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研究生： 林仲桓
Lin, Chung-Huang
論文名稱： 利用角解析光電子能譜及低能量電子繞射研究鉛(100)薄膜在鍺(100)基底上之電子結構與薄膜性質
Study of the electronic structure and thin film properties of Pb(100) on Ge(100) by Angle-Resolved Photoemission(ARPES) and LEED
指導教授： 唐述中
Tang, Shu-Jung
口試委員: 鄭弘泰
鄭澄懋
唐述中
學位類別： 碩士
Master
系所名稱： 理學院 - 物理學系
Department of Physics
論文出版年： 2011
畢業學年度： 99
語文別： 中文
論文頁數： 46
中文關鍵詞： 鉛(100)薄膜 、角解析光電子能譜 、低能量電子繞射 、量子井態
外文關鍵詞： Pb(100) thin film, ARPES, LEED, Quantum well state
相關次數： 點閱：2  下載：0 
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    • 我們利用金原子在鍺(100)基底上形成的c(8x2)結構當作緩衝層，成功地在零下150℃製備原子平坦的鉛(100)薄膜；並利用角解析光電能譜術測量了鉛(100)薄膜量子井態的能帶結構。位在鉛(100)薄膜Γ ‾位置的量子井態能量與厚度的關係可以利Bohr-Sommerfeld量子化規則來計算。此外，我們還發現了鉛(100)的薄膜在升溫至室溫後，會形成兩個領域同時存在的六角形結構，並且此結構是鉛(111)面結構的兩倍大。量測此特殊六角型鉛結構的能帶結構，我們發現在表面布里淵區的邊界上能帶有著分裂的現象。

    We successfully grow the Pb(100) thin films on the substrate of Ge(100) by using Au/Ge(100)-c(2x8) reconstructed surface as a template at T=-150℃. Through the thickness dependence of quantum-well-state energies measured by photoemission spec-
    troscopy, we found the Pb(100) thin film grow layer-by-layer. By checking the Low Energy Electron Diffraction (LEED) pattern, we observed that the square structure of Pb(100) thin film trans-
    forms to a hexagonal structure after being annealed to room temperature, but the size of the special hexagonal lattice was different from that Pb(111) films.

    第一章 簡介...............................................................1 第二章 實驗技術與準備.....................................................3 2.1光電子能譜................................................................3 2.1.1三步驟模型.............................................................4 2.1.2角解析光電子能譜.......................................................9 2.2電子動能分析儀...........................................................11 2.3超高真空系統.............................................................13 2.4基底的準備...............................................................14 2.4.1濺鍍槍................................................................14 2.4.2鍺(100)表面重構.......................................................15 2.4.3低能量電子繞射儀......................................................17 2.5薄膜蒸鍍.................................................................20 2.5.1蒸鍍槍................................................................20 2.5.2石英晶體微天平........................................................21 2.5.3金的緩衝層確認........................................................22 第三章 表面態與量子井態..................................................25 3.1表面態...................................................................25 3.2量子井態.................................................................27 3.2.1 Bohr-Sommerfeld相位模型..............................................29 3.2.2量子數................................................................31 第四章 實驗結果與分析....................................................32 4.1鉛薄膜的層狀成長和量子井態能階分析.......................................32 4.1.1層狀成長..............................................................32 4.1.2量子井態能階分析......................................................35 4.2正方形與六角形的鉛薄膜...................................................36 4.2.1正方形的鉛薄膜........................................................36 4.2.2六角形的鉛薄膜........................................................38 4.3鉛薄膜原子結構的模型.....................................................41 第五章 結論..............................................................44 參考文獻....................................................................46

    [1] T.C. Chiang, Science 306,1990 (2004)
    [2] J.J. Paggel, C.M. Wei, M.Y. Chou, D.A. Luh, T. Miller, T.C. Chiang,
    Phys. Rev. B 66 ,233403 (2001)
    [3]D.A. Luh, T. Miller, J.J. Paggel, M.Y. Chou, T.C. Chiang, Science 292, 1131 (2001)
    [4]T.C. Chiang, Surf. Sci. Rep. 39, 181-235 (2000)
    [5]Y.H. Lu and P. W. Chen , Studies of the electronic structures and thin film properties of
    Pb on Ge(100) by ARPES and LEED, (2010)
    [6] Kan Nakatsuji, Ryota Niikura, Yuki Shibata, Massamichi Yamada , Takushi Iimori ,
    and Foumio Komori, Phys. Rev. B 80,081406 (2009)
    [7]Hans Lüth, Surfaces and Interfaces of Solid Materials ,Springer
    [8]N.W. Ashcroft and D. N. Mermin.G. Ertl, J. Küppers, Solid State Physics, Saunders
    College Publishing(1976)
    [9]P. E. J. Eriksson, M. Adell, Kazuyuki Sakamoto, and R. I. G. Uhrberg, Phys. Rev. B
    77, 085406 (2008)
    [10]J. Scha ̈fer, C. bluemenstein, S. Meyer, M. Wisniewski, and R. Claessen, Phys. Rev.
    Lett. 101,236802 (2008)
    [11]SQM 160 Rate/Thickness Monitor User’s Guide, LEYBOBD INFICON INC.
    [12]Ryota Niikura, Kan Nakatsuji, and Fumio Komori, Phys. Rev. B 83, 035311 (2011)
    [13]Kan Nakatsuji, Ryota Niikura, Yuki Shibata, Masamichi Yamda, Takushi Iimori, and
    Fumio Komori, Phys. Rev. B 80, 081406 (2009)
    [14]T.C, Chiang Photoemission studies of quantum well states in thin film (2000)
    [15]Mary Hope Upton, Photoemission Studies of The electronic structures and
    Properties of Thin Lead Films, Ph.D. thesism, University of Illinois at Urbana-
    Champaign (2005)
    [16]C. M. Wei and M. Y. Chou, Phys. Rev. B 75, 195417 (2007)
    [17]E.W Plummer , W. Eberhardt, Angle-Resolved Photoemission as a Tool for the
    Study of Surface

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