The growth kinetics of the elongated NiSi2 clusters and the shape transition between symmetric and asymmetric structures in epitaxial three-dimensional strained islands

簡易檢索 / 詳目顯示

回結果列表

研究生：	朱彥璋 Yen-Chang Chu
論文名稱：	The growth kinetics of the elongated NiSi2 clusters and the shape transition between symmetric and asymmetric structures in epitaxial three-dimensional strained islands 長形NiSi2奈米磊晶結構的成長機制及三維奈米磊晶結構對稱及非對稱形狀間的轉變
指導教授：	蔡哲正 Cho-Jen Tsai
口試委員:
學位類別：	博士 Doctor
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2008
畢業學年度：	96
語文別：	英文
論文頁數：	166
中文關鍵詞：	三維磊晶結構
外文關鍵詞：	3-D epitaxial structure
相關次數：	點閱：2 下載：0
分享至:	分享至facebook 分享至twitter

查詢本校圖書館目錄查詢臺灣博碩士論文知識加值系統勘誤回報

近年來，自發性生成的奈米磊晶金屬矽化物結構不論是在實驗上或是理論上都受到廣泛的矚目。因為具有微小的尺寸及良好的結晶性，這些結構有機會被用來製作自組裝的量子點或量子線。奈米磊晶結構的形狀及尺寸對結構本身的光性及電性都會有影響，因此瞭解奈米結構的成長機制以對奈米結構的形貌進行精確的控制是很重要的。
過鍍金屬奈米磊晶矽化物的成長機制一般都是引用自其它磊晶系統的成長機制。然而，這些機制是否真的適用於這些矽化物卻未經過詳細地確認。為了確認奈米磊晶矽化物的成長機制，此實驗對NiSi2奈米結構的結構、能量及形狀分佈做了詳盡的探討。
數種不同的NiSi2奈米結構在此實驗中被觀察到，各種結構和矽基板間的磊晶關係都被分析。實驗中發現，NiSi2的結構受到鍍膜速率的影響。藉由控制鍍膜速率在適當的範圍內，長方形NiSi2磊晶結構可單獨存在。這方法將有助於控制NiSi2磊晶的結構。
NiSi2磊晶結構的應變能在此實驗中以有限元素方法模擬而得。在和表面能相加後，我們可以推測NiSi2磊晶結構最穩定的形狀。因為實驗中觀察到的形狀分佈和理論計算的穩定形狀不合，我們認為長方形NiSi2磊晶結構之所以會沿一軸伸長的原因主要是由成長動力學的因素所引起。成長動力學的機制可成功用來解釋實驗中觀察到的NiSi2磊晶結構的形狀分佈。
有限元素方法在此實驗也被用來模擬應變能在不同磊晶結構中隨結構長寬比變化的情形。我們發現磊晶結構應變能隨長寬比變化的方式將受到結構的高度、磊晶薄膜和基板的彈性係數、及晶格的對稱性所影響。如果磊晶結構的高度相對於長度及寬度很小、磊晶薄膜的彈性系數相對於基板的彈性系數很小、或是薄膜及基板間具有非對稱的晶格匹配，則非對稱結構將具有較低的應變能。對稱結構具有較低的應變能在相對的條件下。藉由模擬所得的應變能結合磊晶結構可能的表面能，我們可以預測在不同成長條件下磊晶結構在成長過程中形狀變化的過程。

