奈米金屬陣列之製作及轉印至parylene-C/polyimide藉由奈米熱壓印的方式

簡易檢索 / 詳目顯示

回結果列表

研究生：	鄭禮偉 Cheng, Li-Wei
論文名稱：	奈米金屬陣列之製作及轉印至parylene-C/polyimide藉由奈米熱壓印的方式 Fabrication of Metal Nano-Array and Transfer on Parylene-C/Polyimide by Hot-Embossing Nanoimprint
指導教授：	葉鳳生 Yeh, Fon-Shan
口試委員:
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering
論文出版年：	2009
畢業學年度：	97
語文別：	中文
論文頁數：	76
中文關鍵詞：	奈米壓印、奈米粒子陣列、軟性電子
相關次數：	點閱：2 下載：0
分享至:	分享至facebook 分享至twitter

查詢本校圖書館目錄查詢臺灣博碩士論文知識加值系統勘誤回報

摘要

本論文主要分為兩部份，一為使用電子束微影技術配合置換方法置換出奈米銅(金)點陣列，並利用熱壓式奈米壓印將其轉印在Parylene C/Polyimide 軟板上。另一實驗為藉由UV奈米壓印微影技術配合置換方式製作奈米金線。
第一部份，使用電子束微影在α-Si(400Å)/Si3N4(500Å)/Si曝出奈米孔洞陣列。在不同曝光劑量6~7μC/cm2下，預計得到的孔洞/間距為80/120nm的奈米孔洞陣列。以置換的方式製作銅(金)粒子陣列，置換液以硫酸銅(四氯化金酸)搭配HF。再以100~150℃的壓印溫度與250~400N/cm2的壓印壓力找到其壓印最好條件，將銅(金)奈米粒子陣列轉印在Parylene C/Polyimide 軟板上。最後，找到脫模的方法完成此銅(金)粒子轉印。以SEM觀察奈米孔洞、奈米金屬點以及壓印結果。
第二部份，利用UV-NIL技術在α-Si(400Å)/Si3N4(500Å)/Si製作出奈米溝槽。UV曝光劑量為250mJ/cm2下得到寬150nm、深225nm的奈米溝槽。置換液為四氯化金酸配HF，置換出奈米金線。以SEM觀察奈米溝槽、金奈米線結果，更進一步Auger mapping，發現置換液會蝕刻我們的光阻PAK-01-200，此部份待尋解決之道。

Abstract

This paper is divided into two part, one for metal nanoparticle arrays were fabricated by E-Beam lithography and immersion plating, and transferred onto parylene C/polyimide by hot-embossing nanoimprint. Another experiment, Gold nanowires were fabricated by UV nanoimprint lithography and immersion plating.
The first part, nano-hole arrays was defined by E-beam lithography on α-Si(400Å)/Si3N4(500Å)/Si. The hole/spacing is expected to be the 80/120nm under different exposure doses of 6 ~ 7μC/cm2. And the metal nanoparticle arrays were formed by replacement method. The plating solution were CuSO4 or HAuCl4 with HF. The metal nanoparticle arrays were transferred onto parylene/polyimide substrate with the imprinting pressure 250~400N/cm2 and imprinting temperature 100~150℃. So the optimal imprint and demold can be found. The nano-array pattern, metal nanoparticle arrays, and imprinting results were observed by SEM.
The second part, the nano trench was defined by UV-NIL technology on α-Si(400Å)/Si3N4(500Å)/Si. Under the UV exposure dose 250mJ/cm2, we can obtain nano-trench with 150nm width, 225nm depth. The immersion plating solution was mixture solution of HAuCl4 with HF. The nano-trench and gold nanowires were examined by SEM. Further more, in Auger mapping, we found the photoresist PAK-01-200 was etched by replacement solution. This problem can be solved by choosing right solution.

目  錄
第一章    緒論........................................................................................................................1
第二章    奈米壓印技術...........................................................................................4
2-1 熱壓成型奈米壓印.......................................................................................4
  2-1-1 模具(非晶矽/氮化矽/矽)材料............................................................6
  2-1-2 阻劑(Parylene C)材料..............................................................................7
  2-1-3 基板(Polyimide)材料................................................................................9
2-2 紫外照光硬化成型奈米壓印............................................................11
  2-2-1 模具(HSQ)材料..........................................................................................13
  2-2-2 阻劑(PAK-01-200)材料.........................................................................18
  2-2-3 基板(非晶矽/氮化矽/矽)材料...........................................................19

