本論文主要研究目的係以輻射引發合金元素偏析(RIS)的理論模式為基礎，發展一套高溫離子佈植理論模式，並以72 keV銅鎳離子佈植系統的實驗數據，以及參考銅鎳合金的RIS參數，進行一系列理論模擬與實驗數據之比較研究，藉以獲得一組最佳銅鎳離子佈植系統的理論模式參數，用以探討銅鎳離子佈植系統的溫度與輻射效應，解決以往高溫離子佈植理論模式因欠缺完整的理論模式參數，以致無法進行理論與實驗比較研究的問題。在理論模式中，佈植離子與點缺陷作用所產生的輻射增強擴散(RED)與輻射引發偏析(RIS)效應，係以一組聯立方程式來描述，而有關晶格擴大效應、優先濺射效應、離子佈植引發差排效應、靶面為完美缺陷陷阱因素，以及空間非均勻性的點缺陷產生率與離子佈植率等等所造成之影響均納入考量。實驗方面，使用清大NEC 9SDH-2 3MV 串級加速器進行72 keV銅離子(5□1015及1□1017 Cu-1 /cm2)佈植鎳靶材與72 keV鎳離子(5□1015 Ni-1/cm2)佈植銅靶材等高溫(200、400及500 □C)離子佈植實驗，並利用二次離子質譜儀來量測佈植離子的縱深分佈。理論模式所需銅鎳離子佈植系統的熱力學參數，則分別以W. Wagner等人[62]及S.H. Han等人[53]所發表的三種銅鎳合金(Ni-10 at. % Cu、Ni-25 at. % Cu及Ni-60 at. % Cu)的RIS參數為基礎，進行一系列理論模擬與實驗數據之比較研究。研究結果發現：由於高溫離子佈植過程中，佈植離子與輻射損傷同時受其位置梯度分佈影響，致使佈植離子的RIS及RED等效應，較一般使用輻射(例如重離子等)照射銅鎳合金所產生的RIS及RED等效應為強；是以，若以輻射照射銅鎳合金所獲得RIS熱力學參數，直接套用於高溫離子佈植理論模式使用，將導致理論模擬結果偏離實驗數據。惟若經由合理調整空缺與填隙原子的再結合率(recombination rate)，以降低有效點缺陷產生率，便可將銅鎳合金的RIS熱力學參數套用於高溫離子佈植模式中使用，使理論與實驗結果趨於一致。同時發現以Ni-60 at. % Cu的RIS熱力學參數為基礎的高溫離子佈植理論模式參數，不論佈植劑量之多寡，理論模擬與實驗結果均相當一致。72 keV銅離子佈植鎳靶材的縱深分佈隨靶材溫度增高而明顯展寬，導致靶面銅離子空乏而往靶內擴散現象；而72 keV鎳離子佈植銅靶材之縱深分佈則隨靶材溫度增高而明顯聚集於靶面並往靶內擴散。由此足以證明，高溫離子佈植之輻射效應(RED及RIS)對佈植離子縱深分佈的影響扮演著極為重要的角色。

The purpose of this study is to experimentally and theoretically investigate the effects of the implant depth profiles on the high temperature ion implantation. In our theoretical modeling, the implanted ions can interact with implantation-production point defects and with extended sinks such as target surface and dislocations. The synthetic effects of radiation enhanced diffusion, radiation induced segregation, and spatially non-uniform point defect production rate were taken into account and cast into a set of coupled partial-differential equations. The effects of preferential sputtering and lattice dilation were also incorporated into the model through an appropriate coordinate transformation. In the experiment, a tandem accelerator was used for implanting 72 keV Cu-1 ions (5□1015 and 1□1017 Cu-1 ions/cm2) into pure nickel target and implanting 72 keV Ni ions (5□1015 Ni-1 ions/cm2) into pure copper target at elevated temperatures (200.400 and 500 □C). The depth profiles of the implanted ions were measured by secondary ion mass spectrometer. The results demonstrated that the theoretical predictions are in good agreement qualitatively with measured ones, and a set of the best-fit parameters for the theoretical model of Cu-Ni implantation system is obtained. In the 72 keV Cu-1 ions implanted into pure nickel materials, the copper depth profiles are broadened with the increase of the implanted fluence and target temperature. In the 72 keV Ni-1 ions implanted into pure copper materials, the nickel depth profiles tend to broaden and surface concentration increase with temperatures. These effects are mainly due to radiation enhanced diffusion and radiation induced solute segregation to the free surface, which are attributed to the point defects generated during ion implantation at elevated temperatures.

