研究生: |
呂奕賢 Yi-Hsien Lu |
---|---|
論文名稱: |
利用掃描探針顯微術分析氧化鉍鐵薄膜的奈米尺度特性 Nanoscale Characterization of Bismuth Ferrite Films by Scanning Probe Microscopy |
指導教授: |
林鶴南
Heh-Nan Lin |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
工學院 - 材料科學工程學系 Materials Science and Engineering |
論文出版年: | 2005 |
畢業學年度: | 93 |
語文別: | 英文 |
論文頁數: | 60 |
中文關鍵詞: | 磁電材料 、氧化鉍鐵 、掃瞄探針顯微術 、壓電力顯微術 、磁力顯微術 |
外文關鍵詞: | multiferroics, bismuth ferrite, scanning probe microscopy, piezoresponse force microscopy, magnetic force microscopy |
相關次數: | 點閱:1 下載:0 |
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磁電材料 (Multiferroics) 是一種同時具有鐵電性和磁特性的特殊材料,其中氧化鉍鐵 (BFO) 又可在室溫下具有磁電性質。本論文主旨在利用掃描探針顯微術 (SPM) 觀察磁電材料氧化鉍鐵的奈米尺度特性;其中壓電力顯微術 (PFM) 將用來研究氧化鉍鐵微觀鐵電特性,包括鐵電疇分布、局部遲滯現象、局部寫入鐵電疇等,均會在本實驗中討論。接著將結合壓電力顯微術以及磁力顯微術 (MFM) 來探討氧化鉍鐵薄膜在施加電場後的磁性反應。
本實驗所使用的BFO薄膜是利用磁控濺鍍的方法於攝氏350度。在Pt/Ti/SiO2/Si當做基板時,BFO薄膜有很好的鐵電特性,遲滯現象明顯的被觀察到,而壓電係數最高可達50 pm/V;但在使用LNO/Pt/Ti/SiO2/Si當基板時,卻顯示出微弱和不穩定的壓電訊號。
利用PFM直接寫入鐵電疇,大範圍和單一晶粒的寫入反轉均被成功的執行;不同電壓施加在特定區域使鐵電疇能顯示出不同的極化方向,而將大電壓施加在單一晶粒上亦能反轉單一鐵電疇的極化方向。至於BFO薄膜在施加電場過後的磁性反應,則因靜電力的干擾,而無法成功觀察到。
Bismuth ferrite (BiFeO3, BFO), a multiferroic material possessing both ferroelectric and several magnetic orders at room temperature, is studied by scanning probe microscopy (SPM) in this dissertation. Nanoscale ferroelectric properties including domain distribution, local hysteresis, and local poling are explored by piezoresponse force microscopy (PFM), one of the analyzing tools based on SPM. The magnetic response after an electrical poling is also studied by combining PFM and magnetic force microscopy (MFM), an analyzing tool to investigate nanoscale magnetic domains based on SPM.
BFO thin films were produced by magnetron sputtering at 350 □C. With Pt/Ti/SiO2/Si substrates, BFO films showed good ferroelectricity with obvious hysteresis behavior and piezoelectric coefficients as high as 50 pm/V. However, with LNO/Pt/Ti/SiO2/Si substrate, unstable piezoresponse signal was shown.
Direct domain writing using PFM on BFO films was successfully executed over large regions and on single grains. Different voltages were pre-biased at certain areas to show different polarities. A large voltage pulse was also added on a single domain to show reversed polarization. However, the magnetic response after an electrical poling was not observed due to the interference of an electrostatic force.
