本論文介紹利用高密度電漿化學氣相沉積系統製備氫化非晶矽鍺(a-SiGe)薄膜太陽能電池。由於氫化非晶矽薄膜能隙較高(1.8~1.9eV)，氫化非晶矽薄膜太陽能電池有高開路電壓的優點，但相對在太陽光譜中長波長的部分(750nm以上)無法有效吸收。為了克服上述氫化非晶矽薄膜太陽能電池之缺點，我們開發非晶矽鍺合金薄膜a-SiGe (1.4~1.6eV)，使其可吸收太陽光譜中不同波段的，有效的增強光伏特元件吸收寬頻太陽光能的利用率，並且可以發展多接面堆疊型矽基薄膜太陽能電池。本文中也展示利用乙矽烷電漿技術製作的非晶矽及非晶矽鍺薄膜太陽能電池。
本實驗室目前已經開發單接面氫化非晶矽薄膜太陽能電池轉換效率達9.2%，導入矽鍺薄膜之單接面太陽能電池轉換效率達5.26%，且從量子效率量測結果可看出，單接面矽鍺薄膜太陽能電池在650~850nm所擁有的量子轉換效率有顯著的提升，並利用負偏壓量子效率量測系統及DLCP量測及比較缺陷密度。而堆疊型太陽能電池的部分，我們目前a-Si/a-SiGe雙層堆疊型薄膜太陽能電池開路電壓可達到1.56V，其轉換效率可達8.38%。未來研究的方向將致力於改善乙矽烷製作的非晶矽鍺太陽能電池，進而整合成高效率的雙接面與三接面太陽能電池。

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