這篇論文的主旨為設計一個在頻寬之內NF 都小於 3 dB 的低雜訊放大器並把它整合進射頻前端電路之中，其電路會把原本在晶片外的相位分離器整合至晶片中，以符合高度整合性的需求。為了達成雜訊小於3 dB的主旨，我們採用了雜訊相消技術到單端輸入和單端輸出的shunt-shunt feedback LNA之中。頻寬最佳化的低雜訊放大器在所要的頻寬 2.4 GHz 到6 GHz 中，其 NF 的表現皆在 3 dB之下。雜訊最佳化的低雜訊放大器在目標頻段 2.6 GHz 上有 NF 等於 1.05 dB 的表現。
為了符合高度整合的要求，我們使用了寬頻主動式而不使用電感的相位分離器。此相位分離器可使原本單端的RF及LO輸入變成差動式訊號來供給其後的雙平衡吉伯式混頻器做使用。相位分離器的模擬結果為在所要的頻寬之內 (2.4 GHz到 6 GHz)，其增益誤差小於0.75 dB，而相位誤差則小於1.55度。
結合以上的子電路就可以形成兩個電路系統：頻寬最佳化以及雜訊最佳化的射頻前端電路。這兩個電路皆使用TSMC 0.18-μm 1P6M RFCMOS的製程。在2.4 GHz 到 6 GHz中，頻寬最佳化的射頻前端電路之量測結果為13.8 dB ~ 19.7 dB的增益和6 dB ~ 9.4 dB 的NFSSB 。在1.8 伏特的電壓下，其所耗的電流包含輸出緩衝器為27.2 mA。至於雜訊最佳化的射頻前端電路在2.6 GHz時的量測結果為21.5 dB的增益、4.58 dB的NFSSB。在1.8 伏特的電壓下，其所耗的電流包括輸出緩衝器為15.4 mA。

The main goals of this thesis are to design a wideband low noise amplifier (LNA) with noise figure (NF) lower than 3 dB and integrate it into the RF front-end with on-chip baluns. In order to achieve the low NF requirement, the noise canceling technique is applied to the single-ended shunt-shunt feedback LNA. The simulated NF of bandwidth-optimized LNA is lower than 3dB over the interest bandwidth from 2.4 GHz to 6 GHz and that of the noise-optimized LNA is only 1.05 dB at the target frequency, 2.6 GHz.
To meet the need of highly integration, wideband active balun without any inductor is adopted for the differential conversion of single-ended RF and LO signals. Therefore, the double-balanced Gilbert-cell mixer can be used after. Simulated results show that gain error and phase error of the active balun are less than 0.75 dB and 1.55 degree, respectively.
By integrating above blocks, two RF front-end circuits are designed for bandwidth and noise optimization, respectively. The test chips are fabricated by TSMC 0.18-μm 1P6M RFCMOS process. For the bandwidth-optimized RF front-end, over the whole interest bandwidth, the measured conversion power gain is from 13.8 dB to 19.7 dB and NFSSB is from 6 dB to 9.4 dB. The current consumption including output buffer is 27.2 mA under 1.8 V VDD. For the noise-optimized RF front-end, the measured results at 2.6 GHz are 21.5 dB conversion power gain, 4.58 dB NFSSB, and 15.4mA current consumption (including output buffer) under 1.8 V VDD.

[1] Stefan Andersson, Christer Svensson, and Oskar Drugge, “ Wideband LNA For a Multi-standard Wireless Receiver in 0-18um CMOS, ” Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European, 16-18 Sept. 2003, pp. 655-658
[2] Chang-Wan Kim, Min-Suk Kang, Phan Tuan Anh, Hoon-Tae Kim, and Sang-Gug Lee, “An Ultra-Wideband CMOS Low Noise Amplifier for 3–5-GHz UWB System,” in IEEE Journal of Solid-State Circuits, vol. 40, no. 2, February 2005, pp. 544-547
[3] Frank Zhang and Peter Kinget, “Low Power Programmable-Gain CMOS Distributed LNA for Ultra-Wideband Applications, ” Symposium on VLSI Circuits Digest of Technical Papers, 16- 18 June 2005, pp. 78-81
[4] Air Interface for Fixed Broadband Wireless Access Systems-Amendment 2 : Medium Access Control Modifications and Additional Physical Layer Specifications for 2-11 GHz, IEEE std. 802.16a, Part 16, 2003.
