本文致力研究III-V族半導體利用快速熱熔磊晶法(RMG)整合於矽基板上，因為銻化鎵熔點在712 ℃，所以可以利用RMG的方式製備。由於是雙原子化合物，且富有極性以及反相位(antiphase domain)，所以本文將深入探討III-V整合在矽基板上的異質整合，如銻化鎵與矽的晶格不匹配達13%，銻化鎵的熱膨脹係數又高達矽的3倍，且銻化鎵須遵守規律的排列ABABA，倘若不規律排列則會形成antiphase domain。
然而一般的三五族蒸鍍方法不是利用分子束磊晶(MBE)就是用有機金屬化學氣相沉積法(MOCVD)製備，但本實驗將用電子束及熱蒸鍍一起共蒸鍍銻鎵薄膜，利用鍍率去控制膜厚、濃度以及粗糙度，雖然製備出來的品質不如MBE以及MOCVD，但仍可藉由RMG的方式做修復。
接著根據濃度差異、結構變化對磊晶的成果以及RMG參數等等，進行實驗優化，三者皆環繞在晶相及磊晶的方法上，主要判別晶相以及發光效率，運用光致發光系統(PL)、穿透式顯微鏡、EDS、SAD等等量測工具。

In this thesis, structures made of III-V semiconductor Gallium Antimonide (GaSb) on silicon substrate by Rapid-Melt-Growth (RMG) method are investigated. Due to the relatively low melting point of GaSb (712 ℃) and small bandgap, it is an ideal material to be applied for Si photonics as a light source and can be fabricated through the RMG process. However, III-V compounds are different from group IV, hence there are still many issues required to be overcome, such as such as lattice mismatch (13%), thermal expansion mismatch between GaSb and Si.
In general, growing III-V semiconductor typically relies on either Molecular Beam Epitaxy (MBE) or Metal-organic Chemical Vapor Deposition (MOCVD), which requires expensive tools and critical processes, especially for heterogeneous epitaxial growth of III-V on Si. In this study, Ga (7N) and Sb (6N) are co-evaporated by the E-gun and thermal evaporator to be the precursor for the following annealing process. Despite the quality of the precursor film can’t compare with the material directly made by MBE or MOCVD, this study is to demonstrate a monocrystalline, high-quality GaSb structure implemented via the RMG method.
To get the best material quality, we study several key process conditions of RMG, including the ratio of Ga and Sb in precursor, crucible material, annealing temperature and annealing time. Then the material is characterized by Photoluminescence (PL), Transmission Electron Microscopy (TEM), Energy-dispersive X-ray spectroscopy (EDS), Selective Area Diffraction pattern (SAD) and so on. Finally, we find the best process condition to make GaSb on Si substrate.

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