表面波電漿源自1960年代發展以來被發現具有高密度、穩定、大面積均勻分布等優良特性，目前在學界與工業界的研究中主要使用「單功率微波電漿源」，透過不同的耦合設計使得「單功率微波電漿源」在特定的氣體種類、氣壓與功率下可以產生大面積均勻分布的電漿，但製程條件的自由度較為受限。
隨著半導體工業的發展，出現了複雜度較高的電漿製程，「單功率微波電漿源」已逐漸無法在多變的製程條件下依舊維持產生大面積均勻分布電漿的優點。故本研究使用「雙功率微波電漿源」的設計概念，透過兩個微波功率源分別用於控制電漿腔體外圍與腔體中心的電漿密度分布特性，本研究專注在後者，建立其數值模擬模型並命名為「TM010 mode微波共振腔表面波電漿源」，其特點在於微波共振腔位於電漿腔體的外部。本研究建立HFSS電磁數值模擬模型與COMSOL Multiphysics電漿數值模擬模型，模型包含電磁理論、電漿理論以及流體與熱傳理論，探討其電漿特性與微波特性並建立其調頻模擬之流程；實驗上則使用蘭繆爾探針量測微波電漿之電漿特性。
模擬結果顯示，微波透過同軸天線耦合進入TM010 mode微波共振腔後，再由共振腔下方的溝槽天線耦合進入下方電漿腔體，電漿腔體是由介電質窗與電漿區組成，其結構為一介電質表面波波導，最後微波在介電質窗表面形成駐波形式的表面波並激發氣體產生電漿，其電子密度空間分布集中在電漿腔體中心處。在微波吸收功率500 W，氬氣電漿，氣壓30 mTorr時，電子密度約為1018 1/m3，電子溫度約為2~7 eV。此外，從調頻流程之模擬中可以得知，在「固定微波輸入功率」的操作條件下，使用此調頻流程，可以使得微波反射功率下降，且其電漿特性與微波特性皆與「固定微波吸收功率」之模擬結果相近。此結果未來可以應用在使用「可調頻式固態微波功率源」之微波電漿源，並設計分析其微波耦合的特性。
在氫氣電漿的方面，相同操作參數下氫氣電漿之電子密度較氬氣電漿小約一到二個數量級且電子密度空間分布也更加均勻。進一步探討氬氣電漿與氫氣電漿之重粒子產生與消耗之效應，在相同電子密度下，氫氣電漿在重粒子整體產生與消耗反應速率上較氬氣電漿高約一個數量級。
最後量測實驗結果顯示：1.環型共振腔微波電漿源隨微波淨功率上升而電漿密度上升、2.電漿密度遠離腔體中心而下降、3.在微波功率約900 W處有一電子加熱之模式轉換。

Surface wave plasma developed in the 1960s and was found to have excellent characteristics such as high plasma density, stability, and uniform distribution in a large area. At present, "single power microwave plasma source" is mainly used in the research of academia and industry through different couplings. The design enables the "single-power microwave plasma source" to produce a large area uniformly distributed plasma under a specific gas, pressure, and power, but the degree of freedom of the process conditions is relatively limited.
With the development of the semiconductor industry, more complicated plasma processes have developed. The "single-power microwave plasma source" has gradually been unable to maintain the advantages of producing uniformly distributed plasma over a large area under variable process conditions. Therefore, this research uses the design concept of "dual power microwave plasma source". Two microwave power sources are used to control the plasma density distribution characteristics at the periphery of the plasma cavity and the center of the cavity. This research focuses on the latter and establishes numerical simulation model is named "TM010 mode microwave resonant cavity surface wave plasma source", which is characterized in that the microwave cavity is located outside the plasma cavity. This research establishes HFSS electromagnetic numerical simulation model and COMSOL Multiphysics plasma numerical simulation model. The model includes electromagnetic theory, plasma theory, fluid, and heat transfer theory, discusses its plasma characteristics and microwave characteristics, and establishes its frequency tuning simulation process; The Langmuir probe is used to measure the plasma characteristics of microwave plasma.
The simulation results show that the microwave is coupled into the TM010 mode microwave resonant cavity through the coaxial antenna. Then microwave is coupled into the plasma cavity below by the slot antenna which is under the microwave resonant cavity. The plasma cavity is composed of a dielectric window and a plasma area. Its structure is a dielectric surface waveguide. Finally, the microwave forms a standing wave on the surface of the dielectric window and excites the gas to generate plasma. The spatial distribution of electron density is concentrated in the center of the plasma cavity. When the microwave absorption power is 500 W, argon plasma, gas pressure is 30 mTorr, the electron density is about 1018 1/m3, and the electron temperature is about 2-7 eV. In addition, it can be known from the simulation of the frequency tuning process that under the operating conditions of "fixed microwave input power", using this frequency tuning process can reduce the reflected microwave power, and its plasma characteristics and microwave characteristics are the same as those of "fixed microwave absorption power". This result can be applied to microwave plasma sources which using "tunable frequency solid-state microwave power sources" in the future to design and analyze the characteristics of microwave coupling.
In terms of hydrogen plasma, under the same operating parameters, the electron density of hydrogen plasma is about one to two orders of magnitude smaller than that of argon plasma, and the spatial distribution of electron density is more uniform. Further discuss the effect of heavy particle production and consumption of argon plasma and hydrogen plasma. Under the same electron density, hydrogen plasma has a higher total production and consumption reaction rate of heavy particles than argon plasma by about an order of magnitude.
The measurement experiment results show that: 1. The plasma density of the toroidal resonant cavity microwave plasma source increases with the increase of the microwave net power. 2. The plasma density decreases away from the center of the cavity. 3. There is a mode transition of electronic heating when the microwave power is about 900 W.

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