隨著積體電路（IC）器件變得更加高效，使得半導體後段製程（BEOL）導線技術的金屬內連線尺寸縮小。由於通孔尺寸縮小，金屬電阻率逐漸受到表面散射影響。本碩士論文中探討了在介電層表面上形成超薄膜厚度（1.3奈米）的自組裝單分子層（SAM）以減少界面散射，從而降低整體金屬電阻率。具體而言，我們設計了一種BITES（苯基亞胺三乙氧基矽烷）的自組裝單分子層，其中末端芳胺基團能夠潛在地減少非彈性電子散射並同時改善金屬和二氧化矽間的附著性。根據Fuchs−Sondheimer（FS）模型，在結構為Ru/SAM/SiO2界面的反射率參數（p值）確定為p ≈ 0.9。在400℃的高速熱退火處理60分鐘後，BITES的p值接近p ≈ 0.95，而TaN作為襯墊層的p值為0.1。此外，這項研究首次展示了Ru/BITES/SiO2結構下降低整體金屬電阻率性能的同時也增強了金屬和二氧化矽界面的附著強度。

As integrated circuit (IC) devices become more efficient, interconnect downscaling needs to be implemented in the back-end-of-line (BEOL) technology. As a result of the downscaling of the vias dimension, the metal resistivity is dominated by surface scattering. Herein, we investigated the functionalization of a self-assembled monolayer (SAM) with ultrathin film thickness (1.3 nm) onto the dielectric surface in reducing interface scattering, thus reducing the overall metal resistivity. Specifically, we designed a SAM of BITES (benzyliminetriethoxysilane), in which the terminal arylimine group could potentially reduced inelastic electron scattering and simultaneous improved metal/SiO2 adhesion. According to the Fuchs−Sondheimer (FS) model, the specularity parameter of the as-deposited Ru/SAMs/SiO2 interface was determined to be p ≈ 0.9. Upon thermal annealing at 400 oC for 60 mins, the p-value of BITES approaches p ≈ 0.95 compared to 0.1 for TaN as a liner. Furthermore, this study demonstrates for the first time simultaneous enhancement in the electrical performance of the Ru/BITES/SiO2 along with the increased in adhesion strength between the metal/SiO2 interface.

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