在此篇論文中，我們藉由鋅元素多重能量佈植隔絕的方式，在矽基板上製作了氮化鋁鎵/氮化鎵高電子遷移率電晶體，有效降低元件之間漏電流及內部漏電流，當元件通道長度3μm，閘極至汲極長度7μm，獲得不錯的電流開關比(Ion/Ioff=6.2×106)及次臨限斜率(St=112 mV/dec)。且利用閘極場平板來降低閘極區域峰值電場，達到更優越的崩潰電壓。量測結果顯示，通道長度3μm，閘極至汲極長度40μm，閘極場平板長度2μm的元件，最高崩潰電壓約為2300V，而此元件的導通電阻為14.8mΩ-cm2，其評比效能BFOM值為372.8 MW/cm2。最佳評比效能BFOM值的元件為664 MW/cm2，其崩潰電壓為1609V，通道長度3um，閘極至汲極長度20μm，閘極場平板長度2μm的元件，導通電阻為3.9 mΩ．cm2。

In this research, AlGaN/GaN high electron mobility transistors were fabricated on a silicon substrate. Isolation between devices was achieved by multi-energy Zn implantation, significantly suppressing the leakage current within and between devices. The on/off current ratio for the device with 3μm Lch and 7μm LGD is 6.2×106 and the subthreshold slope is 112 mV/dec. Gate field plates were applied in order to obtain high breakdown voltages. Measurements show that, for the device with 3μm Lch, 40μm LGD, and 2μm gate field plate, the maximum breakdown voltage is around 2300 V, while the on-resistance is 14.8mΩ-cm2. The BFOM is 372.8M W/ cm2 for this device. For the device with the highest BFOM of 664MW/cm2, the breakdown voltage is 1609 V and the on-resistance is 3.9 mΩ．cm2. The channel length is 3μm, the gate to drain spacing is 20μm, and the gate field plate is 2μm.

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