The spontaneous formation of epitaxial three-dimensional transition-metal-silicide nanostructures is an active subject in experimental and theoretical research in recent years. The small size and the crystalline perfection of these nanostructures imply the possibility of using them as self-assembled metallic quantum dots or quantum wires. Well-defined shapes and uniform sizes are the most critical issues concerning both optical and electronics applications of nanostructures. To control the morphology, we must truly understand the growth mechanisms of these nanostructures.
Most of the growth mechanisms used to explain the growth process of the transition-metal-silicide nanostructures are quoted from the growth mechanisms of other epitaxial systems, however, there is no confirmation that these theories are suitable for the epitaxial silicide nanostructures. To decide the growth mechanism of the epitaxial NiSi2 nanostructures, the structures, the energy, and the shape distribution of the epitaxial NiSi2 nanostructures are investigated exhaustively in this thesis.
Several kinds of epitaxial NiSi2 nanostructures were found in this experiment, and the epitaxial relationship with the Si substrates were analyzed for each structure. The structures of the NiSi2 nanostructures were found affected by the deposition rate; by controlling the deposition rate, the rectangular hut structures could exist alone. This method is helpful in controlling the structure of the epitaxial NiSi2 nanostructures.
Finite-element method was used to simulate the strain energy of the epitaxial NiSi2 nanostructures. After combining with the surface energy, the stable shape of the NiSi2 hut structures was determined. Because the shape distribution of the NiSi2 clusters is not consistent with the stable shape of the NiSi2 nanostructures calculated here, we infer that the elongation process of the NiSi2 clusters should be mainly governed by the growth kinetics. A growth process based on the kinetic model was used to explain the existence of the elongated NiSi2 clusters and the shape distribution of the clusters observed in this experiment.
Finite-element method was also used to simulate the strain energy of three-dimensional epitaxial structures which grow under different conditions. The evolution of strain energy with the aspect ratio (length/width) of the epitaxial structures was found to be affected by the height, the elastic constant of the substrates and the epilayers, and the symmetry of the lattice mismatch of these structures. Asymmetric structures will have smaller strain energy if the height of the epitaxial structures is fixed or growing very slowly, or the ratio of the elastic constant of the epilayer to that of the substrate is smaller, or the lattice mismatch between the substrates and the epilayers is asymmetric on the epitaxial surface. For different growth and surface energy conditions, the shape-transition process between symmetric and asymmetric structures is discussed.

Contents

Abstract………………………………………………………………...IV
List of Tables…………………………………………………………VIII
Figure Captions………………………………………………………..IX