[1] A.D. Marwick and R.C. Piller, Rad. Eff. 47 (1980) 195.
[2] R.E.J. Watkins, Rad. Eff. 84 (1985) 27.
[3] R. Schork, P. Pichler, A. KLUGE, and H. Ryssel, Nucl. Instr. and Meth. B59/60(1991)499.
[4] G.. Dearnaley, Rad. Eff.63(1982)25.
[5] R. W.ei, P.J. Wilbur. O. Ozturk, and D.L. Williamson. Nucl. Instr. And Meth. B59/60 (1991) 731.
[6] D.L. Williamson, O. Ozturk, S. Glick, R. Wei, and P.J. Wilbur, Nucl. Instr. And Meth., B59/60 (1991) 737.
[7] Y. Miyagawa, M Ikeyama, K. Saitoh, S. Nakao, and S. Miyagawa, Surf. Coat. Technol., 83 (1996) 275.
[8] J.K. Hirvonen and C.R. Clayton, in “surface modification and alloying,” NATO Series on Materials Science, edited by J.M. Poate, G. Foti, and D.C. Jacobson (Plenum, New York, 1983), p323.
[9] G. Dearnaley, Nucl. Instr. and Meth. B50 (1990) 385.
[10] H.X. Zhang et al., Rev. Sci. Instrum. B6 (1990) 574.
[11] T.H. Zhang et al., Surf. Coat. Technol., 51(1992) 455.
[12] T.H. Zhang et al., Nucl. Instr. and Meth. B59/60 (1991) 828.
[13] W.L. Lin et al., Surf. Coat. Technol., 51(1992) 534.
[14] T.H. Zhang et al., Surf. Coat. Technol., 65 (1994) 148.
[15] T.H. Zhang et al., Nucl. Instr. and Meth. B67 (1992) 458.
[16] P. Huang, R.F. Hochman, Mater. Sci. Eng. A115 (1985) 257.
[17] M.K. Lei, L.S. Dai, L.J. Yuan, F.L. Liu, Z.L. Zhang, Mater. Mech. Eng. 19 (1995) 29.
[18] D.L. Williamson, O. Ozturk, R. Wei, P.J. Wilbur, Surf. Coat. Technol. 65 (1994) 15.
[19] M.K. Lei, Z.L. Zhang, J. Vac. Sci. Technol. A 13 (1995) 2986.
[20] W. Miao, K. Tao, B.X. Liu, B. Li, Nucl. Instr. And Meth. B 160 (2000) 343.
[21] R. Wei, Surf. Coat. Technol., 83 (1996) 218.
[22] S.G. Bull, A.M. Jones and A.R. McCabe, 9th Int. Conf. SMMIB’95, San Sebastian, Spain (1995) Abstr. 0-30, p. 83.
[23] H. Zhang, X. Zhang, F. Zhou, Surf. Coat. Technol. 103-104 (1998) 200.
[24] L. Xianghuai, Surf. Coat. Technol. 131 (2000) 261.
[25] G.L. Diens and D.C. Damask, J. Appl. Phys. 29 (1958) 1713.
[26] P.S. Ho, Surf. Sci. 72 (1978) 253.
[27] A. Miotello and P. Mazoldi, J. Appl. Phys. 54 (1983) 7.
[28] A.H. Eltoukhy and J.E. Green, J. Appl. Phys. 51 (1988) 4444.
[29] E. Antoncik, Radiat. Eff. 116 (1991) 375; 127 (1993) 75.
[30] H.U. Jager, J. Appl. Phys. 78 (1995) 176.
