Inelastic Electron Tunneling Spectroscopy Study of MOS Diodes with High-κ Gate Dielectrics on GaAs

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研究生：	王政鈞 Cheng-Jun Wang
論文名稱：	Inelastic Electron Tunneling Spectroscopy Study of MOS Diodes with High-κ Gate Dielectrics on GaAs 在砷化鎵之高介電常數閘極介電層電容元件之非彈性電子穿隧能譜研究
指導教授：	連振炘 Chen-Hsin Lien 郭瑞年 Ray-Nien Kwo 洪銘輝 Ming-Hwei Hong
口試委員:
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering
論文出版年：	2008
畢業學年度：	96
語文別：	英文
論文頁數：	78
中文關鍵詞：	非彈性電子穿隧能譜、砷化鎵、高介電常數閘極介電層
相關次數：	點閱：2 下載：0
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非彈性量子穿隧光譜 (Inelastic electron tunneling spectroscopy) 是一種極敏感的量測系統，可用來量測聲子、化學鍵結的振動能譜，以及介電層中的缺陷，近年來由於氧化層(high-κ)的厚度降於5nm 以下，IETS 量測技術已被廣泛的用來研究金氧半元件(MOS device)，本實驗利用此技術來量測高介電常數閘極氧化物:氧化鉿以及氧化鉿摻雜氧化釔成長在矽以及砷化鎵上的聲子能量和化學鍵結的振動能譜，以砷化鎵為基板的IETS 光譜中，我們發現了因為氧摻雜於砷化鎵中所造成的缺陷的振動能量，關於此部分，可以在設計一系列由分子束磊晶(MBE)成長的氧化鉿以及原子層沉積(ALD)成長的氧化鉿長在砷化鎵的基板上，由於MBE 的成長方式中不含氧，而ALD 的成長方式有氧化劑的存在，因此，若我們可於ALD 成長氧化鉿於砷化鎵上發現氧缺陷於砷化鎵中的振動能量，而在MBE成長氧化鉿於砷化鎵上沒有發現此振動能量，那將可以更進一步的確認氧缺陷在砷化鎵上的真實性，這將是我們未來的工作。

Introduction...........................................1
1 Limits to SiO2 Scaling................................1
2 Alternative High-κ Gate Dielectric....................2
3 Candidates for High-κ Gate Dielectrics................3
Tunneling Spectroscopy.................................7
1 Brief Introduction of IETS Development................7
2 Physical Basis of Inelastic Electron Tunneling Spectroscopy..............................................8
3 Bias Polarity Dependence of IETS.....................13
4 Trap study of IETS...................................16
4.1 Trap-assisted Conduction and Charge Trapping.......16
4.2 Physical Locations and Energy Levels of Traps......17
Experimental Details..................................21
1 Device Fabrication...................................21
2 Measurement Methods..................................26
2.1 AC Modulation Technique............................26
2.2 Experimental Instrumentation.......................27
3 Data Analysis: Dual Temperature Technique............30
4 Summary..............................................30
Experimental Results..................................33
1 IETS of Al/HfO2/Si...................................33
1.1 Silicon Phonon Modes...............................33
1.2 Vibration Modes of Silicon Dioxide.................34
1.3 Aluminum Phonon Modes..............................35
1.4 Vibration Modes of Aluminum Oxide..................38
1.5 Vibration Modes of Hafnium Oxide...................38
1.6 IETS Spectra of Al/HfO2/Si.........................44
2 MOS Structure on GaAs-based..........................52
2.1 GaAs Phonon Modes..................................52
2.2 Defects in GaAs....................................52
2.3 Vibration Modes of YDH.............................57
2.4 IETS of Al/YDH/GaAs................................62
3 Problem of the tunneling current.....................68
Conclusion............................................72
Reference................................................73

                                

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