III-V族半導體是當前很重要的發光材料，而且未來仍有很大的市場潛力。本篇論文是針對III-V族半導體的GaN/InGaN、GaN/AlN量子井及GaP奈米帶以能量過濾和電子顯微技術做探討。這裡針對三個主要研究課題來進行研究：（一）退火對GaN/InGaN多層量子井微結構與發光特性之研究；（二）電子能譜影像(Electron Spectroscopy Imaging
:ESI)技術量測GaN/AlN量子井能隙分佈；（三）觀察GaP奈米帶vacancy ordering現像。
大多數的GaN系發光元件，不管是藍光發光二極體的 (Light Emitting Diode, LED)或是藍光雷射二極體(Laser Diode, LD)大都是採用量子井結構為發光層。用量子井結構的好處是可發出純度較高的光譜(半高寬較窄)、注入電流值較小、光輸出功率較高、量子效應和光學增益也較高。元件的發光效率與量子井微結構有絕對的關係，因此研究的目地是分析GaN/InGaN量子井微結構與發光特性的關係，此外退火又會造成量子井微結構之改變而影響發光特性，並且提出一個模型來連結微結構與發光特性的關係。
電子能量損失譜儀是一個很有用的分析工具，尤其是在分析材料的成分和鍵結上。半導體材料的低能電子損失能譜經過解捲可以解析出能帶能隙，同樣地，電子能譜影像(ESI)方法也可以做到相同的目的。ESI技術是能量過濾電鏡(energy-filter TEM)元素分佈的進一步應用，它是將一系列能損的能譜影像重組成電子損失能譜，但是受限於能量選擇狹縫(energy-selecting slit)重組後能譜，其能量空間點取樣不足，本研究以傅利業內插方法來解決取樣不足的問題，經過解捲亦可以解析出能隙。本方法的好處是可以作一區域的分析，而且較不會有輻射損傷的問題，缺點是能量分辨率較差。
近年來奈米材料的研究受到科學界的重視，主要是它的物理和化學性質均和塊材不太相同，也許可以做出有用的元件。而缺陷對材料而言是一個很重要的因子會影響元件的特性，雖然GaP塊材本身是間接能隙，但是常和其他同族元素混和製成三元或四元的發光元件，也是一個很重要的發光材料。GaP奈米帶是奈米材料較特別的一種形貌，只要成分、溫度和氛圍控制正確，就很容易成長。分析GaP奈米帶的電子繞射圖樣和高分辨影像，發現GaP奈米帶中存在有空缺有序化(vacancy ordering)現像，這是個有趣且新的發現。
本論文的研究主軸是建立在電子顯微鏡和電子能量過濾器的應用，研究對象為寬能隙的III-V族發光材料，研究的目的是要找出材料的微結構與其光學特性的關聯，更加瞭解材料的特性。

Recently, the III-V group semiconductors play a very important material in light emitting. These materials have great market potentials in the future. In this thesis, we study the microstructure of GaN/InGaN multiple-quantum-wells (MQWs)、GaN/AlN quantum well and GaP nano-belts using energy filter and high resolution transmission electron microscopy. Three topics in this thesis are investigated: (I) Correlation of optical properties and interfacial microstructure of InxGa1-xN/GaN MQWs; (II) Band Gap Mapping for GaN/AlN quantum well by Electron Spectroscopy Imaging (ESI) method; (III) Observation of vacancy ordering structure in GaP nanobelt.
Most devices, such as Light Emitting Diode or Laser Diode, were made using quantum well as active layer. The advantages of quantum well structure are high coherent, low inject current, high quantum effect and optical gain. The first topic is the study of the correlation of optical properties and interfacial microstructure in InxGa1-xN/GaN multiple-
quantum-wells (MQWs). The photoluminescence (PL) characteristics of MQWs can be correlated to a function of interfacial structures including the average alloy composition, width of well, interfacial roughness, compositional variation and piezoelectric strain in the MQWs. The correlation in InxGa1-xN/GaN MQWs was studied by PL spectrometry, and high-resolution transmission electron microscopy with nanoscaled composition analyses. Good agreement is obtained between the simulated PL spectra using structure-correlated parameters and the experimental ones measured by optical methods. Our result shows that intensity of photoluminescence is decreased as a result of increasing quantum well roughness and width after annealing, while annealing has a negligible effect on the full width at half maximum value of the PL peak.