1. O. Auciello, J. F. Scott, and R. Ramesh, Phys. Today 51, 22 (1998).
2. J. Scott, Ferroelectric Memories, first ed., Advanced Microelectronics, Springer (2000)
3. M. N. Baibich, J. M. Broto, A. Fert, F. Nguyen Van Dau, F. Petroff, P. Etienne, G. Creuzet, A. Friederich, and J. Chazelas, Phys. Rev. Lett. 61, 2472 (1988)
4. S. Jin, T. H. Tiefel, M. McCormack, R. A. Fastnacht, R. Ramesh, and L. H. Chen, Science 264, 413 (1994)
5. M. Johnson, IEEE Spectrum 31, May, 47 (1994)
6. L. J. Sham, J. Magn. Magn. Mater. 200, 219 (1999)
7. N. Hur, S. Park, P. A. Sharma, J. S. Ahn, S. Guha, and S-W Cheong, Nature 429, 392 (2004)
8. G. A. Smolenskii and I. E. Chupis, Sov. Phys. Usp. 25, 475 (1982)
9. I. Sosnowska, T. P. Neumaier, and E. J. Steichele, J. Phys. C 15, 4835 (1982)
10. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 299, 1719 (2003)
11. G. Binnig and H. Rohrer, Rev. Mod. Phys. 71, S324 (1999)
12. G. Binnig, C. F. Quate, and Ch. Gerber, Phys. Rev. Lett. 56, 930 (1986)
13. M. Alexe and A. Gruverman, Nanoscale Characterisation of Ferroelectric Materials, Scanning Probe Microscopy Approach, Springer (2004)
14. A. Gruverman, O. Auciello, and H. Tokumoto, Annu. Rev. Mater. Sci. 28, 101 (1998)
15. R. B. Proksch, S. Foss, and E. D. Dahlberg, IEEE Trans. Magn. 30, 4467 (1994)
16. D. Damjanovic, Rep. Prog. Phys. 61, 1267 (1998)
17. C. Hammond, the Basics of Crystallography and Diffraction, second ed., Oxford University Press (2004)
18. G. E. Pike, W. L. Warren, D, Dimos, B. A. Tuttle, R. Ramesh, J. Lee, V. G. Keramidas, and J. T. Eans, Appl. Phys. Lett. 66, 484 (1995)
19. J. Lee, C. H. Choi, B. H. Park, T. W. Noh, and J. K. Lee, Appl. Phys. Lett. 72, 3380 (1998)
20. Tianquan Lu and Wenwu Cao, Microelectronic Eng. 66, 814 (2003)
21. A. L. Kholkin, E. L. Colla, A. L. Tagantsev, D. V. Taylor, and N. Setter, Appl. Phys. Lett. 68, 2577 (1996)
22. M. Alexe, C. Haenagea, D. Hesse, and U. Gosele, Appl. Phys. Lett. 79, 242 (2001)
23. Y. Saya, S. Watanabe, M. Kawai, H. Yamada, and K. Matsushige, Jpn. J. Appl. Phys., 39, 3799 (2000)
24. C. Kittle, Introduction to Solid State Physics, seventh ed., John Wiley & Sons INC, (1996)
25. N. A. Hill, J. Phys. Chem. B 104, 6694 (2000)
26. E. Ascher, H. Rieder, H. Schmid, and H. Stossel, J. Appl. Phys. 37, 1404 (1966)
27. A. M. Katomtseva, A. K. Zvezdin, Yu. F. Popov, A. P. Pyatakov, and G. P. Vorobev, JETP Lett. 79, 705 (2004)
28. C. Ederer and N. A. Spaldin, Phys. Rev. B 71, 060401 (2005)
29. J. R. Teague, R. Gerson, and W. J. James, Solid State Communications 8, 1073 (1970)
30. M. M. Kumar, V. R. Palker, K. Srinivas, and S. V. Suryanarayana, Appl. Phys. Lett. 76, 2764 (2000)
31. V. R. Palker, J. John, and R. Pinto, Appl. Phys. Lett. 80, 1628 (2002)
32. J. S. Kim, C. H. Yang, S. G. Yoon, W. Y. Choi, and H. G. Kim, Appl. Surf. Science 140, 150 (1999)
33. M. M. Kumar, A. Srinivas, and S. V. Suryanarayana, J. Appl. Phys. 87, 855 (2000)
