此篇論文主要是先就累增崩潰能量測量及元件故障機制之原理做討論。因為高功率元件的累增崩潰效應將導致元件的損壞，因此設計測試MOSFET、IGBT以及二極體之累增崩潰電路。電路中使用了市面上易於購得的8051控制器，本電路可經由調整比較器之比較電壓來控制元件電流的數值，因此可以使電流流到所需要的定額值，並且測量崩潰電壓，而可以預測元件之溫度以及計算元件之損耗能量，進而得知其強健度。

In this paper testing circuit for unclampted inductive switching method is set up that uses an 8051 control IC. The current of the device under test can be adjusted to rated value through adjusting the reference voltage of a comparator. With the measured break down voltage, the dissipated energy can be calculated and the ruggedness of the device can be evaluated.

1. B. Jayant Baliga “Power Semiconductor Devices,” NORTH Carolina University.

2. K. Dierberger “Uunderstanding The Differences Between Standard MOSFETs And Avalanche Energy Rated MOSFETs,” Oregon 97702 USA, Oct 1994.

3. D.L. Blackburn, “Turn-off Failure of Power MOSFETS,” Proc. 1985 IEEE Power Electronics Specialists Conference, pp 429-435, June, 1985.

4. “Application Note AN-7517,” FAIRCHILD, Oct 1999.

5. T. Mcdonald, M. Soldano, A.Murray, T.Avram “Application Note AN-1005,” International Rectifier.

6. “功率半導體應用手冊,” 徐氏基金會,1985.

7. “Application Note AN-7514,” FAIRCHILD, March 2002.

8. 游景鈺“CSLA1CD電流感測器使用說明,” 2001.

9. “Current Transducer HAL 50-s,” LEM.

10. “LM111/LM211/LM311 Voltage Comparator,” National Semiconductor, January 2001.

11. 黃良充“8051族系單晶片微電腦原理與實習,” 台北市, 第三波, 1999.

12. 戴國圓, “8051單晶片微電腦入門,” 台南市,台灣復文興業,1996.

13. John McGloin and Dumitru Sdrulla, “Estimating the temperature rise of power MOSFETs during the UIS test,” Applied Power Electronics Conference and Exposition, 1992. APEC '92. Conference Proceedings 1992., Seventh Annual23-27 Feb. 1992 Page(s):448 – 453.