近年來在醫學、設備檢測、汽車、民生等各方面皆有相關產品，如何生產低成本、高性能的紅外線感測器則漸漸獲得重視。此外隨著微機電系統之迅速發展，再藉由日益成熟的半導體製程技術將致動或感測的微結構與積體電路整合至單一晶片中，以實現具有尺寸小、低成本、整合性與性能高的微系統。
本論文提出以CMOS MEMS技術為基礎之熱電式紅外線感測器，將熱電偶放置在吸收薄膜下方，具有面積小、高填充率的優點，再利用TSMC 0.35um 2P4M標準製程與簡單的體型微加工，不需要添加額外的材料與製程，使得系統整合性高而且製作成本低。透過結構的理論分析與CoventorWare數值模擬軟體，可得感測器在真空狀態下，響應度為119.81 V/W，雜訊等效溫差(NETD)為109.2 mK，時間常數為4.31 ms。最後再設計on-chip訊號處理電路，將此電路與感測器整合於同一晶片上，發展出具有高溫度靈敏度的紅外線感測晶片。

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