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研究生： 陳蓓俐
論文名稱： 功率管理IC保護電路的設計
Protection Circuit Design of Power Management IC
指導教授： 龔正
Jeng Gong
口試委員:
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 電子工程研究所
Institute of Electronics Engineering
論文出版年： 2005
畢業學年度： 93
語文別： 中文
論文頁數： 82
中文關鍵詞： 保護電路 、功率管理
相關次數： 點閱：1  下載：0 
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    • 摘要
    　　為達成高電流與高速度的功率管理與控制‚多相位轉換技術陸續被發表出來‚每一個相位最大電流高達25A‚切換頻率從0KHz-1MHz‚這項技術對CPU的控制來說是一項重大的突破‚一般最需要面臨挑戰的就是價格與溫度過高的問題‚所以隨著製程發展的進步‚日常生活中攜帶式相關電子產品數量大增‚為達到良好的產品品質與節省電力‚電源管理的觀念是一項重要的課題‚尤其是內部不可或缺的保護電路更是值得我們做深入的研究與探討‚論文中主要針對輸入電壓過低保護電路、過溫保護電路、過電流保護電路三個部分來討論。
    　　近年來功率IC產業發展迅速‚國內外廠商中的功率產業更是整個產品銷售量成長的主要來源‚功率管理與控制晶片一般可分成控制模組、驅動模組與保護模組三大項目‚不同廠商設計出來的晶片組成架構略有不同‚因此一個功率管理與控制晶片之中可能包含這三項或是只有其中的幾項所組成‚而此篇論文主要就是針對保護模組來做設計。
    　　論文中所有的電路皆採用TSMC提供的0.35um 2P4M Mixed Signal製程參數來做模擬與佈局‚晶片名稱為高速與高電流功率管理與控制中的電壓過低與過溫感應保護電路‚並利用18SB來封裝‚整個晶片的尺寸為0.401*0.67mm2‚功率損失為1.57mW‚最大頻率為1MHz‚測試結果為電路功能正常工作。

    ABSTRACT

    　　In order to achieve high current capability and high speed power management and control, multi-phase power conversion advantages are developed. The phase current is up to 25A and the phase switching frequencies ranges from 250KHz to 1MHz. The development of this technique for CPU control is a great breakthrough. However, the challenges of the technique are the high price and the high temperature. As the advances of fabrications, more portable electronic products are used in our daily lifes. The concept of power management is an important assignment for achieving the best quality of products and saving power, and the indispensable protected circuit is worthy to be investigated especially. The topics of this research are aimed at input under voltage protection circuit, over-temperature protection circuit, and over-current protection circuit.

    　　The power IC industry is expanding quickly in recent years, and the power industry is the major contribution to growths of domestic and overseas market. The power management and control chips can be separated into three items, which are control model, driver model, and protection model. The structure of chips is not alike from different companies, so the power management and control chips may be composed of these three or several previous items. This paper is focused on the design of protection model.

    　　The simulations and layouts of this chip named “the input UV circuit and temperature sensor for high-speed current power management controller” are fabricated with 0.35 μm 2P4M Mixed Signal technology provided by TSMC, and the chip is packaged by 18SB technology. This chip whose size is 0.401*0.67 mm2 has 1.57 mW power loss and maximum 1 MHz frequency, and it can work normally verified from practical test.

