應用於5G頻段之極低功耗低雜訊放大器｜國立清華大學博碩士論文庫

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研究生：	周旨謙 Chou, Tzu-Chien
論文名稱：	應用於5G頻段之極低功耗低雜訊放大器 Ultra-Low-power Low-Noise Amplifiers for 5G Applications
指導教授：	徐碩鴻 Hsu, Shou-Hung
口試委員:	李俊興 Li, Chun-Hsing 孟慶宗 Meng, Chin-Chun
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering
論文出版年：	2019
畢業學年度：	107
語文別：	英文
論文頁數：	72
中文關鍵詞：	低雜訊放大器、低功耗設計、第五代通訊
外文關鍵詞：	low noise amplifier, low power design, 5G
相關次數：	點閱：2 下載：0
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近年來隨著無線通訊系統的不斷提升，對資料的傳輸量要求越來越高，所以從較低的頻段發展到高頻的5G頻段，如此高頻的應用包括雷達、高速通訊和生醫影像傳輸。
無線接收機前端電路一般架構中，低雜訊放大器(LNA)為接受端系統最為重要的一塊。主宰著整個系統的雜訊，同時也需要足夠的增益(Gain)來放大接受的訊號!。
然而，在操作頻高達28GHz的5G頻段下，由於寄生效應，使得放大器的增益即使在達到共軛匹配的情況下，還是難以提高。其中一解決方式為提升供給電壓VDD來達成足夠的增益，但是此方式並不利於目前5G產品邁向低功耗設計的走向。另一方面，低雜訊放大器中的雜訊也與供給電壓(VDD)成Trade off的關係，意即要降低雜訊勢必要提高供給電壓(VDD)，而提高供給電壓(VDD)的話又會增加電路的功耗。因此，本研究試著使用新型的電路架構來設計低功耗低雜訊放大器，並且有著足夠的增益。改善並解決以上所提到的問題。
本篇論文運用新型純化的電路架構，讓第一顆低雜訊放大器(LNA)有著15dB的增益、4.4dB的雜訊指數且只消耗1.56毫瓦。第二顆低雜訊放大器(LNA)有著17.2dB的增益、3.9dB的雜訊指數且只消耗2.75毫瓦，整體電路效能皆高於參考文獻的作品。

Continuous scaling of CMOS technology keeps driving the innovation of RFICs with higher integration level and lower cost. Significant efforts on the study of both devices and circuits also substantiate the wireless communication systems operating toward higher frequencies. Using the 5G-band for short-range and high data-rate wireless communication and anti-collision radars is recently of great interest to both industry and academia. Similar with other portable wireless applications, low-power design is a critical issue.
Our target is to achieve ultra low-power low-noise amplifiers at 28 GHz, The gain, and noise are also the main design considerations. The proposed circuit use the neutralization method to cancel the effect of the gate-drain parasitic capacitance C_gd and obtain high gain, low power, and low noise performance for circuit simultaneously.
Two compact ultra-low-power 28 GHz low-noise amplifiers both with a power consumption of below 3 mW and core area below 0.6mm2 are demonstrated in 90 nm CMOS.
The first LNA circuit achieves a peak gain of 15 dB and a minimum NF of 4.4 dB under a supply voltage of 0.48 V. The associated power consumption is only 1.56 mW. The second LNA circuit in obtains a peak gain of 17.2 dB and a minimum NF of 3.9 dB under a supply voltage of 0.48 V. The associated power consumption is only 2.75 mW. Both of LNAs achieve excellent figure-of-merits, among the best compared with previous published works.

致謝    III
摘要    IV
ABSTRACT    V
TABLE OF CONTENTS………………………………………………...............................VI
LIST OF FIGURES……………………………………………………………………….VIII
LIST OF TABLES…………………………………….........................................................XII
Chapter 1 Introduction    1
Chapter 2 Fundamentals of RF Design    2
2.1 Units in RF Design    2
2.2 Nonlinearity    4
2.3 Noise    10
2.4 Sensitivity and Dynamic Rang    16
2.5 Power Gain Boosting…………………………………………………………….....17
2.5.1 Relationship Between U and Gmax…………………………………………..17
2.5.2 The Gain-Plane Approach Under the Condition | A|>> 1……………………..19
2.5.3 General Gain-Plane Approach for All Values of MSG………………………..22
2.5.4 Necessary and Sufficient Condition for Maximum Power Gain………………25
2.5.5 Study of Y-Embedding and Z- Embedding Networks Using Gain-Plane Approach……………………………………………………………………………………..26
Chapter 3 Low power topology for LNA design    30
3.1    Current Reuse    30
3.2    Gate Biasing    36
3.2.1 Strong Inversion……………………………………………………………...36
3.2.2 Weak Inversion…………………………………………………………….....38
3.2.3 Moderate Inversion…………………………………………………………...39
3.2.4 Moderate and Weak Inversion Benefits………………………………………39
3.3    Forward Body Biasing    41
Chapter 4 Double Transformer-Feedback LNA design    42
4-1 Introduction    42
4-2    Purposed LNA    43
4.2.1 Transformer-Feedback Technique for noise and input impedance matching    43
4.2.2 Performance of Transformers    45
4-3    Simulation and Measurement    49
4-4 Conclusion    52
Chapter 5 Triple Transformer-Feedback LNA design    54
5-1  Introduction    54
5-2  Purposed LNA    55
5.2.1 Transformer-Feedback Technique for noise and input impedance matching    55
5.2.2 Performance of Transformers    58
5-3  Simulation and Measurement    64
5-4  Conclusion    67
Chapter 6 Conclusion and Future Works    69
6-1  Conclusion    69
6-2  Future works    69
REFERENCES    71


                                

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