Chapter 1. Introduction……………………………………………...…1
1 Epitaxial nanostructures…..………………………………………………..1
2 Epitaxial Silicides…………..……………………………………………….3
2.1 Epitaxial NiSi2 and CoSi2 Silicides….………………………..………4
2.2 Epitaxial Silicide Nanostructures…………..………..............………..6
3 The Growth Mechanisms of the Elongated Epitaxial Silicide Nanostructures………..……………………………………………………..7
3.1 Energetic Model………..…………………………………………..…8
3.2 Kinetic Model…………..……………………………………………10
4 Finite Element Method……..……………………………………………..12
5 Motive……………………..…………………………………….………….13
Chapter 2. Experimental Procedures………………………………...16
1 Surface Cleaning…………………………………………………………..16
2 Deposition Systems………………………………………………………...17
3 Sample Preparation for Transmission Electron Microscope Observation
   ………………………………………………………………………………18
3.1 Cross-Section Specimen……………………………………………..18
3.2 Plane-View Specimen………………………………………………..18
4 Characterization…………………………………………………………...19
4.1 Scanning Electron Microscope………………………………………19
4.2 Transmission Electron Microscope………………………………….19
5 The Energy in Simple Epitaxial Structures……………………………...19
6 Simulation Software……………………………………………………….21
Chapter 3. Results and discussion…………………………………….29
1 The Structures of the Epitaxial NiSi2 Clusters…………………………..29
1.1 The Structures of the Epitaxial NiSi2 Clusters Deposited on Si(001) Substrate…………………………………………………………….29
1.1.1 The Structures of the Epitaxial NiSi2 Clusters Grown at Slow Deposition Rate………………………………………………30
The rectangular hut (R-type) structure………………………….30
The wire (W-type) structure…………………………………….31
The parallel-epipedal (P-type) structure………………………...33
1.1.2 The Structures of the Epitaxial NiSi2 Clusters Grown at Middle Deposition Rate………………………………………………34
1.1.3 The Structures of the Epitaxial NiSi2 Clusters Grown at High Deposition Rate………………………………………………35
The hut and the truncated-hut structures………………………..35
The stone-like (S-type) structure………………………………..35
1.1.4 The Effect of Growth Temperature on the Structure Distribution of the NiSi2 Clusters………………………………………….36
1.2 The Structures of the NiSi2 Eputaxial Clusters Deposited on SOI Substrates…………………………………………………………...37
1.3 Discussion…………………………………………………………...38
2 The Shape Distribution of the NiSi2 Clusters……………………………38
2.1 The Shape Distribution of the NiSi2 Clusters Grown on Si(001) Substrates…………………………………………………………...39
2.2 The Shape Distribution of the NiSi2 Clusters Grown on SOI Substrates…………………………………………………………...40
2.3 Discussion…………………………………………………………...41
3 The Energy Evolution in Simple Geometric Structures………………...42
3.1 The Strain Energy Evolution in Simple Geometric Structures………42
3.1.1 The Strain Energy Evolution of the Hut Structures…………..42
3.1.2 The Strain Energy Evolution of the Truncated-hut Structures.44
3.1.3 The Strain Energy Evolution of the Rectangular Structures…45
3.1.4 Explain the Strain Energy Evolution on Different Epitaxial Structures by Observing the Stress Distribution in the Rectangular Structures……………………………………….46
3.1.5 The Effect of Elastic Constant on the Strain Energy  Evolution……………………………………………………..49
3.1.6 The Effect of Anisotropic Lattice Mismatch on the Strain Energy Evolution……………………………………………..52
3.1.7 Discussion……………………………………………………53
3.2 The Surface Energy in Simple Geometric Structures………………..54
3.2.1 The Surface Energy of the Hut Structures……………………54
3.2.2 The Surface Energy of the Truncated-hut Structures...………55
3.2.3 The Surface Energy of the Rectangular Structures…………..56
3.2.4 Discussion……………………………………………………56
3.3 The Total Energy in Simple Geometric Structures…………………..57
3.4 Discussion…………………………………………………………...59
4 The Shape Distribution of the R-type NiSi2 Clusters: The Effect of the Upper-Si-layer Thickness and Annealing on the Shape Distribution of the R-type NiSi2 Clusters………………………………………………...61
4.1 The Effect of Upper-Si-layer Thickness on the Shape Distribution of the R-type NiSi2 Clusters…………………………………………...61
4.2 The Effect of Annealing on the Shape Distribution of the R-type NiSi2 Clusters……………………………………………………...………63
Chapter 4. Conclusions………………………………………………..65

Reference……………………………………………………………….67
Tables…………………………………………………………………...73
Figures………………………………………………………………….74
Publication List……………………………………………………….149
Appendix……………………………………………………………...150

                                

