本實驗主要有三個部分，第一部分為確保矽酸鈉溶液在使用SK1BH陽離子交換樹酯後能將溶液中的Na離子去除，此階段以XPS縱深分析結果佐證，而後找出能使退火後少數載子壽命提升效果最佳的溶液配置以及最佳的退火溫度及時間。
第二部分則是將沉積過氧化矽的矽基板以PECVD沉積不同厚度之氮化矽作為抗反射層，並觀察厚度與其反射率之影響。而我們可以發現反射率最低點約落650nm，平均之反射率約2.66%，最低反射率約1.15%。
最後在電池元件的部分，以SEM量測背部電極的BSF的厚度，而I-V量測結果顯示填充因子FF達到77.2%，轉換效率達到16.77%。

There are three main parts in this study:
In the first part, we ensured that the Na+ ions in the sodium silicate solution could be removed after the solution was filtered through the SK1BH cation exchange resin. The XPS measurement confirmed the removal of the Na ions. Then we found the best solution concentration and annealing temperature for increasing minority carrier lifetime of the multicrystalline silicon wafer.
In the second part, the chemically wet deposition technique was used to deposit a layer of silicon oxide. Using the chemically wet deposited silicon oxide as a part of antireflection layer. The thickness of silicon nitride was optimized to give an reflectance as low as possible. It was found that the optimal two-layer antireflection layer corresponds to an average reflection of 2.66% with a minimum of 1.15% at 650nm.
In the third part , we used the stacked antireflection layer at the front in fabricating multicrystalline silicon solar cells. The I-V measurement showed that FF reached 77.2% and the conversion efficiency was 16.77%.

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