本論文分兩部分，第一部份討論在磷化銦鎵的異質接面雙載子電晶體中，由於氫的包覆效應產生的特性之研究，由於氫在此種元件中所造成的載子包覆現象是引起電流增益增加的暫態現象的主要原因，本論文提出一個計算氫包覆比例的模型，並與SIMS量測的結果相比對，經過幾次熱回火處理，此種暫態效應可以被消除。第二部分以砷化鋁鎵/砷化鎵假晶高速電子遷移率電晶體元件與結構討論在磊晶成長的過程中，磷的原料會被沉積在成長腔體內，造成在關閉原料來源時仍有從腔体表面逸散的元素成分稱為記憶效應，實驗中藉由使用不同的材料源，PH3 與 TBP作為五族元素『磷』的材料源實驗中，以TBP取代PH3可以降低背景值達100倍，由於MBE系統中並不含任何磷的材料源，由其所成長的試片與MOVPE所成長的試片比較，也同樣證明以TBP做為材料源的優點。另外提出以電壓-電容量測方法，在pHEMT元件上，來決定緩衝層的磊晶品質，達到有效的監測與改善元件的絕緣性與電特性。

There are two parts in this thesis. Part I focuses on the transient effect in InGaP/GaAs hetero-junction bipolar transistors (HBTs). Part II focuses on the P memory effect and buffer-layer-quality determination using C-V measurement in AlGaAs/GaAs pseudomorphic high-electron-mobility transistors (pHEMTs). The characterization of hydrogen passivation for InGaP HBTs grown on semi-insulating GaAs substrates is studied. The transient effect caused by hydrogen passivation results the current gain (□) increase. The calculation of the hydrogen passivation ratio in the base layer is proposed to compare with the results using the secondary ion mass spectrometry (SIMS) measurement. The transient effect can be eliminated after three or more cycles of thermal annealing. The phosphorus concentration profiles were obtained by SIMS measurement for the analysis of the memory effect. The memory effect of phosphorus is observed during the epitaxial growth. The background phosphorus concentration can be improved about two order magnitudes using the group-V elements of tertiarybutylphosphine (TBP) instead of phosphine (PH3). A comparison of samples grown by molecular-beam epitaxy (MBE) reactor and metal-organic vapor-phase epitaxy (MOVPE) is also demonstrated. Capacitance-voltage (C-V) measurements are introduced to monitor and improve the epitaxial buffer layers in pHEMTs.

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