四族材料近年被熱烈討論及研究，因為其能被有效運用在電子及光電元件上面，且這種材料具有最大的優勢為可以有效方便的整合在矽基板上，這對IC產業之後的發展是非常關鍵的。然而四族材料中Ge是非直接能隙的材料，使得這種材料的發光效率非常低，因此我們必須研究Ge的能帶工程，其中一種方法為鍺錫合金，藉由Sn的加入改變Ge的能帶結構，其直接能隙會下降的比非直接能隙快，理論計算約10%的鍺錫合金能變為直接能隙材料。但是錫在鍺內的固體溶度低於1%且由於錫低熔點的特性在高溫下容易有析出的現象，所以高濃度鍺錫合金通常需要低溫非平衡性的分子束磊晶(MBE)法，但是仍然無法避免產生較多缺陷。
我們試著以快速熱熔再磊晶(RMG)的方法來製作高濃度且單晶的鍺錫合金，並針對此製程作材料上的分析，包括後續高溫退火的限制及其析出的情形。但是由於高濃度鍺錫合金的範圍分佈非常集中，我們藉由特殊結構化的設計，在一般直線型的RMG條狀加上光柵的結構，使其在磊晶的過程中有些許鍺錫合金被保留在光柵結構內，進而大幅提升其高濃度鍺錫合金能發光的區域，最後利用PL量測其發光結果。

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