金屬矽化物擁有高熔點、高穩定性和低電阻等優點，常應用於積體電路中作為閘極和接觸之材料。而在深次微米的積體電路技術中，由於線寬、接觸面積和接觸深度都逐漸縮小的情況下，奈米尺寸金屬矽化物的發展也漸漸受到重視。而本研究主要著重在一維矽化鈷奈米線的製備，以及探討其在場發射性質上的特性。

Cobalt silicide nanowires have been synthesized with cobalt chloride precursor using a simple atmospheric pressure chemical vapor transport and reaction method without intentional metal catalysts. The synthesized nanostructure with various morphologies and phases were controlled by varying the temperature and the vapor pressure.
The diameters and lengths of CoSi single-stem nanowires are 40-80 nm and tens of micrometers, respectively. The three-dimensional (3D) network structure of CoSi phase is 10-20 □m in size with an average diameter of 100 nm. The Co2Si nanowires were synthesized at a higher temperature. Diameters and lengths of Co2Si nanowires are 20-50 nm and several micrometers, respectively. The Co2Si aloe-like nanowires are about 10 □m in size.
The turn-on and threshold fields of 1.42 V/□m and 2.05 V/□m, respectively, were obtained for the CoSi nanostructure in field-emission measurements.

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