第三章    金導線與銅粒子陣列成型......................................................20
    3-1 電子束微影..........................................................................................................20
        3-1-1 電子束鄰近效應.....................................................................................21
        3-1-2 充電效應.....................................................................................................24
        3-1-3 碳六十介紹................................................................................................24
    3-2 置換原理................................................................................................................26
        3-2-1 矽-金、矽-銅屬置換基本機制....................................................26
       3-2-2 矽-金、矽-銅置換溶液的組成....................................................28
第四章 實驗
4-1利用熱壓式奈米壓印轉印銅粒子陣列至        Parylene C/Polyimide軟板............................................................................29
     4-1-1模具製作...............................................................................................................31
       4-1-1-1 奈米孔洞陣列的製作........................................................................31
          4-1-1-1-1不同曝光劑量.........................................................................................32
          4-1-1-1-2不同顯影濃度與時間...........................................................................33
       4-1-1-2 矽-銅置換..................................................................................................33
4-1-2 軟板製備.................................................................................................................34
4-1-2 PI基板的清洗........................................................................................................34
4-1-2-2 Parylene C沉積..................................................................................................35
    4-1-3 熱壓式奈米壓印 (Hot embossing nanoimprint). .........................36

4-2 利用紫外光硬化成形奈米壓印製作奈米金導線陣列.........37
      4-2-1 UV-NIL模具製作.........................................................................................39
      4-2-2 奈米溝槽的製備...........................................................................................40
      4-2-3 矽-金置換..........................................................................................................41
      4-2-4 去除光阻..........................................................................................................42
第五章 結果與討論
   5-1利用熱壓式奈米壓印轉印銅粒子陣列至        Parylene C/Polyimide軟板........................................................................43
     5-1-1奈米孔洞陣列量測........................................................................................43
       5-1-1-1不同曝光劑量.................................................................................................43
       5-1-1-2顯影不同濃度及時間之比較....................................................................47
     5-1-2 矽-銅置換............................................................................................................47
       5-1-2-1 光阻去除前.....................................................................................................49
       5-1-2-2光阻去除後量測............................................................................................55
     5-1-3 熱壓式奈米壓印.............................................................................................61
   5-2  UV-NIL方式製作奈米金導線..........................................................70
      5-2-1 壓印後無殘留層之金線製作...............................................................70
5-2-2 壓印後有殘留層之金線製作...............................................................72
      5-2-3 金線之材料分析...........................................................................................73
第六章 結論..........................................................................................................................75
參考文獻...........................................................................................................................................77

                                

參考文獻
[1] Qiangfei Xia and Stephen Y Chou, Nanotechnology 20 (2009) 285310
[2]羅億承, “銅奈米導線嵌入在可繞式基板的研究”,國立清華大學電子工程研究所碩士論文(2006)
[3] M. Colburn, et al., "Step-and-flash Imprint Lithography: ANew Approach to High Resolution Patterning," Proc. of SPIE, Vol.3676, pp.379, 1999.
[4] D.P. Mancini, K.A. Gehoski, E. Ainley, et al, “Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates” J. Vac. Sci. Technol. B20(6),2002
[5] H. Schmitt,a_ L. Frey,b_,c_ and H. Rysselb_” UV nanoimprint materials: Surface energies, residual layers,and imprint quality” J. Vac. Sci. Technol. B 25„3…, May/Jun 2007
[6] Atsushi Sekiguchi, Yoshiyuki Kono and Yoshihiko Hirai, ”Study on polymer Materials Evalution System for Nano-Imprint Lithography” , Journal of Phtopolymer Science and Technology V.18 NO.4 (2005)
[7] Chen-Liang Liao, Nian-Huei Chen, Henry J.H.Chen, and Fon-Shan Huang, “Fabrication of High Aspect Ratio Template for Step And Flash Imprint”, Nanoimprint and Nanoprint. Technology 2006, San Francisco, Ca., U.S.A
[8] T. Nishino, M. Meguro, K. Nakamae, M. Matsushita, and Y, Ueda, Langmuir 15, 4321(1999)
[9] A. N. Broers, in Proc. Of 1st Internat’l Conf. On Electron and Ion Beam Science and Technology, edited by R. Bakish ,Wiley, New York, , p.191, 1964.
[10] A. N Broers, W. W. Molzen, J. J. Cuomo, and N. D. Wittels, Appl. Phys. Lett. 29, p.596 ,1997.

全文公開日期本全文未授權公開 (校內網路)
全文公開日期本全文未授權公開 (校外網路)

簡易檢索 / 詳目顯示

相關論文