[31] S.H. Valiev, T.S. Pugacheva, F.G. Jurabekova, S.A. Lem, Y. Miyagawa, Nucl. Instrum. Methods, B 127/128 (1997) 265.
[32] A.D. Marwick, Nucl. Instr. And Meth. 182/183 (1981) 827.
[33] D.C. Kothari, V.N. Kulkarni, A. Miotello, L. Guzman, G. Linker, B. Strehlau, Surf. Coat. Technol. 83 (1996) 88.
[34] P. Sigmund, in “Sputtering by Particle Bombardment,” Vol. 1, edited by R. Behrich(Springer, Heidelberg, 1981)p.9.
[35] C.M. Davisson, Nucl. Instr. and Meth. B13 (1986) 421.
[36] H. Kraulte, Nucl, Instr. and Meth. 134(1976) 167.
[37] R. Sizmann, J. Nucl. Mater. 69/70 (1978) 386.
[38] Y. Adda, M. Beyeler, and G. Brebec, Thin Solid Films, 25 (1975) 107.
[39] G.J. Dienes and A.C. Damask, J. Appl. Phys. 29 (1958) 1713.
[40] K.C. Russel, Proger. Mat. Sci. 28 (1984) 229.
[41] T.R. Anthony, “ Radiation Induced Voids in Metals,” (1971) p. 630.
[42] R. A. Johnson and N. Q. Lam, Phys. Rev. B 13 (1976) 4364.
[43] R. A. Johnson and N. Q. Lam, Phys. Rev. B 15 (1977) 1794.
[44] N.Q. Lam, P. R. Okamoto, and R.A. Johnson, J. Nucl. Mater. 78 (1978) 408.
[45] P.R. Okamoto, L.E. Rehn, and R.S. Averback, J. Nucl. Mater. 108/109 (1982) 319.
[46] J.R. Manning, Bull. Am. Phys. Soc. 23 (1978) 287.
[47] J.R. Manning, “ Phase Stability During Irradiation,” 1981, p. 3.
[48] H. Wiedersich, P.R. Okamoto, and N.Q. Lam, J. Nucl. Mater. 83 (1979) 98.
[49] N. Q. Lam and G..K. Leaf, J. Mater. Res. (1986) 251.
[50] N.Q. Lam and H. Wiedersich, Nucl. Instr. And Meth. B 18 (1987) 471.
[51] A.M. Yacout, N.Q. Lam, J.F. Stubbins, Nucl. Instr. And Meth. B 59/60 (1991) 57.
[52] S.H. Han, G.L. Kulcinski, and J.R. Conard. Nucl. Instr. and Meth. B45 (1990) 701.
[53] S.H. Han, Ph.D. Thesis, University of Wisconsin, Madison, Wisconsin（1988）.
[54] J.H. Liang, Ph.D. Thesis, University of Wisconsin, Madison, Wisconsin（1989）.
[55] H.W. Chang and M.K. Lei, Computer Material Science, 33 (2005) 459.
[56] I.F. Ziegler and J.P. Biersack, SRIM: The Sopping and Range of Ions in Matter, Version 96.07(IBM-Research, Yorktown,1996).
[57] A.C. Hindmarsh, in Scientific Computing, edited by R.S. Stepleman, M Carver, R. Peskin, M.F. Ames, and R. Vichnevetsky(North-Holland, Amsterdam, 1983)p. 55.
[58] R. Poerschke and H. Wollenberger, Thin Solid Films, 25 (1975) 167.
[59] R. Poerschke and H. Wollenberger, Radiat. Eff. 24 (1975) 217; 49 (1980) 225.
[60] W. Wagner, R. Poerschke, A. Axman, and D. Schwahn, Phys. Rev. B 21 (1980) 3087.
[61] W. Wagner, R. Poerschke and H. Wollenberger, J. Phys. F 12 (1982) 405.
[62] W. Wagner, L.E. Rehn, H. Wiedersich and V. Naundorf, Phys. Rev. B 28 (1983) 6780.