1.1 G. Medeiros-Ribeiro, “Epitaxial Growth of Strained Nanocrystals”, Phys. Stat. sol. (b) 230 (2), 443 (2002).
1.2 Arvind Raviswaran, Chuan-Pu Liu, Jaichan Kim, David G. Cahill, and J. Murray Gibson, “Evolution of coherent islands during strained-layer Volmer-Weber growth of Si on Ge(111)”, Phys. Rev. B 63, 125314 (2001).
1.3 F. M. Ross, P. A. Bennett, R. M. Tromp, J. Tersoff, and M. Reuter, “Growth kinetics of CoSi2 and Ge islands observed with in situ transmission electron microscopy”, Micron 30, 21 (1999).
1.4 Nunzio Motta, “Self-asembling and ordering of Ge/Si(111) quantum dots: scanning microscopy probe studies”, J. Phys. Condens. Matter 14, 8353 (2002).
1.5 S. Y. Chen, H. C. Chen, and L. J. Chen, “Self-assembled endotaxial α-FeSi2 nanowires with length tenability mediated by a thin nitride layer on (001)Si”, Appl. Phys. Lett. 88, 193114 (2006).
1.6 V. A. Shchukin, D. Bimberg, T. P. Munt, and D. E. Jesson, “Metastability of Ultradense Arrays of Quantum Dots”, Phys. Rev. Lett. 90 (7), 076102 (2003).
1.7 Johannes V. Barth, Giovanni Costantini, and Klaus Kern, “Engineering atomic and molecular nanostructures at surfaces”, Nature 437 (29), 671 (2005).
1.8 J. –F. Lin, J. P. Bird, Z. He, P. A. Bennett, and D. J. Smith, “Signatures of quantum transport in self-assembled epitaxial nickel silicide nanowires”, Appl. Phys. Lett. 85 (2), 281 (2004).
1.9 R. Koch, “The intrinsic stress of polycrystalline and epitaxial thin metal films”, J. Phys. Condens. Matter 6, 9519 (1994).
1.10 S. Christiansen, M. Albrecht, H. P. Strunk, P. O. Hansson, and E. Bauser, “Reduced effective misfit in laterally limited structures such as epitaxial islands”, Appl. Phys. Lett. 66 (5), 574 (1995).
1.11 István Daruka, and Albert-László Barabási, “Dislocation-Free Island Formation in Heteroepitaxial Growth: A Study at Equilibrium”, Phys. Rev. Lett. 79 (19), 3708 (1997).
1.12 G. Costantini, A. Rastelli, C. Manzano, P. Acosta-Diaz, G. Katsaros, R. Songmuang, O. G. Schmidt, H. V. Känel, and K. Kern, “Pyramids and domes in the InAs/GaAs(001) and Ge/Si(001) systems”, J. Cryst. Growth 278. 38 (2005).
1.13 C. Preinesberger, S Vandré, T. Kalka, and M Dähne-Prietsch, “Formation of dysprosium silicide wires on Si(001)”, J. Phys. D: Appl. Phys. 31, L43 (1998).
1.14 Kaoru OJIMA, Masamichi YOSHIMURA, and Kazuyuki UEDA, “Structural and Electronic Properties of Barium Silicide on Si(100)”, Jpn. J. Appl. Phys. 41 (7), 4965 (2002).
1.15 Zhian He, David J. Smith, and P. A. Bennett, “Endotaxial Silicide Nanowires”, Phys. Rev. Lett. 93 (25), 256102 (2004).
1.16 J. Nogami, B. Z. Lui, M. V. Katkov, and C. Ohbuchi, “Self-assembled rare-earth silicide nanowires on Si(001)”, Phys. Rev. B 63, 233305 (2001).
1.17 Yong Chen, Douglas A. A. Ohlberg, and R. Stanley Williams, “Nanowires of four epitaxial hexagonal silicides grown on Si(001)”, J. Appl. Phys. 91 (5), 3213 (2002).
1.18 S. H. Brongersma, M. R. Castell, D. D. Perovic, and M. Zinke-Allmang, “Equilibrium shape of CoSi2 hut clusters on Si(100)”, J. Vac. Sci. Technol. B 16 (4), 2188 (1998).
1.19 C. W. Lim, I. Petrov, and J. E. Greene, “Epitaxial growth of CoSi2 on Si(001) by reactive deposition epitaxy: Island growth and coalescence”, Thin Solid Films 515, 1340 (2006).
