研究生: |
王聖禎 Wang,Sheng-Chen |
---|---|
論文名稱: |
熱處理對鍍著氮氧化鋯薄膜產生相變化及相分離之研究 Post-annealing Induced Phase Transformation and Phase Separation of Zr(O,N) Thin Films |
指導教授: |
喻冀平
Yu,Ge-Ping 黃嘉宏 Huang,Jia-Hong |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
原子科學院 - 工程與系統科學系 Department of Engineering and System Science |
論文出版年: | 2008 |
畢業學年度: | 97 |
語文別: | 英文 |
論文頁數: | 80 |
中文關鍵詞: | 熱處理 、相變化 、相分離 |
外文關鍵詞: | Post-annealing, phase transformation, phase separation |
相關次數: | 點閱:1 下載:0 |
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本實驗利用中空陰極電弧放電法於P型(100)矽晶片上,成功製備單斜晶二氧化鋯奈米晶粒薄膜。實驗中藉氮流量為的單一變數以控制鍍膜過程中的氧/氮流量比。並在鍍膜後,做900℃高溫熱處理一小時候。本研究主要目的在探討二氧化鋯與立方晶之氮氧化鋯(Zr2ON2)薄膜於熱處理前後的相變化與機械性質。藉由X光光電子儀(XPS)可得到鋯、氧、氮的成分。由X光繞射譜圖(XRD)觀察發現,在純鍍膜後單斜晶二氧化鋯為主要結構;在經過熱處理後,純鍍膜過程中氮含量高於20%的試片,其結構都轉為立方晶之氮氧化鋯(Zr2ON2)。根據熱處理後薄膜相變化可以分成三區:ZoneⅠ是以立方晶之氮氧化鋯為主(O/N 流量比為0.6及0.8),ZoneⅡ是以單斜晶二氧化鋯與立方晶之氮氧化鋯混合區(O/N 流量比為2.0),ZoneⅢ是以單斜晶二氧化鋯為主(O/N 流量比為3.0)。ZoneⅡ在熱處理前的試片具有最高的堆疊密度跟硬度。在熱處理後有明顯應力釋放可能來自於缺陷減少的原故。針對氧氮流量比為2.0之試片做不同時間熱處理,在X光繞射譜圖(XRD)與掠角X光繞射譜圖(GIXRD)觀察到不同的相轉換。依相變化將薄膜分成試片表層與試片內層部分:試片表層相轉換為立方晶之氮氧化鋯與殘氧相轉變成單斜晶二氧化鋯,試片內層部分為單斜晶二氧化鋯與氮缺陷相轉變成立方晶二氧化鋯。
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