以矽化物為催化劑與源極汲極材料於自動對準奈米碳管場效電晶體之應用

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研究生：	楊偉昌 Wei-Chang Yang
論文名稱：	以矽化物為催化劑與源極汲極材料於自動對準奈米碳管場效電晶體之應用 Silicide as a Catalyst and Source/Drain Electrode for Self-aligned Carbon Nanotube Field-Effect Transistor
指導教授：	游萃蓉 Tri-Rung Yew
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2006
畢業學年度：	94
語文別：	英文
論文頁數：	55
中文關鍵詞：	奈米碳管、矽化物、化學氣相沉積
外文關鍵詞：	Carbon nanotube, Silicide, Chemical vapor deposition
相關次數：	點閱：2 下載：0
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Single-walled carbon nanotubes (CNTs) are synthesized between predefined catalytic silicide pads by chemical vapor deposition (CVD) from 600 C to 900 C. Self-assembled field-effect transistors fabricated with these controlled-growth nanotubes between silicide electrodes show high-level compatibility with current silicon CMOS process. The silicide pads are formed by thermal annealing process of multi-layer thin film consisting of catalytic metal, supporting materials, and silicon with various crystalline structures. Before the synthesis process, silicide pads are pretreated by thermal and plasma to enhance its catalytic ability. Scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), Raman spectroscopy, and electrical measurement are employed to characterize the physical, chemical, and electrical properties of the self-aligned carbon nanotube field-effect transistors. Furthermore, sensor applications will be discussed with these self-assembled field-effect transistors.

Abstract    I
Acknowledgement    II
Contents    IV
List of Figure    VI
List of Table    X
Chapter 1  Introduction    1
Chapter 2  Literature Review    3
2.1 Carbon Nanotube Field-Effect Transistor    3
2.2 Cobalt Silicide Formation    7
Chapter 3  Experimental    11
3.1 CNFET Fabrication    11
3.1.1 Process Flow    11
3.1.2 Substrate Preparation    13
3.1.3 Silicide Electrodes Deposition    13
3.1.4 Layout and Lithography    14
3.1.5 Carbon Nanotube Growth in Thermal CVD    16
3.1.6 CNT Morphology Analysis    17
3.1.7 Raman Spectrum Analysis    17
3.1.8 Microstructure Examination    18
3.1.9 Electrical Characterization    18
Chapter 4  Results and Discussion    19
4.1 Morphology of CNFET    19
4.2 Graphitization of Carbon Nanotubes    24
4.2.1 CNT Growth versus Process Temperature    24
4.2.2 CNT Growth versus Process Pressure    26
4.2.3 CNT Growth versus C2H2/H2 Flow Ratio    29
4.2.4 CNT Growth versus Cap Layer Thickness    32
4.3 Microstructure of Cobalt Silicide Nanoparticles    34
4.4 Electrical Characteristics of CNFET    45
Chapter 5  Conclusion    52
Chapter 6  Reference    53

                                

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