電荷式的電容量測方法擁有很高的量測精準度以及易於操作之特性，這幾年來受到很大的矚目，並且被廣泛的應用在後段製程金屬接線電容的量測上。在本論文中，一種新穎而改良的電荷式電容量測方法被提出來。而由於此一新的電荷式電容量測方法可以完全避免掉在傳統的電荷式電容量測方法中所免除不了的，由電荷注入現象所造成的誤差，所以我們稱此新的電容量測方法為免於電荷注入誤差之電荷式電容量測方法。
在特別設計的佈局安排下，免於電荷注入誤差之電荷式電容量測方法可以有效率的用來做大量的電容量測。對先進的電路設計而言，正確的金屬接線電容的模型非常重要，而接線電容模型的萃取就正好需要大量的電容量測結果。此外，藉由此電荷式電容量測方法，這也是第一次能真正直接監測到在CMP製程中浮動電位的dummy-fill對金屬接線電容的影響。再者，我們更成功的將電荷式電容量測方法的應用，從定電容量測拓展到有電壓變化的電容。本論文將呈現數個小尺寸的金氧半電晶體閘極電容量測的例子及其特殊應用。

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