本研究透過TSMC所提供之0.18um 1P6M之CMOS平台，來製作一單晶整合之環境感測晶片，此晶片含有濕度、溫度、氣壓三種不同之感測單元，本研究以濕度感測器為出發點，從結構下手進行反應速率以及感測靈敏度的改善進而提出兩種設計，並且透過CMOS平台的優點與其他感測器進行整合，此整合製程的最大宗旨在於能夠設計出一套能夠同時完成三種元件的設計流程，並且各元件的製作過程中，不會因為製程上的衝突而導致元件之間互相干擾，值得注意的是，由於溫度感測元件的體積較小以及設計較為直觀，將會利用CMOS製程中的多層金屬堆疊，直接進行垂直整合於其中一種濕度計的元件內。
元件經過設計好之製程流程後，對所有元件進行訊號上的分開量測，本次所提出的各種設計皆能有平均之上的訊號表現，證實了利用CMOS平台來達成單晶整合的可行性。

This research presents a monolithically integrated environment sensing hub utilizing the TSMC CMOS platform. This study first focuses on the structure design of humidity sensors, with the intention of improving the sensors’ response time and sensitivity, then in order to fully utilize the CMOS platform, a pressure sensor and a temperature detector are integrated monolithically on the same chip, the core concept of this research is to fabricate all four sensors at once, without the fabrication process inteferring each other.
Experimental measurements will be operated seperately once all the fabrication processes are completed, experiment results show the performance of each device are all above average, proving the feasibility of monolithic integration upon the CMOS platform.

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