本研究利用TSMC 0.35μm Mixed Signal 2P4M Polycide標準製程平台，結合金屬濕蝕刻的後製程及高分子真空氣相沉積技術，設計與製造出CMOS-MEMS電容式高度感測器作為低壓檢測之應用，並設計其感測壓力為一大氣壓以下和最小感測能力為100Pa之變化，此物理量為一般海平面以上之壓力範圍並希望能運用於高度之檢測。本論文提出(1)高度感測器其參考腔體塗佈上聚對二甲苯薄膜和(2)感測薄膜有較大的預變形使其縮小感測間距，期望提升薄膜之感測能力和解析度，最後歸納出感測元件之性能，以達到高解析度之感測能力。

This study presents CMOS-MEMS capacitive type altimeter with low pressure application. The sensing range is defined below 101.32kPa for detecting low pressure change (about 100Pa). The altimeter containing a reference pressure chamber coated around with parylene-C film and a larger pre-deformation to improve sensitivity and resolution. In application, the altimeter have been designed and implemented by using TSMC 0.35mm 2P4M CMOS fabrication process, and easy post-CMOS process.

[1] Nintendo, http://www.nintendo.tw/
[2] iphone, http://www.apple.com/iphone/
[3] Texas Intruments, Inc., http://www.dlp.com/tech/
[4] J. M. Bustillo, R. T. Howe, and R. S. Muller, “Surface micromachining for microelectromechanical systems,” Proceedings of the IEEE, 86, pp.1552-1574, 1998.
[5] R. T. Howe, “Surface micromachining for microsensors and microactuators,” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 6, pp.1809-1813, 1988.
[6] G. T. A. Kovacs, N. I. Maluf, and K. E. Petersen, “Bulk micromachining of silicon,” Proceedings of the IEEE, 86, pp.1536-1551, 1998.
[7] H. Baltes, O. Brand, A. Hierlemann, D. Lange, and C. Haleitner, “CMOS-present and future,” IEEE International Conference on Micro Electro Mechanical System, Las Vegas, NV., Jan., 2002, pp. 459-466.
[8] G. Lammel, J. Gutmann, L. Marti, and M. Dobler, “Indoor Navigation with MEMS sensors,” Procedia Chemistry, 1, pp.532-535, 2009.
[9] Yole Development, http://www.yole.fr/
[10] D.A. Gee, K.E Peterson, and G.T.A. Lovacs, “MEMS in the Medical Industry,” Sensor Expo Proceeding, Spring, Anaheim, California, USA, April, 1996, pp. 161-163.
[11] H. Baltes, O. Brand, G. K. Fedder, C. Hierold, J. Korvink, and O. Tabata, CMOS MEMS: Advanced Micro and Nanosystems. Vol. 2, Weinheim, Germany, John Wiley & Sons Inc, 2005.
[12] G. K. Fedder, “CMOS-based sensors,” IEEE Sensors Conference, Irvine, CA, Oct., 2005, pp. 125-128.
[13] ANALOG DEVICE, http://www.analog.com
[14] C. Ravariu, F. Ravariu, D. Dobrescu, L. Dobrescu, C. Codreanu, and M. Avram, “A designing roule for a pressure sensor with PZT layer,” Semiconductor Conference, Sinaia, Romania, Oct., 2001, pp. 379-382.
[15] C. S. Smith, “Piezoresistance effect in germanium and silicon,” Phys. Rev, 94, pp. 42-49, 1954.
[16] A. Gieles, “Submmiature silicon pressure transducers,” Solid-State Circuits Conference, Philadelphia, PA , USA, Feb., 1969 , pp. 108-109.
[17] M. Eickhoff, “A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates,” Sensors and Actuators A: Physical, 74, pp. 56-59, 1999.
[18] J. Chiou, “Simulations for thermal warpage and pressure nonlinearity of monolithic CMOS pressure sensors,” IEEE Transactions on Advanced Packaging, 26, pp. 327-333, 2003.
[19] J. Albert Chiou and S. Chen, “Pressure nonlinearity of micromachined piezoresistive pressure sensors with thin diaphragms under high residual stresses,” Sensors and Actuators A: Physical, 147, pp. 332-339, 2008.
[20] P. Universtiy, “Residual stress induced deformation of bilayer plate with patterned additional layer,” International Conference on Intelligent Mechatronics and Automation Proceedings., China, Aug., 2004, pp. 288-292.
[21] S.K. Clark and K.D. Wise, “Pressure sensitivity in anisotropically etched thin-diaphragm pressure sensors,” IEEE Transactions on Electron Devices, 26, pp. 1887-1896, 1979.
[22] W.P. Eaton and J.H. Smith, “Micromachined pressure sensors: review and recent developments,” Smart Master., Struct. 6, pp. 530-539, 1997.
