本研究利用壓縮流體反溶劑法與超臨界流體乾燥法製備奈米銀膜。研究中利用異硬酯酸與硝酸銀進行離子交換合成出前驅物異硬酯酸銀鹽(Silver Isostearate, AgISt)，然後將此前驅鹽溶於有機溶劑中，藉由通入高壓二氧化碳與氫氣形成二氧化碳膨脹溶液以還原前驅物形成奈米銀粒子分散溶液。接著提高二氧化碳壓力使之作為反溶劑，使原本分散在有機溶劑中的奈米銀粒子沉積在基材上形成薄膜，再利用超臨界二氧化碳乾燥以去除殘留於薄膜中之有機溶劑，最後進行鍛燒處理以得完整的導電銀膜。根據研究結果，最適化的條件為：(1)奈米銀懸浮溶液濃度為2.5 mM；(2)反溶劑操作溫度及二氧化碳壓力分別為40 oC及1500 psi，建壓速度為150 psi/min；(3)超臨界二氧化碳乾燥流量為為1 ml/min，乾燥時間為90 min，洩壓時間為4 h；(4)鍛燒升溫速度為2 oC/min、鍛燒溫度為175 oC、時間為30 min，導電薄膜電阻率為5.64×10-6 Ω•cm，厚度為151 nm。利用此方法製備銀膜具有之優勢為：(1)異硬酯酸可當作保護基，避免奈米銀粒子聚集；(2)以高壓二氧化碳作為反溶劑能夠使奈米銀粒子均勻地沉積在基材上；(3)以超臨界二氧化碳進行乾燥可避免薄膜表面張力不均所導致表面結構之破壞；(4)由於鍛燒溫度低且導電度高，未來有機會能利用高分子為基材製作可撓性導電銀膜。

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