本實驗為以磁控濺鍍法鍍製BZT薄膜在高阻值Si-based基板上，製作成MFIS(metal-ferroelectric-insulator-semiconductor)之變容器，觀測其在高頻與微波頻段下的特性。此可應用於矽基板整合鐵電微波元件上，利用製程穩定性高、控制容易的半導體製程技術將薄膜型被動元件整合在單一晶片上，可滿足高頻通訊被動元件嚴格之規格要求。
實驗結果發現BZT在Si-based基板之MFIS變容器結構中，大部分的調變率來自Si半導體特性經由back-to-back串接合併的貢獻，因此oxide中的各種charge如oxide trapped charge、fixed oxide charge、mobile ion charge會造成平帶電壓之偏移，使得串接後的C-V圖形偏移或有遲滯的現象，其loss機制亦受這些charge的影響，因此未來若能控制製程條件如鍍膜溫度，退火條件以控制oxide中的charge量，則可進而改善其調變率或是loss值，即可應用在低損耗的微波傳輸線上。

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