[23] H.-J. Timme, D. Draxelmayr, C. Hierold,S. Kolb, D. Maier-Schneider, E.Pettenpaul, T. Scheiter, M. Steger, W.Werner, Monolithic pressure sensor microsystems, in Proc. 8th Int. Congress onSensors, Transducers, and Systems, Nurnberg; 1997, pp65–70.
[24] A. V. Chavan, and K. D. Wise, “A monolithic fully-integrated vacuum-sealed CMOS pressure sensor,” IEEE Trans. on Electron Devices, vol. 49, pp. 164-169, 2002.
[25] C.-M. Sun, C. Wang; M.-H. Tsai, H.-S. Hsie, and W. Fang, “A novel double-side CMOS-MEMS post processing for monolithic sensor integration,” IEEE International Conference on Micro Electro Mechanical Systems, Tucson, Arizona, USA, Jan., 2008, pp.90-93.
[26] F. Rudolf, and H. de Lambilly, “Low Cost Pressure Sensor Microsystems,” Proc. 4th Int. Conf. on Micro Opto Mechanical Systems, Berlin, Germany, Oct., 1994, pp. 703-711.
[27] D. Goustouridis, , “A Miniature Self-Aligned Pressure Sensing Element,” J. Micromech. Microeng., 6, 1996, pp. 33-35.
[28] Y. S. Lee, and K. D. Wise, “A Batch Fabricated Silicon Capacitive Pressure Transducer with Low Temperature Sensitivity,” IEEE Trans. Electron Devices, 29, January 1982, pp. 42–48.
[29] H. Guckel, “Silicon Microsensors: Construction, Design and Performance,” Microlectronic Engineering, 15, 1991, pp. 387-398.
[30] P.-K Tang, P.-H Wang, M-.L Li and Michael S-C Lu, “Design and characterization of the immersion-type capacitive ultrasonic sensors fabricated in a CMOS process,” J. Micromech. Microeng., 21, 2011, 025013.
[31] S. Sugiyams, T. Suzuki, K. Kawahata, K. Shimaoka, M. Takigawa and I. Igarashi, “Micro-Diaphragm Pressure Sensor,” Proc. IEEE IEDM, Los Angeles, CA, 1986, pp. 184–187.
[32] C.-L. Dai, P.-W. Lu, C.-C. Wu, C. Chang, “Fabrication of wireless micro pressure sensor using the CMOS process,” Sensors, 9, pp. 8748-8760, 2009.
[33] CIC, http://www.cic.org.tw
[34] BOSCH BMP085 datasheet
[35] IRVINE SENSORS MS3110 IC
[36] C.-T. Ko, S.-H. Tseng, and M.S.-C. Lu, “A CMOS Micromachined Capacitive Tactile Sensor with High frequency Output,” J. Microelectromech. Syst., 15, pp.1708-1714, 2006.
[37] D.C. Catling, “High-sensitivity silicon capacitive sensors for measuring medium-vacuum gas pressures,” Sensors and Actuators A: Physical, 64, pp. 157-164, 1998.
[38] J. A. Thorton, and D. W. Hoffman, “Stress related effects in thin films,” Thin Solid Films, 171, pp.5, 1989.
[39] XBP Corp, http://www.davidlu.net/dimer.htm
[40] 林立元, “穿戴式撓性感測器之研發 ,”國立清華大學動力機械研究所碩士論文, 2009.
[41] D.-W. Lee, and Y.-S. Choi, “A novel pressure sensor with a PDMS diaphragm,” Microelectronic Engineering, 85, May-June 2008, pp 1054-1058.
[42] 鄭惟仁, “壓阻式低壓壓力感測器之設計與製造 ,”國立清華大學動力機械研究所碩士論文, 2010.
[43] H. Sandmaier and K. Kuhl, “A square-diaphragm piezoresistive pressure sensor with a rectangular central boss for low-pressure ranges,” IEEE Transactions on Electron Devices, 40, pp. 1754 -1759, 1993.
[44] R. Briegel, M. Ashauer, H.Ashauer, H. Sandmaier, and W. Lang, “Anisotropic conductive adhesion of microsensors applied in the instance of a low pressure sensor,” Sensors and Actuators A: Physical, 64, pp. 323-328, 2002.
[45] C.-M. Lin, L.-Y. Lin, and W. Fang, “Monolithic integration of carbon nanotubes based physical sensors,” 23th IEEE International Conference on Micro Electro Mechanical Systems, Hong Kong, China, Jan., 2010, pp.55-58.
[46] M. Strasser, R. Aigner, C. Lauterbach, T.F. Sturm, M. Franosch, and G.Wachutka, “Micromachined CMOS thermoelectric generators as on-chip power supply ,” Sensors and Actuators A: Physical, 114, pp.362-370, 2004.