本研究利用真空電弧熔煉製備非等莫耳高熵合金靶材一號和高熵合金靶材二號，並以反應式直流磁控濺鍍法鍍製高熵薄膜，探討在不同的製程參數下薄膜的微結構、晶體結構、機械性質與接觸角值，並對薄膜進行大氣退火以及真空退火處理，評估此高熵膜之抗氧化性與熱穩定性，最後選擇接觸角表現最佳之薄膜鍍覆於圓盤上，進行實際模擬烹煮試驗和耐酸鹼測試。
實驗結果發現， 最佳參數下一號合金表面鍍層具有緻密、非晶結構，對應接觸角的最大值 83.5°，更高的腔體溫度和基板偏壓會造成結晶性的提升，伴隨接觸角的下降。薄膜在 1100℃ 大氣退火兩小時後，氧化層厚度約為 187 nm ，顯示氧化情況並不嚴重，具備優良的抗氧化性。在熱穩定性方面，薄膜在 600℃ 真空退火一小時後，非晶結構即轉變為非晶 + FCC 奈米晶的混合結構，隨著退火溫度提升至 800℃，表面形貌則無明顯變化。實際模擬烹煮試驗中，最佳參數薄膜確實擁有優良之抗沾黏效果，可以有效避免食物的黏附。最後，浸泡工研醋和碳酸氫鈉水溶液後，薄膜均能保持完整，沒有剝落或腐蝕痕跡，顯示薄膜亦具有良好之耐酸鹼性。
另一方面，二號合金表面鍍層，由於 B 含量偏低，使高熵合金的高熵效應、晶格扭曲效應和遲緩擴散效應無法確實彰顯，不易維持非晶結構，故隨著基板偏壓的提升，結晶性增加使得接觸角明顯下降，在模擬烹煮實驗中，抗沾黏效果不如一號合金表面鍍層。整體而言，一號合金表面鍍層有良好的抗沾黏特性，於家用鍋具的應用極具商業潛力。

Two series of High-entropy thin films were sputter-deposited on silicon wafers. By the systematic variation of gas flow ratio (R), chamber temperature (TC) and substrate bias (VS), microstructure, crystal structure, contact angle and oxidation resistance have been investigated. Furthermore, stainless steel cooking plates deposited with optimal films were studied to evaluate their anti-sticking performance and acid / base resistance.
The results show that #1 thin film exhibits a dense and amorphous structure, with highest contact angle 83.5°. Besides, the film displays excellent oxidation resistance. After air annealing at 1100℃ for 2h, the oxidation layer is only 187 nm. The plates with optimal films have good anti-sticking property in actual cooking test. And after soaking in vinegar and NaHCO3 solution, the films remain intact, without corrosion or peeling off.
On the other hand, #2 thin film shows less stability of amorphous structure. With the increasing substrate bias, the crystallinity increases and the contact angle drops.
This research demonstrates that #1 thin film performs good anti-sticking property and do have a potential for the application in cooking wares.

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