碳化矽材料是目前核能材料中最具潛力之一，其性質優異，如：低活性、高溫機械性質佳、輻射穩定性佳、抗腐蝕…等，而本論文的主要目的則是模擬核融合反應器，以及高溫氣冷式核分裂反應器之高溫輻射環境對碳化矽材料的輻射效應。
我們利用本校儀器組之加速器以5.4MeV之Si3+離子，進行6組不同溫度之照射實驗，其佈值條件分別為：500℃、600℃、800℃、1000℃、1200℃與1300℃ 10dpa。在所有實驗中只有溫度在600℃以上時，才有差排環的形成。差排環隨著溫度的升高，尺寸大致上也隨之增大，而密度則逐漸減少。分別比較高劑量與低劑量，高劑量之差排環尺寸皆較大而密度較小。此外，溫度高低對低劑量差排環的效應較小，溫度區間間隔需較大才可看出有明顯變化。由於單晶碳化矽不含加工製造缺陷，無法提供空孔有利之成核點，因此在所有條件下皆未發現空孔的存在。差排環的型態，目前推論是由格隙原子團聚，而造成之Frank型多一排原子之差排環。高分辨之電子顯微影像顯示某些區域極有可能符合以上推論，但在未超出影像範圍區域無法顯示完整差排環的兩端，因此此部分仍須努力。未來研究將進行更高溫以及更高劑量之照射實驗，以了解差排環是否會在6H碳化矽結構下演化為差排網或其他缺陷型態，並深入探討其機制。

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