The electron energy loss spectrum (EELS) is a very useful analyzing tool, especially analyzing the composition and bonding in materials. For second topic, several techniques were developed to demonstrate the possibility to map the distribution of band gap energies for GaN/AlN quantum well structures using electron spectroscopy imaging (ESI). The phase correlation function was used to register different energy loss images among ESI series with accuracy of one pixel. The energy dispersion of ESI series was improved by a FFT interpolation method. An iterative multi-variable least square algorithm was derived to refine the fitting of the single scattering distribution (SSD) to an analytic form of the density of states (DOS) function □(E)□ a(E-Eg)0.5. The inhomogeneity of the band energy of the quantum well can be revealed from the band energy map. A threshold filter method is applied to estimate the average value and standard deviation of the band-gap energy from barrier and well regions in the energy map. The average band-gap energy of AlN and GaN are determined to be 5.62 □ 0.35 eV and 3.87 □ 0.36 eV, respectively. The effect of delocalization on the accuracy of band energy determination is discussed. The 2□Eg accuracy of this analysis is comparable to half of the energy resolution of the ESI experiment.
In recent years, the research of nano-size materials is attached importance. The properties of physics and chemical are different between bulk and nano-material. The defects play an important role for device. For third topic, III-V semiconductor GaP nano-belts were successfully synthesized with Fe2O3 catalyst on Si substrate by a simple evaporation process at high temperatures. The shape of these nano-belts is typically rectangular with width ranging from 50 to 500 nanometers and lengths can be up to several hundred micrometers. The thickness varies from 10 to 35 nm. A vacancies ordering structure were observed in GaP nano-belts. The ordering structure of vacancies were analyzed using high-resolution transmission electron microscopy, electron diffraction pattern and computer simulation. In [111] projection, the structure has a 120o super-structure, while in [211] projection it has super structure in and plane. This defected structure can be envisaged in terms of long period structure (LPS) with super-structure in (111) stacking plane.

[2.1] W. C. Johnson, J. B. Parsons, and M. C. Crew, J. Phys. Chem. 36, 251 (1932).
[2.2] H. P. Maruska and J. J. Tietjen, Appl. Phys. Lett. 15, 367 (1969)
[2.3] J. I. Pankove, E. A. Miller, D. Richman and J. E. Berkeyheister, RCA Review 32, 383 (1971).
[2.4] I. Akasaki, K. Hiramatsu and H. Amano, Memoir of Faculty of Engineering, Nagoya University 43, 147 (1991).
[2.5] H. P. maruska, D. A. Stevenson and J. J. Pankove, Appl. Phys. Lett. 22, 306 (1973).
[2.6] J. I. pankove and J. A. Hutchby, J. Appl. Phys. 47, 5387 (1976).
[2.7] S. Yoshida, S. Misawa and S. Gonnda, J. Vac. Sci. Technol. B 1, 250 (1983).
[2.8] H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
[2.9] S. Nakamura, Y. Harada and M. Seno, Appl. Phys. Lett. 58, 2021(1991).
[2.10] H. Amano, M. Kitoh, K. Hiramatsu, N. Sawaki and I. Akasaki, Jpn. J. Appl. Phys. 28, L2112 (1989).
[2.11] S. Nakmura, T. Mukai, M. Senoh and N. Iwasa, Jpn. J. Appl. Phys. 31, L139 (1992).
[2.12] S. Nakamura, M. Senoh and T. Mukai, Jpn. J. Appl. Phys. Lett. 67, 1868 (1995).
[2.13] S. Nakamura, et. al, J. Appl. Phys. 35, 74 (1996).
[2.14] S. Nakamure, MRS. Bull, 22 (2), 29 (1997).
[2.15] H. P. Maruska, J. J. Tietjen. Appl. Phys. Lett. 15, 327 (1969).
[2.16] T. Detchprohm, K.Hiramatsu, K. Itoh, I.Akasaki. Jpn. J. Appl. Phys. 25, 1924 (1986).
[2.17] M. Mizuta, S. Fujieda, Y. Matsumoto and T. Kawamura, Jpn. J. Appl. Phys. 25, L945 (1986).
[2.18] M. J. Paisley, Z. Sitar, J. B. Posthill and R. F. Favis, J. Vac. Sci. Technol. A 7, 701 (1989).
[2.19] R. C. Powell, N. E. Lee, Y. W. Kim and J. E. Greene, J. Appl. Phys. 73, 189 (1993).
[2.20] V. A. Savastenko, A. U. Sheleg, Phys. Status Solidi A, 48, 135-9 (1978).
