| 研究生: |
羅俊元 Chun Yuan Lo |
|---|---|
| 論文名稱: |
快閃記憶體新寫入方式與模擬分析 A New Programming Method for Flash Memory Cells and Simulation Analysis |
| 指導教授: |
張廖貴術
K.S. Chang-Liao |
| 口試委員: | |
| 學位類別: |
碩士 Master |
| 系所名稱: |
原子科學院 - 工程與系統科學系 Department of Engineering and System Science |
| 論文出版年: | 2003 |
| 畢業學年度: | 91 |
| 語文別: | 中文 |
| 論文頁數: | 98 |
| 中文關鍵詞: | 快閃記憶體 、新寫入方式 、元件模擬 |
| 外文關鍵詞: | Flash Memory, New Programming Method, Simulation |
| 相關次數: | 點閱:128 下載:0 |
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本篇論文提出了一個新的寫入方式,稱為方法(A),此方法為將源極接面順偏,使得電流密度增加,進而注入電流密度也會增加,實驗結果發現寫入速度比通道熱載子注入法快了約10倍,此方法的缺點為基板漏電流太大。
利用2D元件模擬軟體-Medici分析,發現此方法注入電流較大的原因為:電流密度的分佈與注入機率密度的分佈重疊面積較大,兩者相乘之下,使得注入電流密度比通道熱載子注入法大,所以寫入速度較快。
本篇論文也針對源極抹除與通道抹除作一比較,比較的項目有:臨界電壓的偏移、抹除速度、氧化層接面陷住電荷的多寡,結果發現本實驗樣是比較適合源極抹除,其抹除速度較快,臨界電壓在施加應力後,臨界電壓的偏移量較小,汲極接面的Not量也比較小,傷害多半集中在源極接面。
參考資料
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