以氮化鎵為材料的發光二極體在近年來有著蓬勃的發展，而這些元件的活性區材料是氮化銦鎵。氮化物元件在許多地方的應用上有著極大的潛力，像是光學儲存裝置，全彩顯示器等。 但是氮化物元件仍然有許多待解的問題，像是錯位，多量子井系統裡的行為，溫度對整體的影響等等…許多已發表的文獻呈現元件特殊的特性，並且試著去改善以氮化鎵為材料的發光二極體性能。但是他們大多著重在小範圍的現象或是單一變數變化對元件行為的影響。我們將藉由模擬看到元件表現的整體性以及綜合性。
APSYS是一套主要以二維，有限要素分析以及模組化來模擬半導體的軟體。它包含許多物理的模型而且提供非常有彈性的模組和模擬環境在做現代的半導體元件模擬上。我們藉由這套軟體去檢視任一變數對元件的影響並且做出由裡而外的最佳化設計。將模擬的結果綜合後，我們將得到元件特性的資料以及如何改善它的表現。此外，我們發展出藉由改變極化效應和Shockley-Read-Hall lifetime去使模擬可以近似真實的情況。
最後，我們結合溫度效應並應用在我們的最佳化設計上，去觀察溫度對元件行為的影響。藉由這一連串的模擬流程，我們對元件特性有更深入的了解，並知道最重要的關鍵點。此外，我們也驗證了模擬應用在實際實驗的可行性。藉由模擬，我們可預先得知其可能的特型與效應。因此，可以省下大量時間以及提供元件設計一個正確的方向。從本研究中，我們相信以氮化鎵為材料的發光二極體，在模擬的幫助下，發展將會更為迅速。

GaN-based Light - emitting diodes, whose active regions are made of InGaN, have vigorous development in recent years. Nitride devices have great potential for various applications, such as optical data storage and full-color displays. But there are many issues to be solved, like the dislocation, behaviors of multi-quantum wells system, and the effects of temperature. References have shown the characteristics of the nitride devices and the possibilities to improve the performances of GaN-based LED. But only a few phenomena or the effects of single parameter have been discussed. A better understanding of the properties of nitride devices could be gained by simulation.
APSYS is two-dimensional (2D) software and it uses finite element analysis and modeling software program for semiconductor devices. Its advanced physical models provide a flexible modeling and a simulated environment for modern semiconductor devices. APSYS examines the effects of each parameter and helps the devices to reach their optimization. The results of APSYS simulation provide the information of device’s characteristics and suggest how to improve its performance. By changing polarization and Shockley-Read-Hall lifetime, we develop a method to simulate the real condition.
Finally, the temperature effect to the optimal design is considered. With a series of simulation processes, we get familiar with GaN-based LED and know the key point. We also test and verify that the APSYS simulation is feasible for application. We can predict the possible characteristics and effects. Therefore, a more precise direction of the device design helps to save lots of time. With the help of the APSYS simulation, the rapid development of GaN-based LED could be expected.

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