[63] V. Naundorf, “ Measurement of Radiation Induced Impurity Diffusion in Copper ,” p. 934, in “Point Defects and Defect Interactions in Metals, ”edited by J. I. Takamura, M. Doyama, and M. Kiritani, North-Holland Publishing Company, Amsterdam(1982).
[64] R.W. Siehel, “ Atomic Defects and diffusion in Metal ,” p. 533, in “Point Defects and Defect Interactions in Metals,” edited by J.I. Takamura, M. Doyama, and M. Kiritani.(North-Holland publishing company, Amsterdam, 1982).
[65] S. Fujikawa, “ Self-Diffusion of Cu in Copper”, p. 554, in “Point Defects and Defect Interactions in Metals,” edited by J.I. Takamura, M. Doyama, and M. Kiritani.(North-Holland publishing company, Amsterdam, 1982).
[66] M. Born and J. E. Mayer, Z. Phys. 75 (1932) 1.
[67] L. H. Thomas, Proc. Camb. Phil. Soc. 23 (1926) 542.
[68] E. Fermi, Z. f. Physik 48 (1928) 73.
[69] M. Nastsai, J.W. Mayer, J.K. Hirvonen, “Ion-Solid interaction: fundamentals and applications,” (Cambridage University Press, Cambridage, 1996) p. 503.
[70] A. Sommerfeld, Z. f. Physik 78 (1932) 283.
[71] N. H. March, Proc, Camb. Phil. Soc. 46 (1950) 356.
[72] G. Moliere, Z. f. Naturforsch A2 (1947) 133.
[73] W. Lens, Z. f. Physik77 (1932) 713.
[74] H. Jensens, Z, Physik77 (1932) 722.
[75] O.B. Firsov, Zh. Eksp. Teor. Fiz. 32 (1957) 1464.
[76] J. Lindhard, V. Nielsen, and M. Scharff, Mat. Fys. Medd. Dan. Vid Selsk. 10 (1968) 36.
[77] J. F. Z.iegler, J. P. Biersack, and U. Littmark, “Stopping and Range of Ions in Solids,” Vol. 1 (Pergamon Press, New York, 1985).
[78] M. Nastsai, J.W. Mayer, J.K. Hirvonen, “Ion-Solid interaction: fundamentals and applications,” (Cambridage University Press, Cambridage, 1996) p. 58.
[79] O.B. Firsov, JETP.7 (1958) 308.
[80] J. P. Biersack and L.G. Haggmark, Nucl. Instr. and Meth. 174 (1980) 257.
[81] J. Lindhard, V. Nielsen and M. Scharff, Mat. Fys. Medd. Dan. Vid. Selsk. 10 (1968) 36.
[82] N. Bohr, Phil. Mag. 25 (1913) 10.
[83] N. Bohr, Phil. Mag. 25 (1915) 581.
[84] H. A. Bethe, Ann. Phys. 5 (1930) 325.
[85] H. A. Bethe, Z. Phya,76 (1932) 293.
[86] H. A. Bethe, Rev. Mod. Phys. 22 (1950) 213.
[87] N. Bohr. Phys. Rev. 58 (1940) 654.
[88] N. Bohr. Phys. Rev. 59 (1941) 270.
[89] J. Lindhard, M. Scarff, H. E. Schiot, K. Dan. Vidensk. Selsk., Mat. Fys. Medd. 33, No. 14(1963).
[90] G. H. Kinchin and R.S. Pease, Rep. Phys. 18 (1955) 1.
[91] W. S. Snyder and J.S. Neufeld, Phys. Rev.97 (1955) 1926.
[92] W. S. Snyder and J.S. Neufeld, Phys. Rev.97 (1955) 1636.
[93] J. Lindhard, V. Nielsen, M. Scharff, and P. V. Thomsen, K. Dan. Vidensk. Selsk., Mat. Fys. Mell. 33, No. 10(1963).
[94] M. T. Robinson, “Nuclear Fission Reactors,” British Nuclear Energy Society, London, p. 364(1970).
[95] M. Eckstein, “Computer Simulation of Ion-Solid Interactions,” (Spring-Verlag, Berlin, 1991).
