In this thesis, we demonstrated for the first time that HfON thin film was fabricated by atomic layer deposition (ALD) using TEMAH and NH3 as precursors. The uniformity and composition could be precisely controlled. The chemical state of Hf-N bonding and structural analysis were identified by XPS spectra and XRD spectra, respectively. Then, we introduced a 2.5nm thick HfON thin film into MANOS capacitor as charge trapping layer. The significant hysteresis loops found in the C-V relation indicated the excellent charge storage effect. In addition, the erase characteristic was investigated and a de-trapping model for the erase mechanism was proposed by using transient analysis method. A satisfactory retention performance was found due to the deep-trap energy levels in HfON trapping layer.
　　Moreover, the capability of HfON material as charge trapping layer was investigated by increasing the thickness of HfON in MANOS capacitor. The charge storage effect was enhanced with increasing HfON trapping layer, but the faster erase speed and poorer retention characteristics were observed as well. It may be attributed to the crystallization of thicker HfON trapping layer after annealing at 900℃, which would generate grain boundaries as leakage current paths and increase lateral conduction during retention.

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