The physical properties of magnetic domain structure and electric transport of ferromagnetic thin films and wires were studied. A magnetic force microscopy (MFM) is used to examine the domain configuration of Ni, Co, and Ni81Fe19 thin films. According to the experimental and theoretical calculation, the period of the domain varies with the thickness of the ferromagnetic thin films. In addition, the domain configuration can be altered and modulated by the applied magnetic field, which influences the direction of the magnetization within the domain and domain wall. Moreover, the temperature dependence on surfaces resistance of ferromagnetic thin films and wires are measured by a four-point measuring method and a T-junction microstrip method, respectively, to evaluate the direct current (DC) and radio frequency (RF) resistivities arising from the domain wall scattering. We observe that the resistivity of the ferromagnetic thin films change manifestly as the current conducts from parallel (CIW) to perpendicular (CPW) to the domain walls. The DC resistivity of the current conducting parallel to domain walls (CIW) is significantly smaller than that of the perpendicular (CPW) case. Whereas indistinguishable changes in CIW and CPW conducitons are observed that as signals increase to microwave frequency where films were fabricated in T-junction microstrip. Furthermore, the temperature dependence on size effect of the ferromagnetic wires is also investigated. The results of the data fitting reveal the circumstance of surface diffusion and can be used to assume the mean free path near 0K.

本論文探討鐵磁性薄膜與線之磁區結構以及電子在此結構中之傳輸特性。本實驗利用磁力顯微儀來量測鎳、鈷以及鎳鐵薄膜之磁區結構。利用所探測之磁力影像以及理論計算來分別估計磁區及磁壁之寬度並予以比較。如所預期，磁區之寬度與薄膜厚度之平方根成線性關係。此外，亦利用外加磁場以改變磁區結構並從而探討外加磁場與磁區結構周期之關係。使磁區寬度達飽和之外加磁場會隨著鐵磁性薄膜厚度之增加而增加到一臨界值。
另外，利用四點量測及Ｔ型微帶線方法分別探討直流與射頻電流下與溫度變化之鐵磁性薄膜與線的表面磁阻與磁壁散射之關係。我們觀察到在直流電下當電流方向平行磁壁(CIW)與電流方向垂直磁壁(CＰW)其電阻值之變化。由於磁壁散射效應使得當電流方向垂直磁壁時之電阻大於當電流方向平行磁壁時之電阻。但是，利用Ｔ型微帶線探討在射頻之下磁壁散射效應時，發現此兩種通過磁區之傳輸方向之導電率沒有太大的差異。
最後，不同寬度之鐵磁性線在溫度變化下之電阻量測可經由理論模型進一步分析。根據曲線擬合結果，可得知鐵磁性線之表面擴散情形以及可大約估計在接近絕對零度時之電子平均自由路徑。

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