[2.21] T. Detchprohm, K. Hiramatsu, K. Itoh and I. Akasaki, Jpn. J. Appl. Phys. 31, L1454 (1992).
[2.22] H. P. Maruska and J. J. Tietjen, Appl. Phys. Lett. 15, 327 (1969).
[2.23]A. U. Sheleg, V. A. Savastenko, Vestsi Akad. Navuk BSSR Ser. Fiz.-Mat. Navuk (USSR) p.126-8 (1977).
[2.24] Thermochemical Propertis of Inorganic Substances (Springer, Berlin-Heidelberg-New York, USA, 1977)
[2.25] G. A. Slack, J. Phys. Chem. Solids 34, 330 (1977).
[2.26] J. Karpinski, S. Porowski. J. Cryst. Growth (Netherlands) 66, 11 (1984).
[2.27] J. Karpinski, J. Jun, S. Porowski. J. Cryst. Growth, 66, 1 (1984).
[2.28] E. Lashmi, B. Mathur, A. B. Bhattacharya and V. P. Bhargava, Thin Solid Films, 74, 77 (1980).
[2.29] B-C. Chung and M. Hershenzon, J. Appl. Phys. 72, 651 (1992).
[2.30] T. Lei, T. D. Moustakas, J. Appl. Phys. 71, 4933 (1992).
[2.31] H. J. Hovel, J. J. Cuomo, Appl. Phys. Lett. 20, 71 (1972).
[2.32]B. B. Kosicki, R. J. Powell, J. C. Burgiel, Phys. Rev. Lett. 24 , 1421 (1970).
[2.33]S. Bloom, G. Harbeke, E. Meier, I. B. Ortenburger, Phys. Status Solidi B, 66, 161 (1974).
[2.34] M. Lyutaya and T. Bartnitskaya. Inorg. Mater. 9, 1052 (1973).
[2.35] J. Hagan, R. Metcalfe, D. Wickenden, and W. Clark. J. Phys. C, 11, L143 (1978).
[2.36] B. Baranov, L. Daweritz, V. Gutan, G. Jungk, H. Neumann, and H. Raidt. Phys. Statu. Solidii(a) 49, 629 (1978).
[2.37]S. Yoshida, S. Misawa, and S. Gonda. J. Appl. Phys. 53, 6844 (1982).
[2.38]Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatsu, N. Sawaki, and I. Akasaki. J. Appl. Phys. 61, 4540 (1987).
[2.39]S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992).
[2.40]T. Matsuoka, H. Tanaka, T, Sasaki, and A. Katsui, Inst. Phys. Conf. Ser. 106, 141 (1989).
[2.41]M. Panish and H. Temkin, Gas Source Molecular Beam Epitaxy, Springer series in Material Science, vol.26 Springer-Verlag, Berlin (1993).
[2.42]S. Keller, B. Keller, D. Japolnek, A. Abare, H. Masui, L. Coldren, U. Mishra, and S. DenBaars, Appl. Phys. Lett. 68, 3147 (1996).
[2.43] I. Ho and G. Stringfellow, Appl. Phys. Lett. 69, 2701 (1996).
[2.44]K. Osamua, S. Naka, and Y. Murakmi, J. Appl. Phys. 46, 3432 (1975).
[2.45]T. Nagamoto, T. Kuboyama, H. Minamino, and O. Omoto, Jpn. J. Appl. Phys. 28, L1334 (1989).
[2.46] T. Mastsuoka, N. Yashimoto, T. Sasaki and A. Katsui, J. Electron. Mater. 21, 157 (1992).
[2.47] N. Yoshimoto, T. Mastsuoka, T. Sasaki and A. Katsui, Appl. Phys. Lett. 59, 2251 (1991).
[2.48]S. Nakamura and T. Mukai, Jpn. J. Appl. Phys. 31, L1457 (1992).
[2.49] L. Esakiy and R. Tsu, IBM J. Res. Develop 14, 61 (1970).
[2.50] J. P. Van der Ziel, et al. Appl. Phys. Lett. 26, 463 (1975).
[2.51] R. Castaing, L. Henry, Comptes Rendus B255, 76 (1962).
[2.52] G. Zanchi, P. J. Perez, J. Sevely, Microscopie Electronique a Haute Tension (Proc. 4 th Int. Conf. for HVEM, 1975, Toulouse), p.55
[2.53]S. Taya, Y. Taniguchi, E. Nakazawa, J. Usukur, J. Electron Microsc. 45,307 (1996).
