超奈米微晶鑽石(UNCD)薄膜因兼具良好的物理化學性質及平坦的表面，適合於電子元件的應用。因為其發展較晚，雖然在這幾年持續受到大家的重視，但是專門針對UNCD進行研究的論文仍相對較少。雖然關於成長微晶鑽石膜(MCD)的成核機制及前處理已經有很多論文進行探討，但是由於相對於MCD，成長UNCD的氣氛中具備較少量的氫氣且較大量的碳原子濃度，因此UNCD的成核機制與MCD大不相同。由於UNCD晶粒較小，更為強調鑽石膜的平整性，所以藉由前處理來增加鑽石成核密度對UNCD來說將更為重要。
本實驗藉由在不同金屬基板上成長UNCD後發現，在沉積UNCD的條件下，由於氣氛中的碳原子濃度大於MCD的成長條件，使得成長鑽石膜初期的開始成核時間，受基板吸附碳原子的能力影響更大。就長期成長UNCD鑽石膜來說，受基板的總溶碳量影響，總溶碳量越少，長成之鑽石膜也越厚。藉由UNCD製作鑽石角錐時亦顯示，前處理是否能產生足夠的成核密度，將是影響鑽石角錐成品形狀的最大因素。

Abstract
Comparing the UNCD grown on Ti, Mo and W, the diamond on Mo shows the shortest incubation time. By the XRD, SIMS concentration profile and ESCA surface binding analysis, the substrate with the better chemisorption for carbon and the less carbon solubility will get the shortest diamond growth incubation time. The cross section SEM image of the sample shows the thinner metal interlayer the thicker UNCD grown during the same growth time. By comparing the SEM image results and the carbon solubility of the substrates, the less carbon dissolved into the substrate, the thicker diamond film can be gotten during the same growth time.
In order to get thicker diamond films during the same growth time, the substrate with the worse carbon solubility was chosen. For enhancing the chemisorption ability of the substrate, the silicon substrate was pretreated by ultrasonication with the mixed powder (diamond & Ti powder) solution. By SEM image, UNCD film grown on the silicon substrate pretreated with mixed powder solution shows the shortest incubation time and thicker during the same growth time. By SIMS surface analysis, Ti residue on the substrate was identified after mixed powder treated.
Because of the high nucleation density, smooth UNCD vertical tip surface can be gotten. The tip size and density were controlled by wet-etching process. Due to the wet-etching control difficulty, the tip size will be different.

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