自21世紀以來，科技快速發展，其中半導體技術也急速進步，使高科技產業高速地發展，深深影響人類的生活習慣，諸如 : 看電視變成線上追劇、底片變成雲端相簿、2D遊戲變成沉浸式3D遊戲，更不用說目前急速發展的AI、互聯網、虛擬實境等先進技術，都與半導體發展有著極大的關係。
在現代半導體工藝中，微影製程(lithography) [1]是積體電路中推動工藝中關鍵尺寸 (CD) 縮小的最重要工藝之一，其中 DUV / EUV 和電子束等能源變得不可或缺。原則上，微影製程(lithography)旨在通過光罩、光阻劑和曝光能源的系統組合，在晶圓的特定區域（幾厘米）上轉移一系列範圍（幾十毫米）內的微小光罩圖案（幾納米）。在最先進的CMOS製成技術中，深紫外光 (DUV) 是其光刻系統中核心，因此在投影平面上獲得 DUV 曝光信息的反饋至關重要。傳統傳感器，如電荷耦合器件(Charge-coupled Device, CCD) 和主動式像素感測器(Active Pixel Sensor, APS)，利用位能井和/或浮動電位來收集由光電效應引起的光電子，通常需要有專門的製程技術實現。這篇論文，提出了一種 DUV 耦合浮動閘極光感測元件，具有 CMOS 製程的兼容性、無須外加電源和晶圓上曝光強度分布收集的優點。
除此之外，本論文也提出一種能提高元件光反應靈敏度的方法，利用一維連續光柵抗反射奈米結構，降低DUV反射率，進而達到提高光電反應量子效應的結果，以此進一步提高元件靈敏度，且此概念能利用在諸多會使用的光電反應的系統中。

Since the 21st century, the rapid development of technology, including the rapid progress of semiconductor technology, has led to the rapid development of high-tech industries, which has deeply affected the living habits of human beings, such as: watching TV has become an online drama, negatives have become cloud albums, and 2D games have become immersive 3D games, not to mention the rapidly developing advanced technologies such as AI, the internet, and virtual reality, have a great relationship with the development of semiconductors.
In modern semiconductor processes, lithography is one of the most important procedures in integrated circuit to push the shrinking of critical dimensions (CD) in CMOS processes, in which energy sources such as DUV/ EUV and eBeam become indispensable. In principle, lithography[1] technology is designed to transfer a series of tiny masking patterns (few nm) within a wide range (tens mm) of a specific area (few cm) on wafers by a systematic combination of photomask, photoresist, and light source for exposure. In state-of-art nanometer CMOS technologies, Deep Ultraviolet light (DUV) is in the core of its lithography systems, so obtaining feedback of the DUV exposure information on the projected plane is critical. Conventional sensors, i.e., Charge-coupled devices (CCD) and Active Pixel Sensor (APS), utilizing potential wells and/or floating nodes for collecting photo-electrons induced by photoelectric effect, are normally realized by specialized processes. In this paper, we proposed a DUV detector, which has advantages of CMOS compatibility, battery-less and on-wafer DUV information collection.
In addition, this paper also proposes a method that can improve the photoreaction sensitivity of the detector, using one-dimensional continuous grating anti-reflection nanostructures to reduce DUV reflectivity, and then achieve the result of improving the quantum efficiency, so as to increase the device sensitivity. By reducing reflectivity of DUV can increase the efficiency of the conversion between electron and photon light, in turn, improve the device sensitivity. This concept can be exploited in many systems where photoelectric effect is used.

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