本論文研究旨在探討以氫分子離子佈植技術應用於 (100)、(111) 及 (110) 晶向之鍺晶圓中，以智切法生產絕緣層上鍺過程中所展現之材料特性。本論文研究主要分為兩部分，第一部分係針對完成氫分子離子佈植後 (100)、(111) 及 (110) 晶向之鍺試片在不同溫度及持溫時間下進行熱退火處理，並且以光學顯微鏡觀測三種晶向之鍺試片在不同加熱條件的退火過程中，所引起試片表面發泡破裂情形的變化與差異，之後撘配二次離子質譜儀、穿透式電子顯微鏡等特性分析儀器，進一步探討不同晶向之鍺試片內部由氫分子離子佈值所造成之缺陷結構的演化情形，並由各項儀器的分析結果，比較出對於 (100)、(111) 及 (110) 晶向之鍺試片以智切法生產絕緣層上鍺之最佳製程條件。而第二部份則利用上述結果，以智切法之標準製程進行絕緣層上鍺的製作，再利用光學顯微鏡、原子力顯微鏡以及穿透式電子顯微鏡觀測絕緣層上鍺材料之表面形貌與粗糙度以及轉移層厚度進行分析。研究結果顯示: 在鍺試片表面引發發泡以及發泡破裂現象所需之臨界溫度受到晶向的影響而呈現 鍺 (110) > 鍺 (111) > 鍺 (100) 之順序，同時不同晶向的鍺試片在發泡以及發泡破裂的數量與平均直徑上也會有明顯的差異；此外，表面之發泡與發泡破裂現象隨退火溫度升高皆須經歷成核與成長控制兩階段，因此引發表面發泡與發泡破裂現象所需之活化能隨溫度升高而存在一明顯的轉折點。各晶向之試片在相同的條件下進行氫分子離子佈植後，氫元素在試片內部之縱深分佈以及佈植缺陷的密度與深度皆會有所不同，而缺陷結構為決定退火過程中裂縫生長之關鍵因素，同時決定了智切法所轉移絕緣層上鍺之厚度及表面粗糙度。最後，本實驗以旋塗式玻璃提高佈植片與氧化片之接合強度以完成絕緣體上鍺材料的製作，並大幅提高了鍺薄膜層之轉移面積。在低溫退火時轉移之鍺薄膜層表面粗糙度較為平整，但內部之輻射損傷情形較嚴重；而高溫退火時轉移之鍺薄膜層表面則較為粗糙。

[1] 吳志宏、劉丙寅、賴文郎、張嘉福、葉性銓，機械工業雜誌， 257 期，中華民國93年，93頁。
[2] D. Kahng, IEEE Transactions on Electron Devices, 23 (1976) 655.
[3] A. Plöbl, G. Krauter, Solid-State Electron, 44 (2000) 775.
[4] R.S. Muller, T.I. Kamins, M. Chan, Device Electronics for Integrated Circuits, 3rd Edition, Wiley, New York, (2002) 510.
[5] http://zh.wikipedia.org/zh-tw/SOI
[6] M. Bruel, Electron. Lett., 31 (1995) 1201.
[7] T. Höchbauer, “On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage”, Marburg University, Ph.D. Dissertation, 2001.
[8] L.J. Huang, Q.Y. Tong, Y.L. Chao, T.H. Lee, Appl. Phys. Lett., 74 (1999) 982.
[9] J. Grisolia, G.B. Assayag, A. Claverie, B. Aspar, C. Lagahe, L. Laanab, Appl. Phys. Lett., 76 (2000) 852.
[10] B. Aspar, M. Bruel, H. Moriceau, C. Maleville, T. Poumeyrol, A.M. Papon, Microelectronic Engineering, 36 (1997) 233.
[11] L.S. Wang, S. Tripathy, S.J. Chua, K.Y. Zhang, J. Appl. Phys., 87 (2005) 11.
[12] T. Mizuno, N. Sugiyama, T. Tezuka, Y. Moriyama, S. Nakaharai, S. Takagi., IEEE Transactions on Electron Devices, 52 (2005) 367.
[13] C.L. Blanchard, N. Sousbie, S. Sartori, H. Moriceau, A. Sousbie, B. Aspar, P. Nguyen, B. Blondeau, Proceedings of the Semiconductor Wafer Bonding VII: Science, Technology, and Application, Paris, France, 19 (2003) 346.
[14] W. Shockley, IEEE Transactions on Electron Devices, 23 (1976) 597.
[15] H.J. Woo, H.W. Choi, J.K. Kim, G.D. Kim, W. Hong, W.B. Choi, Y.H. Baec, Nucl. Instr. and Meth. B, 241 (2005) 531.
[16] P. Nguyen, I. Cayrefourcq, B. Blondeau, N. Sousbie, C. L. Blanchard, S. Sartori, A.M. Cartier, Proceedings of the 2003 IEEE Int. SOI Conf., Newport Beach, CA, 29 (2003) 132.
[17] L. Jastrzebski, J.F. Corboy, J.T. McGinn, R. Pagliaro Jr., J. Electrochem. Soc.: Solid-State Science and Technology, 130 (1983) 1571.
