石墨烯因其具有獨特的原子結構和出色的性質，被喻為未來高效元件的重要材料。近年來已不斷吸引全世界的頂尖研究團隊加入。直至目前為止，已經有許多石墨烯合成方法被發表。然而，在未來實際工業應用方面，至今還沒有真正符合低成本且有效率的合成方式。因此之故，此研究成功地利用雷射快速且低耗能動態成長石墨烯於一般玻璃基板。雷射成長之直寫圖案且快速合成的特性，可以與現今的半導體光電產業相結合。
我們利用連續波長為808奈米的近紅外光雷射聚焦於目標基板上，直接寫入花樣圖案。石英基板上沉積以鎳薄膜做為金屬催化劑，而後旋轉塗布PMMA高分子或直接沉積非晶碳膜做為合成的碳源。經由雷射照射加熱後的區域會在鎳金屬薄膜的上下表面析出石墨烯薄膜。輔以各種材料分析，如拉曼光譜分析、穿透式電子顯微鏡分析等對雷射合成出的石墨烯膜薄做有系統的研究，並提出鎳催化雷射合成石墨烯的可能成長機制。
我們相信此種先進新穎的雷射快速合成石墨烯方式對於未來產業的應用發展方面，極具貢獻。

Graphene, owing to its unique structural and outstanding properties, is regarded as one of the most important materials for future high performance devices and has been attracted lots of research groups all over the world. Until now, there are many ways to synthesize graphene for research purposes. However, there are no convinced and cost-efficient way for real industrial applications. In this regard, we successfully demonstrate a rapid fabrication of graphene on glass substrate by laser. The properties of low power consumption and fast growth that is highly compatible with real semiconductor manufacturing process. It can be also considered as a fast and dynamic growth process.
The 808 nm near-infrared laser continuous wave laser is used to focus on glass substrate with a patterned nickel thin film (Ni TF) as metal catalyst. PMMA (or amorphous carbon) is deposited on top of the Ni TF as solid carbon source. As a result, few-layer graphene can be synthesized on both sides of Ni TF after the laser irradiation successfully. Microstructures were characterized by Raman spectroscopy and transmission electron microscopy (TEM). In addition, we propose a possible mechanism for this laser synthesis process on Ni.
We believe this novel, fast and convenient way for graphene synthesis can have a significant contribution to future applications.

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