在此論文中，氧化鎵釓/砷化鎵(Ga2O3(Gd2O3)/GaAs)異質磊晶被加熱到780□C。此高溫回火的目的是為了活化佈置的離子。利用X光反射率(x-ray reflectivity)、及高解析度穿透式電子顯微鏡 (high-resolution transmission electron microscopy) 可得知試片在超高真空下回火仍然保持非常陡峭的界面，並且界面粗糙度小於0.2奈米(nm)。此氧化層被加熱到780□C仍然是非結晶態，這個結果對製程的需求來講是一個非常重要的參數。利用電流-電壓(current-voltage)和電容-電壓 (capacitance-voltage)量測得知此介電層在砷化鎵 (GaAs)上有極低的漏電流(10-8 to 10-9 A/cm2)、高介電常數 (15)，和非常低的界面態密度 (Dit)。此實驗結果顯示在升上高溫回火後閘極介電層和砷化鎵中間仍然具有非常平滑的界面。這個結果能確認氧化層與砷化鎵之間能夠維持低的界面態密度並且能確保MOSFET中高載子遷移率之通道。

Ga2O3(Gd2O3)/GaAs heterostructures have been annealed up to ~780□C. Studies using x-ray reflectivity and high-resolution transmission electron microscopy have shown that the samples annealed under ultra high vacuum(UHV) have maintained smooth and abrupt interfaces with the interfacial roughness being less than 0.2 nm. The oxide remains as amorphous, an important parameter for device consideration. Current-voltage and capacitance-voltage measurements have shown low leakage currents (10-8 to 10-9 A/cm2), a high dielectric constant of 15, and a low interfacial density of states (Dit) between gate dielectrics and GaAs. The attainment of a smooth interface between the gate dielectric and GaAs, even after high temperature annealing for activating implanted dopant, is a must to ensure the low Dit and to maintain a high carrier mobility in the channel of the metal-oxide-semiconductor field-effect- transistor (MOSFET).

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