[18] R.P. Zingg, H.G. Graf, W. Appel, P. Vohringer, B. Hofflinger, Proceedings of IEEE SOS/SOI Wokshop, St. Simon Island, Georgia, (1988) 52.
[19] J.P. Denton, G.W. Neudeck, Proceedings of IEEE Int. SOI Conf., Tucson, Arizona, (1995) 135.
[20] J.C. Chang, J.P. Denton, G.W. Neudeck, Proceedings IEEE Int. SOI Conf., Sanibel Island, Florida, (1996) 88.
[21] M. Watanabe, A. Tooi, Japan. J. Appl. Phys., 5 (1966) 737.
[22] K. Izumi, M. Doken, H. Ariyoshi, Electron. Lett., 14 (1978) 593.
[23] S. Nakoshima, T. Katayama, Y. Miyamura, H. Matsuzaki, M. Imai, K. Izumi, N. Ohwada, Proceedings of IEEE Int. SOI Conf., Nantucket, MA, (1994) 5237.
[24] T. Yonehara, K. Sakaguchi, N. Sato, Appl. Phys. Lett., 64 (1994) 2108.
[25] Sakaguchi, Kiyofumi, Yonehara, Takao, Solid State Technology, 43 (2000) 88.
[26] K. Sakaguchi, K. Yanagita, H. Kurisu, H. Suzuki, K. Ohmi, T.Yonehara, Proceedings of IEEE Int. SOI Conf., Rohnert Park, California, (1999) 110.
[27] S. Makovejev, J.P. Raskin, M.K. Md Arshad, D. Flandre, S. Olsen, F. Andrieu, V. Kilchytska, Solid-State Electronics, 71 (2012) 93.
[28] Y. Hoshi, A. Fukumoto, K. Sawano, I. Cayrefourcq, M. Yoshimi, Y. Shiraki, Thin Solid Films, 517 (2008) 340.
[29] J.M. Zahlera, C.G Ahn, S. Zaghi, H.A. Atwater, C.Chu, P. Iles, Thin Solid Films, 404 (2002) 558.
[30] J.F. Ziegler, J.P. Biersack, U. Littmask, Stopping and Range of Ions in Solids, Pergamon Press, New York, (1985) 122.
[31] A. Benninghoven, F.G. Rudenauer, H.W. Werner, Secondary Ion Mass Spectrometry: Basic Concepts-Instrumental Aspects, Applications and Trends, John Wiley & Sons, New York, (1987) 950.
[32] 陳力俊、張立、梁鉅銘、林文台、楊哲人、鄭晃忠，材料電子顯微鏡學，國家科學委員會精密儀器發展中心，台灣，中華民國八十三年。
[33] X.B. Ma, W.L. Liu, X.F. Du, X.Y. Liu, Z.T. Song, C.L. Lin, P.K. Chu, J. Vac. Sci. Technol. B, 28 (2010) 769.
[34] I.P. Ferain, K.Y. Byun, C.A. Colinge, S. Brightup, M.S. Goorsky, J. Appl. Phys., 107 (2010) 5.
[35] M.K. Weldon, V.E. Marsico, Y.J. Chabal, A. Agarwal, D.J. Eaglesham, J. Sapjeta, W.L. Brown, D.C. Jacobson, Y. Caudano, S.B. Christman, E.E. Chaban, J. Vac. Sci. Technol. B, 15 (1997) 1065.
[36] Q.Y. Tong, K. Gutjahr, S. Hopfe, U. Gösele, T.H. Lee, Appl. Phys. Lett., 70 (1997) 1390.
[37] T.H. Lee, Q.Y. Tong, Y.L. Chao, L.J. Huang, U. Gösele, Electrochem. Soc., 97-23 (1997) 27.
[38] R. Abbaschian, L. Abbaschian, R.E. Reed-Hill, Physical Metallurgy Principles 4th Edition, Wiley, New York (2002) 17.
[39] R. Abbaschian, L. Abbaschian, R.E. Reed-Hill, Physical Metallurgy Principles 4th Edition, Wiley, New York (2002) 463.
[40] M.K. Weldon, M. Collot, Y.J. Chabal, V.C. Venezia, A. Agarwal, T.E. Haynes, D.J. Eaglesham, S.B. Christman, E.E. Chaban, Appl. Phys. Lett., 73 (1998) 3721.
[41] F.A. Reboredo, M. Ferconi, S.T. Pantelides, Phys. Rev. Lett., 82 (1999) 4870.
[42] T. Höchbauer, A. Misra, R. Verda, Y. Zheng, S.S. Lau, J.W. Mayer, M. Nastasi, Nucl. Instr. Meth. B, 175-177 (2001) 169.
[43] H. Ryssel, I. Ruge, Iom Implantation, Wiley, New York (1986) 26
[44] J.H. Liang, C.H. Hu, C.M. Lin, Surface Coatings and Technology, 206 (2011) 820.
[45] Y. Zheng, S.S. Lau, T. Höchbauer, A. Misra, R. Verda, X.M. He, M. Nastasi, J.W. Mayer, J. Appl. Phys., 89 (2001) 2972.
[46] M. Bruel, Materials Research Society Bulletin, 23 (1998) 35.