1.20 A. Ouerghi, J. Penuelas, C. Andreazza-Vignolle, P. Andreazza, N. Bouet, and H. Estrade-Szwarckopf, “Chemical and structural aspects of CoPt silicide nanostructures growth on Si(100)”, J. Appl. Phys. 100 (12), 124310 (2006).
1.21 Zhian He, David J. Smith, and P. A. Bennett, “Endotaxial Silicide Nanowires”, Phys. Rev. Lett. 93 (25), 256102 (2004).
1.22 Gilberto Medeiros-Ribeiro, Alexander M. Bratkovski, Theodore I. Kamins, Douglas A. A. Ohlberg, and R. Stanley Williams, “Shape Transition of Germanium Nanocrystals on a silicon (001) Surface from Pyramids to Domes”, SCIENCE 279, 353 (1998).
1.23 William L. Henstrom, Chuan-Pu Liu, J. Murray Gibson, T. I. Kamins, and R. Stanley Williams, “Dome-to-pyramid shape transition in Ge/Si islands due to strain relaxation by interdiffusion”, Appl. Phys. Lett. 77 (11), 1623 (2000).
1.24 F. Montalenti, P. Raiteri, D. B. Migas, H. von Känel, A. Rastelli, C. Manzano, G. Costantini, U. Denker, O. G. Schmidt, K. Kern, and Leo Miglio, “Atomic-Scale Pathway of the Pyramid-to-Dome Transition during Ge Growth on Si(001)”, Phys. Rev. Lett. 93 (21), 216102 (2004).
1.25 I. Daruka, and J. Tersoff, “Existence of shallow facets at the base of strained epitaxial islands”, Phys. Rev. B 66, 132104 (2002).
1.26 F. M. Ross, R. M. Tromp, and M. C. Reuter, “Transition States Between Pyramids and Domes During Ge/Si Island Growth”, Science 286, 1931 (1999).
1.27 I. Daruka, J. Tersoff, and A.-L. Barabási, “Shape Transition in Growth of Strained Islands”, Phys. Rev. Lett. 82 (13), 2753 (1999).
1.28 Y.– W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, “KineticPathway in Stranski-Krastanov Growth of Ge on Si(001)”, Phys. Rev. Lett. 65 (8), 1020 (1990).
1.29 S. H. Brongersma, M. R. Castell, D. D. Perovic, and M. Zinke-Allmang, “Stress-Induced Shape Transition of CoSi2 Clusters on Si(001)”, Phys. Rev. Lett. 80 (17), 3795 (1998).
1.30 S. Y. Chen and L. J. Chen, “Nitride-mediated epitaxy of self-assembled NiSi2 nanowires on (001)Si”, Appl. Phys. Lett. 87 (25), 253111 (2005).
1.31 J. P. Gambino, and E. G. Colgan, “Silicides and ohmic contacts”, Materials Chemistry and Physics 52, 99 (1998).
1.32 J. P. Sullivan, R. T. Tung, and F. Schrey, “Control of interfacial morphology: NiSi2/Si(100)”, J. Appl. Phys. 72 (2), 478 (1992).
1.33 L. J. Chen, and K. N. Tu, “Epitaxial growth of transition-metal silicides on silicon”, Thin Solid Films 93, 135-141 (1982).
1.34 H. von Känel, “Growth and characterization of epitaxial Ni and Co silicides”, Material Science Reports 8 193-269 (1992).
1.35 R. T. Tung, “Epitaxial CoSi2 and NiSi2 thin films”, Materials Chemistry and Physics 32, 107 (1992).
1.36 R. Pretorius, C. C. Theron, A. Vantomme, and J. W. Mayer, “Compound Phase Formation in Thin Film Structures”, Critical Reviews in Solid State and Material Science 24, 1 (1991).
1.37 J. L. Batstone, J. M. Gibson, R. T. Tung, and A. F. J. Levi, “”Coreless defects” and the continuity of epitaxial NiSi2/Si(100) thin films”, Appl. Phys. Lett. 52 (10), 828 (1988).
1.38 R. T. Tung, J. M. Gibson, and J. M. Poate, “Growth of single crystal epitaxial silicides on silicon by the use of template layers”, Appl. Phys. Lett. 42 (10), 888 (1983).