[2.54] L. Reimer, Energy-filtering transmission electron microscopy (Springer-Verlag, New York) (1995).
[2.55] R.F. Egerton, Electron-energy loss spectroscopy in the electron microscope (Plenum Press, New York) (1996).
[2.56] F. Hofer, W. Grogger, P. Warbichler, and I. Papst, Mikrochim. Acta 132, 273 (2000).
[2.57] C. Jeanguillaume and C. Colliex, Ultramicroscopy 28, 252 (1989).
[2.58] J.A. Hunt and D.B. Williams, Ultramicroscopy 38, 47 (1991).
[2.59] G. Botton and G. L’Esperance, J. Microsc. 173, 9 (1994).
[2.60] N. Bonnet, J. Microsc. 190, 2 (1998).
[2.61] C. Jeanguillaume, P. Trebbia, and C. Colliex, Ultramicroscopy 3, 23 (1978).
[2.62]O.L. Krivanek, A.J. Gubbens, M.K. Kundmann, and G.C. Carpenter, 51st Ann. Proc. Electron Microsc. Soc. Am. (San Francisco Press, San Francisco) (1993) p.586
[2.63] H. Shuman, C.F. Chang and A.P. Somlyo, Ultramicorscopy. 19, 121 (1986).
[2.64] Crozier P A, Ultramicorscopy. 58, 157 (1995).
[2.65] J. Bentkey, E. L. Hall and E. A. Kenik, Proc. Microscopy and Microanalysis. (1995) p.268
[2.66] F. Hofer, W. Grogger, G. Kothleitnrt and P. Warbichler, Ultramicroscopy 67, 83 (1997).
[2.67] J. Mayer, U. Eigenthaler, J.M. Plitzko and F. Dettenwanger, Micron 5, 361 (1997).
[2.68]N. Bonnet, C. Coliex, C. Mory and M. Tence, Scanning Microscopy 2(Suppl.) (1988) p.351
[2.69]A. Berger, J. Mayer and H. Kohl, Ultramicroscopy 55, 101 (1994).
[2.70] F. Hofer and P. Warbichler, Ultramucroscopy 63, 21 (1996).
[2.71] P.A. Crozier and R.F. Egerton, Ultramicroscopy 27, 9 (1988).
[2.72] D.B. Williams and C.B. Carter, Transmission Electron Microscopy (Plenum Press. New York & London) (1996).
[2.73] T. Malis, S. Cheng and R.F. Egerton, J. Electron. Microsc. Tech. 8, 8471 (1988).
[2.74] F. Hofer, W. Grogger and P. Warbichler, Ultramircoscop 59, 15 (1995).
[2.75] W. Jager and J. Mayer, Ultramicroscopy, 38, 47 (1995).
[2.76]M. Schenner, M. Nelhiebel and P. Schattschneider, Ultramicroscopy. 65, 95 (1996).
[2.77] J. L. Lavergne, J. M. Martin and M. Belin, Microsc. Microanal. Microstruct. 3,517 (1992).
[2.78] H. Shuman, C. F. Chang and A. P. Somlyo, Ultramicorscopy. 19, 121 (1986).
[2.79] J. Mayer, U. Eigenthaler, J.M. Plitzko and F. Dettenwanger, Micron 5,361 (1997).
[2.80] L. Ponsonnet, B. Vacher and J.M. Martin, Thin Solid Films 324, 170 (1998).
[2.81] J. M. Plitzko and J. Mayer, Ultramicroscopy, 78, 207 (1999).
[2.82] P. J. Thomas and P. A. Midgley, Ultramicroscopy, 88, 179 (2001).
[2.83]P. J. Thomas and P. A. Midgley, Ultramicroscopy, 88, 187 (2001).
[2.84]C. Quintana, J. P. Lechaire, N. Bonnet, C. Risco and J. L. Carrascosa, Microscopy Research and Technique 53, 147 (2001).
[2.85] S. C. Lo, J. J. Kai, F. R. Chen, L. C. Chen, L. Chang, C. C. Chang, P. J. Ding, B. Chin, H. Zhang and F. S. Chen, J. Electron Microsc. 50, 497 (2001).
[2.86] J. Y. Yang, F. R. Chen and J. J. Kai, J. Electron Microsc. 51, 391 (2002).
[2.87] P. E. Batson, K. L. Kavanagh, J. M. Woodall, and J. W. Mayer, Phys. Rev. Lett. 57, 2729 (1986).
[2.88] B. Rafferty, and L. M. Brown, Phys. Rev. B, 58, 10326 (1998).
