本論文研究以PECVD在矽上製作以摻鍺二氧化矽為波導核心層(core)、上下包覆層(cladding)皆為二氧化矽的三層平面波導結構，施以熱極化誘發其產生二階非線性係數，並架設馬克-詹德干涉儀量測系統以量測其值大小，希望未來能應用在光纖通訊上。
首先利用已知的參數以BeamPROP和BPM_cad模擬軟體模擬估計確定波導的結構，再以PECVD實際製作；並利用菱鏡耦合儀量測實際薄膜的參數。波導製作完成後，再施以熱極化以誘發波導內的鍺缺陷使其產生二階非線性係數。
最後再架設馬克-詹德干涉儀，以量測波導內經過熱極化 後誘發產生的非線性係數。首先為了確定我們自行架設的量測系統是否能正確的工作，故先量測已知非線性係數γ33 ＝30.9 pm/V、γ13＝ 9.6 pm/V的非線性晶體-LiNbO3，由我們自行架設的馬克-詹德干涉儀量測後的結果其γ33值約為29.49 ± 1.37，量測修正係數為αS＝1.41 pm/V；而其γ13值約為9.15 ± 0.7 pm/V，量測修正係數為αP＝0.45 pm/V。量測的誤差都在10 %以內。
至於量測摻鍺二氧化矽波導經過熱極化誘發產生的非線性係數的部分，就目前量測的結果看不出熱極化前後波導非線性值的變化。至於原因為何目前還無法確定，因此下一步希望能找出問題的癥結並嘗試解決，希望未來能利用我們架設的馬克-詹德干涉儀量測出摻鍺二氧化矽波導經過熱極化誘發產生的非線性係數。

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