34. K. Ueda, H. Tabata, and T. Kawai, Appl. Phys. Lett. 75, 555 (1999)
35. T. Kanai, S. I. Ohkoshi, A. Nakajima, T. Watanabe, and K. Hashimoto, Adv. Mater. 13, 487 (2001)
36. K. Y. Yun, M. Noda, and M. Okuyama, Appl. Phys. Lett. 83, 3981 (2003)
37. K. Y. Yun, M. Noda, M. Okuyama, H. Saeki, H. Tabata, and K. J. Saito, J. Appl. Phys. 96, 3399 (2004)
38. J. Wang, H. Zheng, Z. Ma, S. Prasertchoung, M. Wuttig, R. Droopad, J. Yu, K. Eisenbeiser and R. Ramesh, Appl. Phys. Lett. 85, 2574 (2004)
39. K. Y. Yun, D. Ricinschi, T. Kanashima, M. Noda, and M. Okuyama, Jpn. J. Appl. Phys. 43, L647 (2004)
40. M. Fiebig, J. Phys. D 38, R123 (2005)
41. M. Fiebig, Th. Lottermoser, D. Fröhlich, A. V. Goltsev, and R. V. Pisarev, Nature 419, 818 (2002)
42. T. Kimura, T. Goto, H. Shintani, K. Ishizaka, T. Arima, and Y. Tokura, Nature 426, 55 (2003)
43. G. Binnig and H. Rohrer, Rev. Mod. Phys. 59, 615 (1987)
44. F. Saurenbach and B. D. Terris, Appl. Phys. Lett. 56, 1703 (1990)
45. P. Guthner and K. Dransfeld, Appl. Phys. Lett. 61, 1137 (1992)
46. A. Gruverman, O. Auciello, and H. Tokumoto, Appl. Phys. Lett. 69, 3191 (1996)
47. A. Gruverman, O. Auciello, and H. Tokumoto, Nanotechnology, 8, A38 (1997)
48. A. Gruverman, H. Tokumoto, A. S. Prakash, S. Aggarwal, B. Yang, M.Wuttig, R. Ramesh, O. Auciello, and T. Venkatesan, Appl. Phys. Lett. 71, 3492 (1997)
49. L. M. Eng, H-J. Guntherodt, G. A. Schneider, U. Kopke, and S. Munoz, Appl. Phys. Lett. 74, 233 (1999)
50. L. M. Eng, H-J. Guntherodt, G. Rosenman, A. Skliar, M. Oron, M. Katz, and D. Eger, J. Appl. Phys. 83, 5973 (1998)
51. A. Roelofs, U. Boettger, R. Waser, F. Schlaphof, S. Trogisch, and L. M. Eng, Appl. Phys. Lett. 77, 3444 (2000)
52. M. Alexe, C. Harnagea, D. Hesse, and U. Gosele, Appl. Phys. Lett. 75, 1793 (1999)
53. W. Ma, C. Harnagea, and U. Gosele, Appl. Phys. Lett. 83, 3770 (2003)
54. W. Ma and D. Hesse, Appl. Phys. Lett. 84, 2871 (2004)
55. M-H. Zhao, Z-L. Wang, S. X. Mao, Nono Lett. 4, 587 (2004)
56. C. Halperin, S. Mutchnik, A. Agronin, M. Molotskii, P. Urenski, and G. Rosenman, Nano Lett. 4, 1253 (2004)
57. J. A. Christman, Piezoelectric Measurements Using an Atomic Force Microscopy, Raleigh (1999)
58. S. Hong, J. Woo, H. Shin, J. U. Jeon, Y. E. Pak, E. L. Colla, N. Setter, E. Kim, K. No, J. Appl. Phys. 89, 1377 (2001)
59. J. A. Christman, R. R. Woolcott, Jr., A. I. Kingon, and R. J. Nemanich, Appl. Phys. Lett. 73, 3851 (1998)
60. S. V. Kalinin, D. A. Bonnell, Phys. Rev. B 65, 125408 (2002)
61. BiFeO3 samples were processed by Yi-Hsein Lee in Prof. Wu’s lab
62. Y. H. Lee, J. M. Wu, Y. C. Chen, Y. H. Lu, and H. N. Lin, J. Phys. Chem. B, in press.
63. J. Li, J. Wang, M. Wuttig, R. Ramesh, N. Wang, B. Ruette, P. A. Pyatakov, K. A. Zvezdin, and D. Viehland, Appl. Phys. Lett. 84, 5261 (2004)
64. H.-N. Lin, S.-H. Chen, S.-T. Ho, P.-R. Chen, and I.-N. Lin, J. Vac. Sci. Techol. B 21, 916 (2003)
65. Y. H. Lee et al, Appl. Phys. Lett, in press