    目錄 中文摘要..................................................................................................Ⅰ 英文摘要..................................................................................................Ⅲ 致謝..........................................................................................................Ⅳ 目錄..........................................................................................................Ⅴ 表目錄......................................................................................................Ⅷ 圖目錄......................................................................................................Ⅸ 第一章　緒論............................................................................................1 1-1　研究動機與目的.....................................................................1 1-2　論文大綱.................................................................................2 第二章　功率管理IC概念分析...............................................................3 2-1　前言.........................................................................................3 2-2　功率放大級（Power Stage）原理.............................................5 2-3　多相位功率轉換原理.............................................................8 2-4　電壓控制迴路.......................................................................11 2-5　保護電路的特色與機制.......................................................16 第三章　功率管理IC內保護電路設計原理.........................................19 3-1　輸入電壓過低保護電路.......................................................19 3-1-1　定電壓電流源.............................................................20 3-1-2　比較器.........................................................................24 3-2　過溫保護電路.......................................................................25 3-2-1　單位增益緩衝器.........................................................26 3-3　過電流保護電路...................................................................28 3-3-1　電流感應原理.............................................................29 3-3-2　non-overlapping電路...................................................35 3-3-3　高速比較器.................................................................36 3-3-4　電流限制電路.............................................................38 3-3-5　驅動電路.....................................................................39 第四章　功率管理IC內保護電路分析與模擬.....................................43 4-1　輸入電壓過低保護電路分析與模擬.................................43 4-2　過溫保護電路分析與模擬.................................................47 4-3　整合保護電路分析與模擬.................................................53 4-4　感應電流分析與模擬.........................................................57 4-4-1　non-overlapping電路分析與模擬.............................59 4-4-2　高速比較器分析與模擬...........................................62 4-4-3　驅動電路分析與模擬...............................................66 4-5　過電流保護電路分析與模擬...........................................68 4-6　晶片製作與量測結果.......................................................71 第五章　結論與未來研究方向..............................................................78 5-1　結論.....................................................................................78 5-2　未來研究方向.....................................................................79 參考文獻..................................................................................................80 表目錄 表2-1　電壓識別碼................................................................................13 表4-1　預計規格與實測結果對照表....................................................75 表4-2　八顆封裝完成的晶片實測結果................................................75 表4-3　intersil IC規格表........................................................................76 表4-4　論文中的IC變動量...................................................................76 表4-5　國外IC與論文中設計的IC比較..............................................77 圖目錄 圖2-1　各家廠商功率市場銷售量的比較 ............................................4 圖2-2　功率半導體成長趨勢 ................................................................5 圖2-3　高電流與高速度的功率管理與控制晶片組成模組..................6 圖2-4 三相轉換器的PWM與電感電流波形........................................9 圖2-5 電壓控制迴路基本架構............................................................12 圖2-6 電壓調節基本原理....................................................................14 圖2-7 類比誤差放大器與補償............................................................15 圖2-8 數位PID補償器.........................................................................16 圖2-9 過載電流架構............................................................................18 圖3-1　輸入電壓過低保護電路基本架構............................................20 圖3-2　正溫度係數電路........................................................................21 圖3-3　參考電壓與溫度的曲線............................................................23 圖3-4　零溫度係數帶差參考電路........................................................24 圖3-5　二階比較器................................................................................25 圖3-6　過溫保護電路基本架構............................................................26 圖3-7　TH與TL偏壓值的設計理念.....................................................27 圖3-8　單位增益緩衝器........................................................................28 圖3-9　過電流保護基本架構................................................................29 圖3-10　串聯感應電阻..........................................................................30 圖3-11　MOSFET　RDS　　電流感應.....................................................31 圖3-12　利用電感器上的壓降來求得感應電流..................................32 圖3-13　電感電壓測量電感電流方式..................................................32 圖3-14　感應電晶體..............................................................................33 圖3-15　電流轉換理論..........................................................................34 圖3-16　non-overlapping概念...............................................................35 圖3-17　non-overlapping時脈產生電路...............................................36 圖3-18　電壓比較器組成架構..............................................................36 圖3-19　高速比較器..............................................................................38 圖3-20　電流限制電路基本架構..........................................................39 圖3-21　一級反相器驅動負載電容......................................................40 圖3-22　N級反相器串聯驅動負載電容...............................................41 圖4-1　輸入電壓過低保護電路分析....................................................43 圖4-2　定電壓源電路............................................................................45 圖4-3　參考電壓與溫度模擬結果........................................................46 圖4-4　定電流源電路............................................................................47 圖4-5　PNP電晶體VBE與溫度模擬.....................................................48 圖4-6　過溫保護電路-不同Corner模擬結果.......................................50 圖4-7　改變TH與TL電壓值觀察輸出變化........................................50 圖4-8　TH與TL電壓電路.....................................................................51 圖4-9 過溫保護電路圖..........................................................................52 圖4-10　整合保護電路基本架構..........................................................54 圖4-11　整合保護電路OR閘輸出結果................................................55 圖4-12　整合保護電路中的輸入電壓過低模擬結果（vcc高到低）…55 圖4-13　整合保護電路中的輸入電壓過低模擬結果（vcc低到高）....56 圖4-14　整合保護電路中的過溫保護模擬結果..................................56 圖4-15　整合保護電路不同Corner模擬結果......................................57 圖4-16　感應電流電路圖......................................................................58 圖4-17　感應電流模擬結果..................................................................59 圖4-18　non-overlapping電路圖...........................................................60 圖4-19　non-overlapping模擬結果.......................................................61 圖4-20　高速比較器電路圖..................................................................63 圖4-21　模擬輸出 、 值...................................................................64 圖4-22　傳播延遲時間..........................................................................64 圖4-23　上升與下降時間......................................................................65 圖4-24　前置放大器輸出電流變化......................................................65 圖4-25　驅動電路模擬結果..................................................................66 圖4-26　驅動電路圖..............................................................................67 圖4-27　過電流保護電路......................................................................68 圖4-28　過電流保護電路模擬結果......................................................69 圖4-29　不同製程Corner的過電流保護模擬結果..............................70圖4-30　KEITHLEY儀器......................................................................72 圖4-31　過溫保護電路測試環境..........................................................72 圖4-32　佈局平面圖..............................................................................73 圖4-33　輸入電壓過低保護電路測試結果..........................................74 圖4-34　過溫保護電路測試結果..........................................................74

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