[5] Adlane Fellah, “WiMAX, NLOS and Broadband Wireless Access (Sub-11 GHz) Worldwide Market Analysis 2004-2008”, Maravedis Inc., Feb. 2004.
[6] Wireless LAN Medium Access Control (MAC) and Physical Layer (PHY) specifications: Higher-speed Physical Layer Extension in the 2.4-GHz Band, IEEE std. 802.11b, Part 11, Sep. 1999.
[7] Wireless LAN Medium Access Control (MAC) and Physical Layer (PHY) specifications: Higher-speed Physical Layer in the 5-GHz Band, IEEE std. 802.11a, Part 11, Sep. 1999.
[8] A.A.Abidi, “Direct Conversion Radio Transceivers for Digital Communications,” IEEE Journal of Solid-State Circuits, Vol. 30, No.12, pp.1399-1410, July 1995.
[9] B. Razavi, “Design Considerations for Direct Conversion Receivers,” IEEE Transactions on Circuits and Systems II, Vol.44, No.6, pp. 428-453, June 1997.
[10] J. Crols and M.Steyaert, “ Low-IF Topologies for High-Performance Analog Front-Ends for Fully Integrated Receivers,” IEEE Transactions on Circuits and Systems II, Vol. 44, No.6, pp. 269-282, March, 1998.
[11] T. H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits,
1st edition, New York: Cambridge Univ. Press, 1998.
[12] W. Zhuo, S. Embabi, J. Pineda de Gyvez, and E. Sanchez-Sinencio, “Using capacitive cross-coupling technique in RF low noise amplifiers and down-conversion mixer design,” in Proc. ESSCIRC, 2000, pp.116–119.
[13] J. B. Beyer et al., “MESFET Distributed Amplifier Design Guidelines,”
IEEE Trans. Microwave Theory and Techniques, pp. 268-275, March 1984.
[14] Andrea Bevilacqua, Ali M. Niknejad, “ An Ultrawideband CMOS Low-Noise Amplifier for 3.1-10.6-GHz Wireless Receivers,” in IEEE Journal of Solid-State Circuits, vol.39, no.12, December 2004, pp. 2259~2268
[15] Federico Bruccoleri, Eric A. M. Klumperink, Bram Nauta, “Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling,” in IEEE Journal of Solid State Circuits, vol.39, no. 2, February 2004 pp. 275~282.
[16] H. Ma, S. J. Fang, F. Lin, and H. Nakamura, “Novel Active Differential Phase
Splitters in RFIC for Wireless Applications,” IEEE MTT, vol.46, pp 2597-2603,
Dec. 1998.
[17] Ta-Tao Hsu and Chien-Nan Kuo, “Low Power 8-GHz Ultra-Wideband Active Balun,” in IEEE SiRF 2006, pp. 365~368
[18] Darabi, H. and Abidi, A.a., “ Noise in RF-CMOS mixer: a simple physical model,” IEEE J. Solid-State Circuits, vol. 35, pp. 15-25, Jan. 2000.
[19] Bo Shi and Michael and Yan Wah Chia, “A 3.1-10.6 GHz RF Front-End for
MultiBand UWB Wireless Receivers,” in IEEE Radio Frequency Integrated Circuits Symposium, 2005, pp.343~346
[20] Jussi Ryynanen, Kalle Kivekas, Jarkko Jussila, Aarno Parssinen, Kari Halonen, “A Dual-Band RF Front-End For WCDMA and GSM Applications,” in IEEE Custom Integrated Circuits Conference, 2000, p.p. 175~178