfacial density of states (Dit’s) in the range of 1011 cm-2eV-1, and a low gate leakage of less than 10-8 A/cm2 along with a high  value (14-16) of the GGO indicate the gate dielectrics and GGO/Ge interface are of high quality and thermally stable. Furthermore, the MOSFETs, with a gate length (Lg) of 1 μm an EOT of ~3.8 nm, have yielded high performance in terms of a high drain current density (Id), a maximum transconductance (gm), and hole mobility (μh) of 496 μA/μm, 178 μS/μm, and 389 cm2/V-s, respectively. When further reducing the oxide thickness, a smaller EOT of ~1.38 nm has been achieved. The device performance has been systematically enhanced in good agreement with the increased oxide capacitance, showing an Id of 800 μA/μm and a gm of 423 μS/μm in a MOSFET with a Lg of 1μm, while the μh remained ~300 cm2/V-s. The excellent GGO scalability and its effective passivation for Ge surface suggest GGO stands a good chance of realizing the applications of Ge-channel pMOS devices for next-generation CMOS technology.

Abstract    i
Acknowledgement    iii
Publication List    v
Table of Contents    xii
List of Acronyms/Symbols    xvi
List of Tables    xix
List of Figures    xx
Chapter 1 Introduction    1
1    Present Si CMOS Technology    1
2    Beyond Si CMOS: High-mobility Ge and III-V Compounds?    9
3    Germanium: Properties and Surface Passivation    15
3.1 General Properties    15
3.2 Surface Passivation: GeOx, GeON, Si, and Others    19
4    Motivation    27
5    Organization    28
Chapter 2 Experimental Procedure    31
1    Germanium Surface Preparation    31
2    Molecular Beam Deposited High-k Dielectrics on Germanium    33
2.1 Y2O3    35
2.2 Ga2O3(Gd2O3)[GGO]    36
3    Fabrication of Ge MOS Devices    37
3.1 MOS Capacitor (MOSCAP)    37
3.2 MOS Field-Effect-Transistor (MOSFET)    38
3.3 Post Deposition Treatment: Annealing and Fluorine Incorporation    42
4 Characterization on Oxide/Ge and MOS Devices    45
4.1 Chemical and Physical Analysis    45
4.2 Capacitance-Voltage Measurement    50
4.3 Current-Voltage Measurement    54
4.4 Extraction of Interfacial Density of States    55
4.5 Transmission Line Measurement    58
Chapter 3 Y2O3 as Gate Dielectric    60
1 Characteristics of Y2O3 and Y2O3/Ge Interface    60
2 MOSCAP    64
2.1 The Use of in-situ Al2O3 Cap    64
2.2 Interfacial Quality, Gate Leakage, Y2O3 Scalability, and Thermal Stability…    65 
2.3 Effects of Forming Gas Annealing and Fluorine Incorporation    75
3 MOSFET    78
3.1 Electrical Characteristics of Ring-gate MOSFETs    78
3.2 Dependency of Device Performance on Gate Length    83
4 Summary    84
Chapter 4 Ga2O3(Gd2O3) [GGO] as Gate Dielectric - Part I    87
1 Characteristics of High-Temp. Deposited GGO and GGO/Ge Interface    87
2 MOSCAP    91
2.1 Interfacial Quality, Gate Leakage, and Thermal Stability    91
2.2 GGO/Ge Heterostructure: Energy-Band Parameters    95
2.3 Effects of Forming Gas Annealing & Fluorine Incorporation    101
3 MOSFET    106
3.1 Electrical Characteristics of MOSFETs    106
3.2 Series Resistance and Intrinsic Performance    111
3.3 Dependency of Device Performance on Gate Length    114
3.4 Benchmark and Comparison    115
4 Summary    116
Chapter 5 Ga2O3(Gd2O3) [GGO] as Gate Dielectric - Part II    119
1 Characteristics of Room-Temp. Deposited GGO and GGO/Ge Interface    119
2 MOSCAP    123
2.1 Thick GGO without in-situ Al2O3 Cap    124
2.2 Effects of Fluorine Incorporation: without and with Al2O3 Cap    127
2.3 Effects of Post Deposition Treatments on Thin GGO with Al2O3 Cap……………………………………………………………...………..............140
2.4 Scalability of GGO: Achieving Sub-nm Capacitance Equivalent Thickness of GGO    145
2.5 Photoemission Analysis by Synchrontron Radiation on Post Deposition Treated Al2O3/GGO/Ge    152
3 MOSFET    162
3.1 Electrical Characteristics of MOSFETs    162
3.2 Series Resistance and Intrinsic Performance    167
3.3 Dependency of Device Performance on Gate Capacitance    170
3.4 Benchmark and Comparison    175
4 Summary    177
Chapter 6 Conclusions and Outlook    181
1 Conclusions    181
2 Outlook    184
References    187
Appendix－
Alternative High Mobility Channels: III-V Compound Semiconductors    202
I. Molecular Beam Deposited High-k Dielectrics on In0.53Ga0.47As: Achieving Sub-nm Equivalent Oxide Thickness and Low Interfacial Density of States    203
II. Molecular Beam Deposited Al2O3 on InP with Various Surface Orientations (001), (110), and (111)    215
                                

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