在樣品表面鍍上金薄膜，加熱樣品使金聚集成觸媒粒，通入 或 提供矽氣源，在樣品表面上生長出矽奈米線。這方面的研究已有許多相關文獻的研究探討。
本實驗是以浸泡金標準溶液取代濺鍍方式所產生的金薄膜，另外以加熱矽塊材使其蒸發出矽原子取代 或 。矽奈米線的生長受很多因素影響，如不同的金標準溶液浸泡時間、生長溫度、樣品種類、氧氣或氧化物存在與否等。
利用AFM及SEM觀測樣品表面矽奈米線生長的情況，本實驗主要的樣品為n-type Si(100)，綜合實驗的結果有以下三點:
(1)適合生長矽奈米線的條件為加熱800 ℃ 10min使金聚集，600~700 ℃ 30min
生長矽奈米線
(2)浸泡金標準溶液時間≦40s
(3)氧化物存在會影響奈米線的分布

第六章 參考文獻
[1]S. Kodambaka, J. B. Hannon, R. M. Tromp, and F. M. Ross, Nano Lett. 6 (2006)1292, Control of Si nanowire growth by oxygen
[2] J. B. Hanon, S. Kodambaka, F. M. Ross, and R. M.Tromp, Nature 440(2006) 69, The influence of the surface migration of gold on the growth of silicon nanowires
[3]L. Schubert, P. Werner, N. D. Zakharov, G. Gerth, F. M. Kolb, L. Long, and U. G□sele, Appl. Phys. Lett. 84(2004)4968, Silicion nanowhisker grown on <111>Si substrates by molecular-beam epitaxy
[4] C. Wagner, Zeit. Fur Elektrochem, 65(1961)581, Theorie der altering von niederschlagen durch umlosen
[5] I.M Lifschitz, and Slyozov, J. Phys. Chem. Solids 19(1961)35, The kinetics of precipitation from supersaturated solid solutions
[6] U. G□sele, Nature 440(2006)34, How clean is too clean?
[7] L. Schubert, P. Werner,N. D. Zakharov, G. Gerth, F. M. Kolb, L. Long, and U. G□sele, Appl. Phys. Lett. 84(2004)4968, Silicon nanowhiskers grown on <111> Si substrates by molecular-beam epitaxy
[8] J. Kikkawa, Y. Ohno, and S. Takeda, Appl. Phys. Lett. 86(2005)123109,
Growth rate of silicon nanowires
[9]H. Dallaporta, M. Liehr, and J. E. Lewis, Phys. Rev. B 413(1990)5073, Silicon dioxide defects induced by metal impurities
[10] H. Jagannathan, M. Deal, Y. Nishi, J. Woodryff, C. Chidsey, and P. C. Mclntyre, J. Appl. Phys. 100(2006) 024318, Nature of germanium nanowire heteroepitaxy on silicon substrates, Ge/Si(100),Si(110),Si(111)
[11] V. Schmidt, S. Senz, and U. G□sele, Nano Lett. 5(2005)931, Diameter dependent growth direction of epitaxial silicon nanowires
[12] B. Kalache, P. R. I Cabarrocas, and A. F. I Morral, Japa. Jour. Appl. Phys.
45(2006)190, Observation of incubation times in the nucleation of silicon nanowires obtained by the Vapor–Liquid–Solid method
[13] O. G. Shpyrko,R. Streitel,V. S. K. Balagurusamy,A.lexei Y. Grigoriev, M. Deutsch, B. M. Ocko, M.Meron,B. Lin, P. S. Pershan, Science 313(2006)77, Surface crystallization in a liquid AuSi alloy
[14] V. Schmidt, and U. G□sele, Science 316(2007)698, How nanowires grow
[15] S. Kodambaka, J. Tersoff, M. C. Reuter, F. M.Ross, Sciense 316(2007)729, Germanium nanowire growth below the eutectic temperature
[16] J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan , and C. M. Lieber, Nature441(2006) 04796, Ge/Si nanowire heterostructures as highperformance field-effect transistors
[17] D. Whang, S. Jin, Y. Wu, and C. M. Lieber, Nano Lett. 9(2003)1255
Large-scale hierarchical organization of nanowire arrays for integrated
Nanosystems
[18] R. S. Wagner, W. C. Ellis, Appl. Phys. Lett. 4(1964)89, Vapor-Liquid-Solid
mechanism of single crystal growth
[19]陳貴賢、吳季珍,一維奈米材料的研究,物理雙月刊23卷,六
期,609-613(2001年12月)
[20] NT-MDT Solver Instruction Manual
[21]黃英碩，表面物理課程SPM教材