近年來，隨著電子產品的普及，於是體積小、容量大的儲存裝置成為了熱門的研究重點。今日佔有主流地位的快閃記憶體隨著製程微縮遭受到了漏電流、高電壓等挑戰，但這也推動了許多新型記憶體的研究。
本論文提出一種新型懸浮閘接觸點電阻式隨機存取記憶體(FCRRAM)，利用50奈米Flash製程製作。此種記憶體可完全相容於Flash製程，藉由在製作接觸點時填充電阻性記憶體薄膜TiON，形成1D+1R的接觸點電阻式記憶體結構。
在直流與脈衝的分析中，藉由適當的操作條件，此接觸點電阻式隨機存取記憶體元件可以重複的進行電阻態轉換，並且擁有極大的高低阻態比、轉換速度快等優點，而懸浮閘電荷儲存記憶體元件可以進行資料寫入或抹除，因此此混合式元件可同時利用懸浮閘電荷儲存記憶體元件(Flash)以及電阻式隨機存取記憶體(RRAM)來儲存電荷，可以同時儲存二位元的資料來達到高密度的應用。
在可靠度方面，經過10K次的連續讀取測試以及150°C烘烤測試後無可靠度問題。這些元件特性顯示了此種新型懸浮閘接觸點電阻式隨機存取記憶體(FCRRAM)有機會成為下一代的熱門記憶體。

Recent years, the small volume and large capacity storage devices have become a popular research with the popularization of electronic products. Flash is the mainstream non-volatile memory the present day, which have suffered from leakage and high operation voltage with the process scale down. However, these challenges advance the more new research about new memory.
This thesis has proposed a Novel Contact RRAM and Flash Hybrid Memory (FCRRAM) which is fabricated by advances 50nm flash memory process. This memory cell is fully compatible with flash process. The deposited TiON RRAM film is sandwiched by tungsten contact and heavy doped n-type silicon in 1D+1R structure.
With proper operation, CRRAM can switch between high resistance state and low resistance state and flash can independently inject and remove electrons in floating gate by Fowler-Nordheim (FN) tunneling. Therefore, this memory can have MLC density with SLC reliability and performance to realize high density application.
In addition, excellent FCRRAM cell performance including 10M endurance, stable data retention under 150oC for 1000 hours, and cell immunity from disturbance support this new memory to be a promising candidate for high density storage application.

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