[2.89]U. Bangert, A. J. Harvey, and R. Keyse, Ultramicroscopy 68, 173 (1997).
[2.90] Bruley J and Brown L M (1987) Analytical Electron Microscopy Workshop, Proceedings, edited by G. W. Lorimer (The Institute of Metals, London, 1988)

[3.1] D. B. Williams and C. B. Cater, in Transmission Electron Microscopy, (Plenum, New York, 1996), Ch. 33- 35
[3.2] R. Castaing (1951) Thesis, University of Paris, ONERA Publication, #55.
[3.3] G. Cliff and G. W.Lorimer, J. Microsc. 103, 203 (1975)
[3.4] D. B. Williams and C. B. Cater, in Transmission Electron Microscopy, (Plenum, New York, 1996), Ch. 37- 40
[3.5] C. Deininger, R. F. Egerton, F. Hofer, B. Jouffrey, D. Krahl, R. D. Leapman, J. Mayer, L. Reimer, H. Rose, P. Schattschneider, and J. C. H. Spence, in Energy-Filter Transmission Electron Microscopy, edited by L. Reimer (Springer, New York, 1955) p.347-393
[3.6] O. L. Krivanek, M. K. Kundmann and K. Kimoto, J. Microsc. 180, 277 (1995)
[3.7] Gonzalez Rafael G. and Woods R E, Digital Image Processing, (ddison-Wesley Publishing Company, 1992) p109
[3.8] Kuglin C D, Hines D C, Proceedings of the IEEE International Conference on Cybernetics and Society (1975), p. 163.
[3.9] D. Fraser, IEEE Trans. Acoust., Speech, Singnal Processing 37(5) (1989) p.665
[3.10] R.W. Schafer and L.R. Rabiner, Proc. IEEE 61 (1973) p.691
[3.11] J. Mayer, U. Eigenthaler, J.M. Plitzko, and F. Dettenwanger, Micron 5 (1997) p.361
[3.12] J. Bruley and L.M. Brown, Analytical Electron Microscopy Workshop, 1987 Proceedings, edited by G.W. Lorimer (The Institute of Metals. London, 1988)
[3.13 ]K. C. Zeng et. al. Appl. Phys. Lett. 73, 1724 (1998)

[4.1] P. Bayle-Guillemaud, A K Petford-Long, T C Anthony and J A Brug, IEEE Trans. Magn. 32, 4627 (1996)
[4.2] DTSA: Desk Top Spectrum Analyzer and X-Ray Data Base, software developed by National Institute of Standards and Technology.
[4.3] S. J. B Reed, Ultramicroscopy 7, 405 (1982)
[4.4] David B. Williams and C. Barry Carter, Transmission Electron Microscopy, chapter 39 (1996 Plenum Press, New York)
[4.5] J. Phys: condens. Matter 14, 11097 (2002)
[4.6] S. Nakamura, J. Vac. Sci. Technol. A 13, 705 (1995)
[4.7] A. Dmitriev and A. Oruzheinikov, Internat. Symp. on Blue Laser and Light Emitting Diodes (1996) p.360
[4.8] Quantum Physics, ed. Robert Eisberg and Robert Resnick
[4.9] Properties of Group III Nitrides, ed. J. H. Edgar, INSPEC, IEE, London, UK(1994)
[4.10] B.K. Meyer, D. Volm, A.Graber, H. C. Alt, T. Detchprohm, A. Amano and Akasaki, Solid State Comm. 95, 597 (1995)
[4.11]Group III Nitride Semiconductor Compounds Physics and Applications, ed. Bernard Gil, Clarendon Press, Oxford (1998) p52.
[4.12] B. Zhao and A. Yariv, in: Eli Kapon (Ed), Semiconductor laser I, (Academic press, 1999), p. 36.
