摘要
內嵌式記憶體現今已被廣泛的運用至各種系統晶片中，並作為行動裝置晶片內不可或缺的主要部份，為了能夠整合成系統單晶片，不需額外製程與光罩，完全相容於CMOS邏輯製程的可多次寫入非揮發性記憶體逐漸受到重視。本論文提出一新型邏輯相容接點耦合可多次寫入記憶體，此新型元件藉由接點耦合作為控制閘極提高對浮動閘極耦合率，達到高注入效率低功耗操作。
此新型邏輯相容接點耦合可多次寫入非揮發性記憶體採用通道熱電洞引發熱電子注入作為寫入操作，並利用選擇閘極與位元線控制；或是採用汲極Fowler-Nordheim穿隧效應，利用位元線與字元線控制；與FN穿隧區域抹除操作，以上操作皆達到多次性寫入抹除。元件的CHHIHE寫入時間200μs、FN寫入時間200ms、抹除時間200ms內完成，元件耐久度超過10k以上，125℃高溫條件下1000小時資料保存性依然良好。結構發展出全新的接點耦合架構有效提高對浮動閘極的控制能力並縮小元件面積。本文所提出此新型元件擁有良好的操作能力、長時間資料可靠度、並可依需求選取高速度或是低功率操作。

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