[96] Robinson, M. T. and I.M.Torrens, Phys. Rev. B9 (1974) 5008.
[97] P. Sigmund, in “Sputtering in Paricle Bomdbardment I,” edited by R. Behrisch, Spinger-Verlag Berlin Heidelberg, 8(1981).
[98] J. Roth, in “Symposium on Sputtering,” edited by P. Varga, and F. P. Vienbock, Inst. Allgem, Physik, Vienna, 733(1980).
[99] P. Sigmund, Phys. Rev. 14 (1969) 383.
[100] D. A. Thompson, Rad. Eff. 56 (1981) 104.
[101] N. Matsunami et al., “Energy Dependence of Sputtering Yields of Monatomic Solids,” Nagoya University Report IPPJ-AM-14(1980).
[102] N. Matsunami et al., “Energy Dependence of Ion-Induced Sputtering Yields of Monatomic Solids in the Low Energy Region,” Nagoya University Report IPPJ-AM-52(1987).
[103] J. Bohdansky, Nucl. Instr. And Meth. B2 (1984) 587.
[104] J. Bohdansky, IAEA, Vienna, 61(1984).
[105] D. Rosenberg and G. K. Wehner, J. Appl. Phys. 33 (1962) 1842.
[106] H. Ohtsuka et al., J. Nucl. Mat. 76/77 (1978) 188.
[107] C. R. Finfgeld, “Proton Sputtering,”ORO-3557-15(1975).
[108] O. Almen and G. Bruce, Nucl. Instr. and Meth. 11 (1961) 279.
[109] K. Sone et al., Proc. Int, Symp. Plasma-Wall Interaction, Pergamon Press, London, 323(1977).
[110] D. Farkas, I. L.Singer, and M. Rangaswamy, J. Appl. Phys. 57 (1985) 1114.
[111] H. Wiedersich, N.Q. Lam, in “Phase transformation during irradiation,” ( edited by Frank V. Nolfi, Jr), Applied Science Publisher, London and New York (1983).
[112] L.E. Rehn and P.O. Okamoto, in “Phase transformations during irradiation,” (1983).
[113] R. Lennartz, F. Dworschak, and H. Wollenberger, J. Phys. F 7 (1977) 2011.
[114] N.Q. Lam, H.A. Hoff, H. Wiedersich and L.E. Rehn, Surface Science, 149 (1985) 517.
[115] M.W. Thompson, “Defects and Radiation Damage in Metals,” (Cambridage University Press, 1969)
[116] D.L. Williamson, J.A. Davis, P.J. Wilbur, J.J. Vajo, R. Wei, J.N. Matossian, Nucl. Instr. and Meth. B 127/128 (1997) 930.
[117] S. Parascandola, R. Gunzel, R. Grotzschel, E. Ritchter, W. Moller, Nucl. Instr. and Meth. B 136-138 (1998) 1281.
[118] P.D. Parry, J. Vac. Sci. Technol. B 12 (1994) 875.
[119] J.P. Blanchard, J. Vac. Sci. Technol. B 12 (1994) 910.
[120] X. Tian and P.K. Chu, J. Phys.D: Appl. Phys. 34 (2001) 1639.
[121] H.S. Carslaw and J.C. Jaeger, “Conduction of Heat in Solids,” (Oxford University Press, Oxford, 1959), p. 75.
[122] M.W. Chase et al., JANAF Thermochemical Tables, 3rd ed., J. Phys. Chem. Ref. Data, 14, Suppl. 1, 1985.
[123] M. Nastsai, J.W. Mayer, J.K. Hirvonen, “Ion-Solid interaction: fundamentals and applications, ” (Cambridage University Press, Cambridage, 1996) p. 146.
[124] W. Eckstein, “Computer Simulation of Ion-Solid Interactions,” Springer, Berlin, 1991.
[125] P. Pichler and R. Schork, “Radiation Effects and Defects in Solids,” V 127 (1991) p. 367.
[126] King et al., J. Nucl. Mater. 117 (1983) 12.