在本論文中針對新架構的SONOS快閃記憶體元件採用不同階段的快速熱處理條件，來探討記憶體元件的初始特性及可靠度分析；首先，藉由不同的上層氧化(top oxide)層厚度來探討結構的差異對SONOS元件電特性的影響；當上層氧化層厚度較厚的元件與上層氧化層厚度較薄的元件比較時，我們可發現以下幾個特點：1.在寫入特性方面，若要讓啟始電壓飄移量較大時，需要有較薄的上層氧化(top oxide)層厚度，而在抹除方面，較薄的上層氧化(top oxide)層厚度也會在比較短的時間內抹除氮化層陷阱（trap）所陷住的電子；而在電荷保持力方面，兩者僅有些微的差距，還有在抗汲極電壓干擾方面也是以較薄的上層氧化(top oxide)層擁有較佳的特性。
本篇論文所探討的另一個特性則是在沈積底層氧化（bottom oxide）層與氮化層後所搭配的不同階段的快速熱處理，其中底層氧化（bottom oxide）層沈積後所做的處理有三項：分別是不做任何熱處理、一階段的N2O熱處理製程與做完一階段的N2O熱處理製程後再加第二階段的N2O熱處理製程。
接著在做完上述步驟後，再沈積中間的氮化層，待沈積完成後所的熱處理有三項：不做任何的熱處理、一階段的NH3熱處理製程（使用爐管）與做完一階段熱處理製程後在作第二階段的N2O熱處理製程。
經由上述實驗所得的數據，當SONOS元件的ON兩層不做任何的熱處理製程時，其讀/寫方面表現出較佳的元件特性，且擁有更快的操作速度，僅在電荷保持力的部分稍微差了點，另外在抗汲極電壓干擾的能力也較強。
還有在電荷保持力的比較上，我們發現所對氮化矽層進行氨氣（NH3）800℃ /10 min. 氮化製程的熱處理會使SONOS元件在電荷保持力上超過不做任何熱處理的元件；然而再多的熱處理製程對元件的電荷保持力增強有限，反而會使元件的記憶體特性下降。

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