1.39 Iwao Kunishima, Kyoichi Suguro, Tomonori Aoyama, and Junichi Matsunaga, “Homogeneous Heteroepitaxial NiSi2 Formation on (100)Si”, Jpn. J. Appl. Phys. 29 (12), 2329 (1990).
1.40 K. Ezoe, H. Kuriyama, T. Yamamoto, S. Ohara, S. Matsumoto, “Scanning tunneling microscopy study of initial growth of titanium silicide on Si(111)”, Applied Surface Science 130-132, 13 (1998).
1.41 B. Z. Liu, and J. Nogami, “A scanning tunneling microscopy study of dysprosium silicide nanowire growth on Si(001)” J. Appl. Phys. 93 (1), 593 (2003).
1.42 P. A. Bennett, B. Ashcroft, and Zhian He, “Growth dynamics of titanium silicide nanowires observed with low-energy electron microscopy”, J. Vac. Sci. Technol. B 20 (6), 2500 (2002).
1.43 Zhian He, M. Stevens, David J. Smith, and P. A. Bennett, “Epitaxial titanium silicide islands and nanowires”, Surface Science 524, 148 (2003).
1.44 Hung-Chang Hsu, Wen-Wei Wu, Hsun-Feng Hsu, and Lih-Juann Chen, “Growth of High-Density Titanium Silicide Nanowires in a Single Direction on a Silicon Surface”, NANO LETTERS 7 (4), 885 (2007).
1.45 S. Liang, R. Islam, David J. Smith, P. A. Bennett, J. R. O’Brien, and B. Taylor, “Magnetic iron silicide nanowires on Si(110)”, Appl. Phys. Lett. 88, 113111 (2006).
1.46 K. L. Kavanagh, M. C. Reuter, and R. M. Tromp, “High-temperature epitaxy of PtSi/Si(001)”, J. Cryst. Growth 173, 393 (1997).
1.47 J. Tersoff and R. M. Tromp, “Shape Transition in Growth of Strained Islands: Spontaneous Formation of Quantum Wires”, Phys. Rev. Lett. 70 (18), 2782 (1993).
1.48 Martin Kästner and Bert Voigtländer, “Kinetically Self-Limiting Growth of Ge Islands on Si(001)”, Phys. Rev. Lett. 82 (13), 2745 (1999).
1.49 D. E. Jesson, G. Chen, K. M. Chen, and S. J. Pennycook, “Self-Limiting Growth of Strained Faceted Islands”, Phys. Rev. Lett. 80 (23), 5156 (1998).
1.50 K. Sekar, G. Kuri, P. V. Satyam, B. Sundaravel, D. P. Mahapatra, and B. N. Dev, “Shape transition in the epitaxial growth of gold silicide in Au thin films on Si(111)”, Phys. Rev. B 51 (20), 14330 (1995).
1.51 Lena Fitting, M. C. Zeman, W.-C. Yang, and R. J. Nemanich, “Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001)”, J. Appl. Phys. 93 (7), 4180 (2003).
1.52 W.-C. Yang, H. Ade, and R. J. Nemanich, “Shape stability of TiSi2 islands on Si(111)”, J. Appl. Phys. 95 (3), 1572 (2004).
1.53 http://www.comsol.com.
1.54 Y.-L. Shen, S. Suresh, and I. A. Blech, “Stresses, curvatures, and shape changes arising from patterned lines on silicon wafers”, J. Appl. Phys. 80 (3), 1388 (1996).
1.55 I. Goldfarb, L. Banks-Sills, and R. Eliasi, “Is the Elongation of Ge Huts in the Low-Temperature Regime Governed by Kinetics?”, Phys. Rev. Lett. 97 (20), 206101 (2006).
1.56 Yee-Chia Yeo, and Jisong Sun, “Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions”, Appl. Phys. Lett. 86, 023103 (2005).
1.57 F. Jonsdottir, D. Halldorsson, G. E. Beltz, and A. E. Romanov, “Elastic fields and energies of coherent surface islands”, Modelling Simul. Mater. Sci. Eng. 14, 1167 (2006).
1.58 S. Christiansen, M. Albercht, H. P. Strunk, and H. J. Maier, “Strained state of Ge(Si) islands on Si: Finite element calculations and comparison to convergent beam electron-diffraction measurements”, Appl. Phys. Lett. 64 (26), 3617 (1994).