[4.13]I. Vurgaftman, J.R. Meyer and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001)
[4.14]Tetsuya Takeuchi et. al. Appl. Phys. Lett. 73, 1691 (1998)
[4.15]Optical Semiconductor Devices, ed. Mitsuo Fukuda, John Wiley & Sons, INC (1999) New York
[4.16] B. Monermar and G. Pozina, Progress in Quantum Electronic 24 , 239 (2000)
[4.17]Physics of Optoelectronic Devices, ed S. L. Chuang, chapter 3.5, John Wiley & Sons, INC (1995) New York
[4.18] M. E. Aumer, S. F. LeBoeuf, B. F. Moody, and S. M. Bedair, Appl. Phys. Lett. 79, 3803 (2001)
[5.1] M. Khan, J. Kuznia, D. Olson, T. George and W. Pike, Appl. Phys. Lett. 63, 3470 (1993)
[5.2] R. F. Egerton, Electron Energy-Loss Spectroscopy in the Electron Microscopy. (Plenum Press, New York, 1996) pp.151-154
[5.3] I. Alexandrou, A.J. Papworth, B. Rafferty, G.A.J. Amaratunga, C.J. Kiely and L.M. Brown, Ultramicroscopy, 90, 39 (2001)
[5.4] P. E. Batson, K. L. Kavanagh, J. M. Woodall and J. W. Mayer, Phys. Rev. Lett. 24, 2729 (1986)
[5.5] C. G. Olson and D. W. Lynch, Phys. Rev. B 24, 4629 (1981)
[5.6] J. Hedman and N. Martensson, Phys. Scripta 22, 176 (1980)
[5.7] G. Brockt and H. Lakner, Micron 31, 435 (2000).
[5.8] O. L. Krivanek, M. K. Kundmann and K. Kimoto, J. Microsc. 180, 277 (1995)
[5.9] R. F. Egerton and P. A. Crozier, Micron 28, 117-124(1997)
[5.10] M. Schenner, M. Nelhiebel and P. Schattschneider, Ultramicroscopy 65, 95-99 (1996).
[5.11] 電子衍射物理教程,王蓉,冶金工業出版社(2002)北京
[5.12] P.C.Tiemeijer et al., Microsc.Microanal. 7, 1130(2001)
[5.13] Mitsuo Fukuda, Optical Semiconductor Devices. (John Wiley & Sonc, INC. New York, 1999) p.85

[6.1] A. Thess, et. al. Science 483,271 (1999).
[6.2] W. Han, S. Fan, Q. Li and Y. Hu, Science 277, 1287 (1997).
[6.3]T. J. Trentler, K. M. Hickman, S. C. Goel, A. M. Viano, P. C. Gibbons and W. E. Buhro, Science 270, 1791 (1995).
[6.4] C. R. Martin, Science 266, 1961 (1994).
[6.5] Li D X, Ping D H, Ye H Q, et al, Phils. Mag. Lett. 2, 53 (1993)
[6.6] S. M. Sze, Physics of Semiconductor Devices, 2nd ed.
(wiley, New York, 1981) Chap. 12.3.
[6.7] M. R. Lorenz, G. D. Pettit, and R. C. Taylor, Phys. Rev. 171, 876 (1968)
[6.8] R. G. Humphreys, U. Roぴssler, and M. Cardona, Phys. Rev. B 18, 5590 (1978)
[6.9] H. W. Seo, et. al. Appl. Phys. Lett. 82, 3752 (2003)
[6.10] Handbook Series on Semiconductor Parameters, edited by M. Levinshtein, S. Rumyantsev, and M. Shur, (World Scientific, Singapore, 1996), Vols. 1 and 2.
[6.11] C. Yeh, Z. W. Lu, S. Froyen and A. Zunger, Physic Review, Serie 3, PRBMD 46, ISSUE 16, P. 10086 (1992)
[6.12] T. L. Lee, L. J. Chen, and F. R. Chen, J. Appl. Phys. 71, 3307 (1992)
[6.13] R. Sato and H. Doi, Acta Crystallogr. 14, 763 (1961)
[6.14] Billingham, P. S. Bell, and M. H. Lewis, Philos. Mag. 25, 661 (1971)
[6.15] R. H. J. Hannink, M. J. Murray, and M. E. Packer, Philos. Mag. 24, 1179 (1971)
[6.16] D. Cherns, Philos. Mag. 30, 549 (1974)
[6.17] D. B. Holt, J. materials science 19, 439 (1984)
[6.18]J. M. Cowley and A. F. Moodie, J. Phys. Soc. Japan 17 (B II), 86 (1962)
[6.19] J. M. Cowley and A. F. Moodie, Acta Crystallogr. 10, 609 (1957)
[6.20] X. Duan and C. M. Lieber, Adv. Mater. 12, 298 (2000).
[6.21] T. L. Lee, L. J. Chen and F. R. Chen, J. Appl. Phys. 71, 3307 (1992).
[6.22] M. H. Lewis and J. Billingham, Philos. Mag. 29, 241 ( 1974).
[6.23]R. H. J. Hannink, M. J. Murray and M. E. Packer, Phil. Mag. 24, 1179 (1971).