1.59 Seung-Hyun Rhee, Yong Du, and Paul S. Ho, “Thermal stress characteristics of Cu/oxide and Cu/low-k submicron interconnect structures”, J. Appl. Phys. 93 (7), 3926 (2003).
3.1 K. Rajan, L. M. Hsiung, J. R. Jimenez, L. J. Schowalter, K. V. Ramanathan, R. D. Thompson, and S. S. Iyer, “Microstructure stability of epitaxial CoSi2/Si (001) interfaces”, J. Appl. Phys. 70 (9), 4853 (1991).
3.2 S. M. Yalisove, R. T. Tung, and D. Loretto, “Epitaxial orientation and morphology of thin CoSi2 films grown on Si(100): Effects of growth parameters”, J. Vac. Sci. Technol. A 7 (3), 1472 (1988).
3.3 J. R. Jimenez, L. M. Hsiung, K. Rajan, L. J. Schowalter, Shin Hashimoto, R. D. Thompson, and S. S. Iyer, “Control of misoriented grains and pinholes in CoSi2 grown on Si(001)”, Appl. Phys. Lett. 57 (26), 2811 (1990).
3.4 J. R. Jimenez, L. J. Schowalter, L. M. Hsiung, K. Rajan, Shin Hashimoto, R. D. Thompson, and S. S. Iyer, “Growth of CoSi2 on Si(001): Structure, defects, and resistivity”, J. Vac. Sci. Technol. A 8 (3), 3014 (1990).
3.5 R. K. K. Chong, M. Yeadon, W. K. Choi, and C. B. Boothroyd, “Nitride-mediated epitaxy of CoSi2 on Si(001)”, Appl. Phys. Lett. 82 (12), 1833 (2003).
3.6 D. P. Adams, S. M. Yalisove, and D. J. Eaglesham, “Interfacial and surface energetics of CoSi2”, J. Appl. Phys. 76 (9), 5190 (1994).
3.7 J. P. Sullivan, R. T. Tung, and F. Schrey, “Control of interfacial morphology: NiSi2/Si(100)”, J. Appl. Phys. 72 (2), 478 (1992).
3-8 C. W. T. Bulle-Lieuwma, A. H. Van Ommen, J. Hornstra, and C. N. M. Aussems, “Observation and analysis of epitaxial growth of CoSi2 on (100) Si”, J. Appl. Phys. 71 (5), 2211 (1992).
3.9 A. Ouerghi, J. Penuelas, C. Andreazza-Vignolle, P. Andreazza, N. Bouet, and H. Estrade-Szwarckopf, “Chemical and structural aspects of CoPt silicide nanostructures growth on Si(100)”, J. Appl. Phys. 100 (12), 124310 (2006).
3.10 J. M. Gibson and J. L. Batstone, “In-Situ Transmission electron microscopy of NiSi2 Formation by Molecular Beam Epitaxy”, Surface Science 208, 317 (1989).
3.11 L. H. Wu, Y. C. Chu, and C. J. Tsai, “Tunability of the interfacial orientation of endotaxial NiSi2 on Si(001)”, to be published.
3.12 H. Yin, K. D. Hobart, F. J. Kub, S. R. Shieh, T. S. Duffy, and J. C. Sturm, “Strain partition of Si/SiGe and SiO2/SiGe on compliant substrates”,Appl. Phys. Lett. 82 (22), 3853 (2003).
3.13 V. A. Shchukin, N. N. Ledentsov, P. S. Kop’ev, and D. Bimberg, “Spontaneous Ordergin of Arrays of Coherent Strained Islands”, Phys. Rev. Lett. 75 (16), 2968 (1995).
3.14 O. E. Shklyaev, M. J. Beck, M. Asta, M. J. Miksis, and P. W. Voorhees, “Role of Strain-Dependent Surface Energies in Ge/Si(100) Island Formation”, Phys. Rev. Lett. 94, 176102(2005).
3.15 Adam Li, Feng Liu, and M. G. Lagally, “Equilibrium Shape of Two-Dimensional Islands under Stress”, Phys. Rev. Lett. 85 (9), 1922 (2000).
3.16 I. Goldfarb and G. A. D. Briggs, “Reactive deposition epitaxy of CoSi2 nanostructures on Si(001): Nucleation and growth and evolution of dots during anneal”, Phys. Rev. B 60 (7), 4800 (1999).

全文公開日期本全文未授權公開 (校內網路)
全文公開日期本全文未授權公開 (校外網路)

簡易檢索 / 詳目顯示

相關論文